Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Molecular Dynamics study of Aluminum growth using Aluminum Cluster Deposition

알루미늄 덩어리를 사용한 알루미늄 성장에 관한 분자동력학 연구

  • J.W. Kang (Semiconductor Process and Device Laboratory, Dept. of Electronic Engineering, Chung-Ang University) ;
  • K.R. Byun (Semiconductor Process and Device Laboratory, Dept. of Electronic Engineering, Chung-Ang University) ;
  • W.H. Mun (Semiconductor Process and Device Laboratory, Dept. of Electronic Engineering, Chung-Ang University) ;
  • E.S. Kang (Semiconductor Process and Device Laboratory, Dept. of Electronic Engineering, Chung-Ang University) ;
  • H.J. Hwang (Semiconductor Process and Device Laboratory, Dept. of Electronic Engineering, Chung-Ang University)
  • Published : 2000.06.01
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Abstract

In this work, we investigated A1 cluster deposition on Al (100) surface using molecular dynamics simulation. A result of simulations showed that large cluster with low energy was proper for good surfaced-films without craters at the low temperatures. We investigated the maximum substrate temperature and the time taken for substrate temperature to reach its maximum as a function of cluster size in the case of the same total energy and in the case of the same energy Per atom. The correlated collisions play an important role in interaction between energetic cluster and surface, and as cluster size and cluster energy increases, the correlated collisions effect affects interaction between energetic cluster and surface.

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