• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.188-190
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• 1995

This paper describes a soft switching using discontinuous inductor current. The soft switching snubber circuit provides ZCS and ZVS for main switch. For high power applications, the input ractifier is fed from a three-phase ac source. The Conventional switching method is hard switching technics, because of the device turn off is ocurred in maximum reactor current. In this time, switching losses are maximised by the hard switching. In generally, soft switching technique has been adjusted with the snubber condenser in order to compensates for this losses. So, it was compared hard switching with soft switching which has proposed in this paper for switching losses, distortion factor by the simulation.

• Korean Journal of Optics and Photonics
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• v.25 no.6
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• pp.301-310
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• 2014

Recently, the fringe-field switching (FFS) mode in liquid crystal displays has been used mainly for high image quality and high-resolution liquid crystal displays (LCDs). In this review paper, the fundamental switching principle of the FFS mode, with its excellence over other LC modes in electro-optic performance, will be described. In addition, the development history, present technical issues, and future of the FFS LCD will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.2 no.1
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• pp.35-42
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• 1977

An analysis has been made about the performance of the switching-mode amplifier which can improve its efficiency higher than class C in audio amplification, and the improvement of characteristics and constitution in using it for modulator circuits was considered. As a result, the linearity of modulation up to 97% and the frequency response keeping flat up to 7, 200Hz have been observed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.621-624
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• 2006

Pixel structure of the fringe-field switching (FFS) mode to improve transmittance has been studied. New FFS structures related to the electrode structure at the edges of pixel, and the pixel electrode width and distance between electrodes was optimized. The former improves transmittance by minimizing the region of disclination lines. The latter improves it by increasing light efficiency above center of electrodes and also response time.

• Journal of the Optical Society of Korea
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• v.11 no.1
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• pp.44-48
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• 2007

A two-stage gain-clamped erbium doped fiber amplifier (GC-EDFA) using a pump laser diode and a 16 channel wavelength division multiplexing (WDM) with 0.8 nm spacing in C band of $1,545{\sim}1,560nm$ wavelength is experimentally demonstrated for a burst packet mode optical switching system.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.39-42
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• 1998

This paper is presented the Partial Resonant Soft Switching Mode Power Converter which is adapted the power converter having the partial resonant soft switching mode, that makes switches operated when the resonant current or voltage becomes zero by making the resonant circuit partially at turning on and off of the switches with suitable layout of the resonant elements and switch elements in the converter. Also, this paper includes the analysis and simulation of the Partial Resonant type Buck-Boost Chopper.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.105-108
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• 2005

We demonstrate an electro-optical device based on the flexoelectric effect of a short-pitched cholesteric liquid crystal. By using a dual-frequency switchable nematic, a small amount of chiral dopant and a small amount of phase-separated polymer localized on the surface, we were able to create a device that operates in amplitude (flexoelectric) and phase(dielectric) modes. At high frequency the dual frequency liquid crystal suppresses the phase mode at higher voltage, which improves the switching speed, and thereby preserving the in-plane-switching mode.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.74-76
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• 1995

This paper describes the precise position control of the linear DC motor for carrier. We analyze the switching line of seek mode control and propose the modified switching line according to the mass and distance. Experimental results demonstrate that good performance is achieved by the proposed controller.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.857-860
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• 1991

This paper describes a High-Speed 8-bit Current-Mode BiCMOS A/D Converter. The characteristics of this A/D Converter are as fellows. First, as ADC is operating in current-mode we can obtain the properties of increase of converting speed, low noise, and wideband. Second, the properties of high switching speed in bipolar transistor and of high packing density, low power consumption in MOS trnsistor are combined. Finally we reduce chip area by designing it with subranging mode and improve the converting speed by performing subtraction directly, which doesn't need D/A convertings, using current switching element. This converter is composed of two 4-bit ADC, current soure array which provides signal and reference current, current comparator and encoding network.