• Journal of KIISE:Computer Systems and Theory
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• v.26 no.8
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• pp.984-998
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• 1999

최근 개인 휴대 통신에 대한 관심도가 증가하면서 B-ISDN (Broadband Integrated Services Digital Network)과 같은 기존의 유선 망에서 제공하던 다양한 멀티미디어 응용 지원을 무선 망으로 확장시키기 위한 연구가 활발히 진행되고 있다. 그러나 기존의 유선 망에서는 멀티미디어 응용 지원을 위해 QoS (Quality of Service) Provisioning에 관한 많은 연구가 되어 있으나 무선 망에서는 이동성과 무선 전파의 열악한 전송으로 인해 새로운 QoS Provisioning 방법에 관한 연구가 필수적이다. 본 논문에서는 이러한 무선 망의 특수성으로 인해 발생할 수 있는 서비스의 질 저하와 강제 종료를 줄임으로써 지속적인 QoS를 보장해 주고 한정된 무선 자원을 효율적으로 사용하며 처리에 의한 오버헤드를 줄이기 위하여 다음과 같은 세 가지 방법을 제안하였다. 첫째, 핸드오프 강제 종료율을 줄이기 위하여 대역폭 예약 방법을 사용하되 특정 셀의 트래픽 특성에 맞게 또한 시간대에 따른 트래픽 특성에 따라 예약 대역폭의 양을 조절하는 적응적 대역폭 예약 방법이다. 둘째, 많은 경우 각 셀의 트랙픽 변화는 일정한 주기로 변화한다는 특성에 따라 과거의 트래픽 정보를 이용하는 예측 기반의 대역폭 예약 방법이다. 마지막으로 호의 종류, 트래픽 특성, 단말기의 이동 속도에 따라 다른 우선 순위에 의해 호 수락 제어를 수행하는 우선 순위 기반의 호 수락 제어를 제안하였다. 시뮬레이션을 통하여 기존에 제안된 방법과 성능 비교하여, 요구되는 수준의 QoS 보장과 효율적인 자원의 사용, 요구되는 처리비용의 최소화를 통해 전체 시스템의 성능 향상을 입증하였다.Abstract As interest in wireless hand-held terminals and in personal communications services increases recently, there have been broad studies on the ways to support multimedia applications provided in wired networks such as B-ISDN (Broadband Integrated Services Digital Network) in wireless networks. However, since many studies have focused on Quality of Service (QoS) Provisioning in wired networks to provide multimedia applications, new methods of QoS Provisioning are needed in wireless networks to resolve the problem of wireless channel fading and the difficulty of mobility occurred in wireless networks. This paper proposes three schemes of QoS Provisioning in wireless networks which will make continuous QoS guarantee and efficient use of limited wireless resources possible. The first scheme reserves bandwidth in proportion to the amount of real-time traffic in the neighbor cells to decrease the handoff dropping rate of delay sensitive real-time connections, adapting reserved bandwidth for efficient resource utilization. The second scheme is predictive bandwidth reservation scheme that utilizes the past handoff information. It can decrease overheads required to adapt bandwidth reservation. The last scheme is priority-based call admission control prioritizing traffic type (real-time traffic/ non-real-time traffic), connection type (new connection /handoff connection), and mobile terminal speed (fast mobile/slow mobile). Simulation results show that the proposed QoS Provisioning schemes improve the total system performance by achieving three goals - required QoS guarantee, higher bandwidth utilization and less overhead.

• Journal of International Academy of Physical Therapy Research
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• v.4 no.2
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• pp.573-587
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• 2013

The purpose of this study was conducted in order to analyze the effects of the manual intervention and self-corrective exercise models of general coordinative manipulation(GCM) on the balance restoration of spine & extremities joints with distortions and mal-alignment areas. The subjects were the members who visited GCM Musculoskeletal Prevent Exercise Center from March 1 2012 to December 31 2013 because of spine & extremities joints distortion and mal-alignments, poor posture, and body type correction. All subjects were diagnosed with the four types of the GBT diagnosis. And according to the standards of the mobility vs stability types of the upper & lower body, they were classified into Group 1(40 persons) and Group 2(24 persons). For every other day for three times a week, GCM intervention models were applied to all subjects for four weeks, adding up to 12 times in total. Then the balance restoration effects were re-evaluated with the same methods. The results are as follows. 1) Balance restoration effects of VASdp(Visual analysis scale pain & discomfort) and ER(Equilibrium reaction: ER) came out higher in GCM body type(GBT) II III IV of Group 1. 2) In case of balance restoration effects in Moire and postural evaluation areas, Group 1 was higher and cervical and scapular girdle were higher in Group 2. The balance restoration of the four GBT types was significant in all regions(p<.05), and the scapular girdle came out as high in the order of GBTII IV I. 3) In case of thoracic-lumbar scoliosis and head rotation facial asymmetric cervical scoliosis ribcage forward, the balance restoration effects of the upper body postural evaluation areas came out the highest in Group 1 and Group 2, respectively. The balance restoration effects of the four GBT types were significant in all regions(p<.05), and came out the highest in lumbar scoliosis GBTIII I, ribcage forward and thoracic scoliosis GBTII IV. 4) The balance restoration effects of the lower body postural evaluation areas came out higher in Group 1 and Group 2 for pelvis girdle deviation patella high umbilicus tilt and hallux valgus foot longitudinal arch: FLA patella direction, respectively. The balance restoration effects of the four GBT types were significant in all regions(p<.05), and came out the highest in pelvis girdle deviation GBTIII I and patella high-direction GBTIV II I. 5) The balance restoration effects between the same GBT came out significant (p<.05) in all evaluation areas and items. The conclusions of this study was the manual intervention and self-corrective exercise models of the GCM about the mal-alignment of the spine & extremities joints across the whole body indicated high balance restoration effects(p<.05) in spine & extremities joints in all evaluation areas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.9-14
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• 2009

The effects of post-annealing temperature on the optical and electrical properties of P-doped ZnO thin films grown on sapphire substrate have been investigated under oxygen ambient. The XRD shows that regardless of the post-annealing temperature, all P-doped ZnO thin films indicate the c-axis orientation. The results of hall effect measurements indicate the P-doped ZnO thin film annealed at $850^{\circ}C$ exhibits p-type behavior with hole concentration of $1.18{\times}1016cm^{-3}$ and hole mobility of $0.96cm^2/Vs$. The low-temperature (10K) Photoluminescence results reveal that the peak related to the neutral-acceptor exciton (A0X), free electrons to neutral acceptor (FA) and donor acceptor pair (DAP) at 3.351ev, 3.283eV and 3.201eV are observed in the films showing p-type behavior with acceptor. The optimization of deposition and post-annealing conditions will certainly make the P-doped ZnO thin films promising materials for the application to the next generation of optical devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Archives of design research
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• v.14 no.3
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• pp.145-154
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• 2001

These days, the products like Walkman, mobile phone, notebook PC, PDA are moving together with our body, and in the imaginary world like internet, our other self, Avatar is moving in place of our body on the cyber world. These products are related with our human body, and when considering the ones, attached to the human body, and having the meaning of mental combination like these, as the combination of the human and the products, it is necessary to examine these products in approaching them with respect to the combination relation between the human and the products. As a result of examining we can understand that the products, said to combine with the human body, are coming oui steadily. and recently, the inclination on the combination and the movement appears strongly. As this background, there are a breakdown of dichotomy thought, mixed sexual imitation, cyber culture, techno culture. concept of informative nomands, phenomenon which the division of human and machine becomes vague. and the miniaturization of products. imitation of human, phenomenon that the Inclination on the combination with human is more accelerated by networking. These products combine with human body at each wearing type in the various forms. Its functions become multi-layered, and closer to the human body physically. or its communication becomes high·graded and, they have the recombined form through the existing products which the human has And, they communicate each other. have the strong fashionable property, and the characteristics like the imaginary product to imitate the human body and substitute for the human behave.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• Korean Journal of Environment and Ecology
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• v.18 no.1
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• pp.92-102
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• 2004

In this study, landscape changes were examined by periods through the analysis of visual quantity on the landscape components of national road including the mountains, the sky, road pavements, street trees, paddy fields and dry fields, billboard, telegraph pole, building, structure, slope, guard fence, soundproof wall, and median strip etc. For this, subject national road in suburb arreas was selected to grasp its landscape characteristics, and divisional criteria of landscape type of the national road were suggested to look into the trend of landscape changes by periods. Findings of this study are as follows：1.Divisional criteria of landscape type of the national road include location and geometry, structure, land use, perspective, and surrounding buildings of the national road. 2.The highest visual quantity was found in road pavements by periods among landscape components of the national road. It was found that this result has a thread of connection with previous study emphasizing the importance of road geometry as one of landscape components, and road geometry shall be regarded as a visually significant component in analyzing and evaluating landscape of the national road. 3.Most distinguished factors of landscape changes of the national road by periods were median strip(F＝33.296) and street tree(F＝32.881), and then the sky(F＝24.735) and mountain(F＝23.477) showed similar level of statistically significant difference. However, statistically significance difference was not found in buildings and structures. 4.It was shown that natural elements decreased gradually but structural landscape made of artificial elements became the main in construction of the national road. This result implies that although the scenic and ecological soundness is recognized in construction of the national road, it is not out of the limitation of functionalities that is, access and mobility.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.423-423
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• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.