• Journal of Information Display
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• v.10 no.1
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• pp.33-36
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• 2009

A new hybrid silicon thin-film transistor (TFT) fabrication process using the DPSS laser crystallization technique was developed in this study to realize low-temperature poly-Si (LTPS) and a-Si:H TFTs on the same substrate as a backplane of the active-matrix liquid crystal flat-panel display (AMLCD). LTPS TFTs were integrated into the peripheral area of the activematrix LCD panel for the gate driver circuit, and a-Si:H TFTs were used as a switching device of the pixel electrode in the active area. The technology was developed based on the current a-Si:H TFT fabrication process in the bottom-gate, back-channel etch-type configuration. The ion-doping and activation processes, which are required in the conventional LTPS technology, were thus not introduced, and the field effect mobility values of $4\sim5cm^2/V{\cdot}s$ and $0.5cm^2/V{\cdot}s$ for the LTPS and a-Si:H TFTs, respectively, were obtained. The application of this technology was demonstrated on the 14.1" WXGA+(1440$\times$900) AMLCD panel, and a smaller area, lower power consumption, higher reliability, and lower photosensitivity were realized in the gate driver circuit that was fabricated in this process compared with the a-Si:H TFT gate driver integration circuit

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.8
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• pp.632-636
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• 2009

The local oxidation using an atomic force microscopy (AFM) is useful for Si-based fabrication of nanoscale structures and devices. SiC is a wide band-gap material that has advantages such as high-power, high-temperature and high-frequency in applications, and among several SiC polytypes, 4H-SiC is the most attractive polytype due to the high electron mobility. However, the AFM local oxidation of 4H-SiC for fabrication is still difficult, mainly due to the physical hardness and chemical inactivity of SiC. In this paper, we investigated the local oxidation of 4H-SiC surface using an AFM. We fabricated oxide patterns using a contact mode AFM with a Pt/Ir-coated Si tip (N-type, 0.01-0.025 ${\Omega}cm$) at room temperature, and the relative humidity ranged from 40 to 50 %. The height of the fabricated oxide pattern (1-3 nm) on SiC is similar to that of typically obtained on Si ($10^{15}^{\sim}10^{17}$ $cm^{-3}$). We perform the 2-D simulation to further analyze the electric field between the tip and the surface. We demonstrated that a specific electric field (4 ${\times}$ $10^7\;V/m$) and a doping concentration ($^{\sim}10^{17}$ $cm^{-3}$) is sufficient to switch on/off the growth of the local oxide on SiC.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.38-47
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• 1989

A purely analytical model for HEMT's based on a two dimensional charge control simul-ation[4] is proposed. In this model proper treatment of diffusion effect of electron transport along a 2-DEG (two dimensional electron gas) channel is perfoemed. This diffusion effect is shown to effectively increase the bulk mibility and threshold voltage of the I-V curves compared to the existing models. The channel thickness and gate capacitance are expressed as functions of gate voltages covering subthreshold characteristics of HEMT's analytically. By introducing the finite channel opening and an effiective channel-length modulation, the solpe of the saturation region of the I-V curves ws modeled. The smooth transition of the I-V curves at linear-to-saturation regions of the I-V curves was possible using the continuous Troffimenkoff-type of field dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transition section forming between a GCA and a saturated section. This factor removes large discrepancies in the saturation region of the I-V curve predicted by existing l-dimensional models.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.34-38
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• 2000

This paper describes design, fabrication, and performance of an ultra-high-speed and low-noise MMIC (Monolithic Microwave Integrated Circuit) preamplifier for a 10 Gb/s optical receiver. The transimpedance type 3-stage MMIC preamplifier for ultra-high-speed and low-noise was designed using an AlGaAs/InGaAs/GaAs P-HEMTs(Pseudomorphic High Electron Mobility Transistors) with 0.15${\mu}{\textrm}{m}$ length T-shaped gate. To obtain broadband characteristics, we used the inductor peaking technique, and the gate width was optimized for low noise performance. Measurements reveal that the fabricated preamplifier has the high transimpedance gain of 60 ㏈Ω and 9.15 ㎓ bandwidth with the noise figure of less than 3.9 ㏈.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.206-214
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• 2017

SnS films have been prepared by electrodeposition technique onto Cu and ITO substrates using acidic solutions containing tin chloride and sodium thiosulfate with sodium citrate as an additive. The effects of sodium citrate on the electrochemical behavior of electrolyte bath containing tin chloride and sodium thiosulfate were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were characterized by XRD, FTIR, SEM, optical, photoelectrochemical, and electrical measurements. XRD data showed that deposited SnS with sodium citrate on both substrates were polycrystalline with orthorhombic structures and preferential orientations along (111) directions. However, SnS films with sodium citrate on Cu substrate exhibited a good crystalline structure if compared with that deposited on ITO substrates. FTIR results confirmed the presence of SnS films at peaks 1384 and $560cm^{-1}$. SEM images revealed that SnS with sodium citrate on Cu substrate are well covered with a smooth and uniform surface morphology than deposited on ITO substrate. The direct band gap of the films is about 1.3 eV. p-type semiconductor conduction of SnS was confirmed by photoelectrochemical and Hall Effect measurements. Electrical properties of SnS films showed a low electrical resistivity of $30{\Omega}cm$, carrier concentration of $2.6{\times}10^{15}cm^{-3}$ and mobility of $80cm^2V^{-1}s^{-1}$.

• The Journal of Korean Academy of Prosthodontics
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• v.29 no.2
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• pp.1-16
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• 1991

In order to see the possible effect of the functional load-bearing after osseointegration of the titanium root form implant in dog a histologic study was conducted. One side of lower jaw was surgically prepared edentulousness and titanium implants were inserted. Some implants were functionally loaded through fixed detachable prosthesis and some are isolated and unloaded. The dog was sacrificed four months later and bone sections with implants were processed for histologic evaluation and the results were as follows ; (1) The bone to implant interface after four months of load bearing presented no mobility and no marginal bone loss radiographically and histologically. (2) The interface zone between compact bone and implant revealed a direct bone to implant contact and in some areas marrow tissue contacts were examined at the light microscopic level. (3) At the ultrastructural level the interface of surrounding compact bone matrix and implant, three types of superficial layers were found ; one with moderate electron dense amorphous granular substance layer, other with high electron dense fine granular substance layer, and another type of amorphous granular substance covered with high electron dense line of minute granules. (4) The osteoblasts in the marrow tissue neighboring implants and osteocytes in compact bone showed typical normal characteristics and in the marrow tissues some of lymphocytes and mast cells were observed. (5) The abscence of abnormal tissue reactions at a cellular level indicates a high degree of biocompatibility for the experimental titanium implant and basically no difference was found between functionally loaded and unloaded implants.

• BMB Reports
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• v.35 no.3
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• pp.273-282
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• 2002

Sp3 is a bifunctional transcription factor that has been reported to stimulate or repress the transcription of numerous genes. Although the size of Sp3 mRNA is 4.0kb, the size of the known Sp3 cDNA sequence is 3.6kb. Thus, Sp3 functional studies have been performed with an artificially introduced start codon, and thus an amino-terminus that differs from the wild-type. Ideally, full-length cDNA expression vectors with the appropriate start codon should be utilized for these studies. Using 5'rapid amplification of cDNA ends, a full-length Sp3 cDNA clone was generated and the sequence verified in nine cell lines. No AUG initiation codon was present. However, stop codons were present in all three frames 5' to the known coding sequence. In vitro translation of this full-length cDNA clone produced the expected three isoforms-one at 100 kDa and two in the mid 60 kDa range. Electrophoretic mobility shift assays showed that the protein products had the ability to bind to the Sp1/3 consensus sequence. In vitro studies, using our Sp3 clone and site directed mutagenesis, identified the translation initiation site for the larger isoform as AUA. AUA has not been previously described as an endogenous initiation codon in eukaryotes.

• Asian Pacific Journal of Cancer Prevention
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• v.14 no.5
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• pp.3309-3314
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• 2013

Spleen tyrosine kinase (SYK) is a non-receptor type cytoplasmic protein and a known tumor suppressor gene in breast cancer. Polymorphisms in SYK have been reported to be associated with cell invasion/cell morality and an increased risk of cancer development. In this case control study, all exons of the SYK gene and its exon/ intron boundaries were amplified in 200 breast cancer cases and 100 matched controls and then analyzed by single stranded conformational polymorphism. Amplified products showing altered mobility patterns were sequenced and analyzed. Twelve variations were identified in exonic and intronic regions of DNA encoding SH2 domain and kinase domain of the SYK gene. All of these mutations are novel. Among them, 5 missense mutations were observed in exon 15 while one missense mutation was found in exon 8. In addition to these mutations, six mutations were also identified in intronic regions. We found a significant association between SYK mutations and breast cancer and observed that Glu241Arg, a missense mutation is associated with an increase risk of ~7 fold (OR=6.7, 95% CI=1.54-28.8), Thr581Pro (missense mutation) is associated with increased risk of ~16 fold (OR=15.5, 95%CI=2.07-115.45) and 63367 T>G (missense mutation) is associated with increased risk of ~13 fold (OR=12.8, 95%CI=1.71-96.71) for breast cancer. Significant associations were observed for each of these variations with both late menopause (p<0.01) and early menarche (p<0.005) cases when compared to controls. Our findings suggest that the polymorphic gene SYK may contribute to the development of breast cancer in at least the Pakistani population. This study provides an insight view of SYK which may provide a significant finding for the pharmaceutical and biotechnology industry.

• Journal of Korean Academy of Nursing
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• v.17 no.2
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• pp.137-144
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• 1987

The main purpose of this study was to examine the validity of the vital sign as an instrument of stress reaction measurement. From July to August 1986, stress reaction was evaluated by the difference of endoscopic vital sign on 93 G-I troubled out-patients who underwent endoscopy for the first time and did not have any evidence of cardiovascular disease. The data were analysed by x$^2$-test, Paired . t-test, ANCOVA and Multiple Comparison Test. The result of study were as follows: 1. The frequency of gastric disease was differed by the family type, and the mobility of gastritis and gastric cancer were more increased in nuclear family than in large family (p=0.019). 2. In a comparison of before with after 5 minutes endoscopic vital sign, and a Pulse rate (P=0.0001), respiration rate (p=0.0001), systolic blood pressure (p=0.0002) and diastolic blood Pressure (P=0.006) were significantly increased after 5minutes by endoscopy in contrast with before 5minutes. 3. The control of before 5 minutes of endoscopic vital sign, after 5 minutes of endoscopic systolic (p=0.024) and diastolic blood pressure (p=0.0146) were more elevated in biopsyed group than in non-biopsyed, group. And after 5minutes of endoscopic respiration rate was more increased in gastric cancer than in gastritis (p=0.0406) or gastric ulcer (p=0.0073). And after 5 minutes of endoscopic systolic blood pressure was elevated over 50years old men (P=0.0238). In short, the increase of a pulse rate af ter 5 minutes of endoscopy was not influenced by general characteristics of samples in this experiment. And systolic blood pressure over 50years old men must be considered of physiological hypertension.