• 대한건축학회논문집:계획계
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• 제36권5호
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• pp.125-135
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• 2020

The purpose of this study is to identify the background and nature of residential mobility and its influencing factors in Seoul metropolitan area. Spacial range of this study includes from Seoul to Gyeong-in area(Gyeonggi-do and Incheon). To measure this tendency, this study established hypotheses and two logistic regression models through previous researches and conducted an analysis based on 1,911 and 2,923 samples, which experienced inbound and outbound moving between the two areas. This research found that residential mobility from Seoul to Gyeong-in and those moving from Gyeong-in to Seoul had some differences in the household, socio-economic, environmental, and housing characteristics that affected the moving to each area, as well as the architectural and urban environmental characteristics that affect the Quality of Life(QoL) of the households after the residential mobility was completed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.51-54
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• 1996

This paper reports the studies of the inversion layer mobility in p-channel Si MOSFET's under hot-carrier degradated condition. The validity of relationship of hot carrier degradations between the surface effective mobility and field effect mobility and are examined. The effective mobility(${\mu}$$\_$eff/) is derived from the channel conductances, while the field-effect mobility(${\mu}$$\_$FE/) is obtained from the transconductance. The characteristics of mobility curves can be divided into the 3 parts of curves. It was reported that the mobility degradation is due to phonon scattering, coulombic scattering and surface roughness. We are measured the mobility slope in curves with DC-stress [V$\_$g/=-3.1v]. It was found that the mobility(${\mu}$$\_$eff/ and ${\mu}$$\_$FE/) of p-MOSFET's was increased by increasing stress time and decreasing channel length. Because of the increasing stress time and increasing V$\_$g/ is changed oxide reliability and increased vertical field.

• 한국전기전자재료학회논문지
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• 제20권11호
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• pp.939-942
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• 2007

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.73-74
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• 2007

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

• 한국정보통신학회논문지
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• 제25권8호
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• pp.1082-1087
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• 2021

노드 이동 모델은 활용 서비스 및 목적에 따라 제안되어야 한다. 현재 가장 널리 활용되는 무작위 이동 모델은 간편하고 구현하기가 쉽다는 장점이 있다. 이 모델에서 노드 이동 특성은 이동 속도와 이동 방향을 무작위 속성으로 처리하며, 매번 노드들의 이동이 서로 독립적으로 발생한다. 본 논문에서는 모바일 애드혹 네트워크 이동 환경에서 적용 가능한 확률론적인 이동 모델을 제안한다. 제안 확률 이동 모델에서는 네트워크의 전체 노드 이동 특성을 표현하기 위하여 이동하는 노드 수와 노드 이동 거리가 특정 확률 분포 특성을 가지도록 랜덤 변수로 처리한다. 또한, 제안 이동 모델을 대표적인 무작위 이동 모델과 비교하여 노드들의 이동 변화에 안정적인 특성을 나타냄을 보이고, 기존 라우팅 프로토콜에 제안 모델을 적용하여 에너지 소비 효율 측면에서 향상된 특성을 보임을 확인한다.

• 한국주거학회논문집
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• 제19권6호
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• pp.73-83
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• 2008

We explore what factors influence the residential choice and mobility of people, and try to figure out the preferable residential district in Deagu. Household, housing characteristics, and neighborhood environments are considered as explanatory variables to predict the residential choice and the preferable residential district, and logit regression is used for the analysis. We found age, ownership, income, property, and education level as household characteristics, building age as housing characteristics, and accessibility to park and open space, public library and shopping mall as neighborhood environments are significant in determining residential choice of people whereas housing size, accessibility to elementary school, local market, cultural facility and gymnasium are not significant. These results imply people choose the residential district according to household characteristics as they did, as well as choose according to housing characteristics and neighborhood environments which are newly issued factors.

• 대한산업공학회지
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• 제29권4호
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• pp.292-303
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• 2003

An efficient mobility management for mobile stations plays an important role in mobile communication network. Two basic operations of mobility management are location registration and paging. A zone-based registration (ZBR) is implemented in most of mobile communication systems and we consider the mobility management scheme that combines a zone-based registration and a selective paging (SP). We propose new analytical model that can reflect on the characteristics of the ZBR based on 2-dimensional random walk mobility model and more efficient paging schemes considering the proposed model. We evaluate the performance of the mobility management scheme with our mobility model to determine the optimal size of location area that will result in the minimum signaling traffic on radio channels. Numerical results are provided to demonstrate that our mobility model is useful to evaluate the ZBR more exactly.

• 한국ITS학회 논문지
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• 제22권6호
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• pp.92-101
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• 2023

개인형 이동장치의 사용 증가에 따라 관련 교통사고와 사회적 문제가 증가하는 상황에서 정부는 문제 해결을 위해 관련 법규를 지속적으로 개정하고 있다. 개정된 법규가 개인형 이동장치 안전에 미치는 영향력을 분석하기 위해 본 연구에서는 2021년 5월에 개정된 법규에 기반하여 사용자가 느끼는 위험특성과 법제도에 대한 대중의 인식을 반영한 설문조사를 실시하였다. 설문조사 결과, 보도와 차도가 구분되지 않은 도로주행, 과속주행, 2인 탑승 등이 개인형 이동장치의 위험특성으로 분석되었으며 이는 개정된 개인형 이동장치 관련 법제도에 대한 인지도가 낮기 때문이라는 결론을 도출하였다. 따라서 개인형 이동장치의 보급이 확대됨에 따라 개인형 이동장치 관련 제도개선에 대한 시민들의 인지도 및 개선된 법규의 준수율 향상이 반드시 필요하다.

• 대한지리학회지
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• 제30권2호
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• pp.120-131
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• 1995

이동행태를 분석하기 위해 시.공간이론 중 3가지 제약조건인 능력제약, 조합제약, 권위제약이 공간특성에 따라 성별, 연령이 이동에 어느 정도 영향을 주는지를 분석하고 적 정 이동군집수를 결정하고자 한다. 이중 권위제약은 사회적 제약조건으로서 도시시설물이나 교통수단의 이용에 있어 사회적 신분이나 규약에 의해 이동영역이 통제되는 것을 의미한다. 공간특성에 의한 이동의 통제는, 도시와 농촌으로 구분하였을 때 도시지역 사람들은 농촌지 역 사람들에 비해 첨두시간대의 이동 참여율이 높으며, 이동군집수 결정에 있어서도 여러 연령층이 유사한 이동행태를 지니고 있음을 알 수 있다. 도시지역 사람들은 공간특성상에 따른 이동의 다양성이 군집수 결정에 상관되었으며, 이는 공간특성에 따라 이동행태가 달라 질 수 있다고 볼 수 있다. 성별 및 연령에 의한 통제 역시 사회적 제약조건으로서 이동행태 에 영향이 있음을 알 수 있다.

• 전자공학회논문지A
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• 제33A권10호
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• pp.123-129
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• 1996

LDD structure is widely accepted in fabricating short channel MOSFETs due to reduced short channel effect originated form lower drain edge electric field. However, modeling of the LDD device is troublesome because the analysis methods of LDD region known are either too complicated or inaccurate. To solve the problem, this paper presents a nonlinear resistance model for the LDD region based on teh fact that the electron mobility changes with positive gate bias because accumulation layer of electrons is formed at the surface of the LDD region. To prove the usefulness of the model, single source/drain and LDD nMOSFETs were fabricated with 0.35$\mu$m CMOS technolgoy. For the fabricated devices we have measured I$_{ds}$-V$_{gs}$ characteristics and compare them to the modeling resutls. First of all, we calculated channel and LDD region mobility from I$_{ds}$-V$_{gs}$ characteristics of 1050$\AA$ sidewall, 5$\mu$m channel length LDD NMOSFET. Then we MOSFET and found good agreement with experiments. Next, we use calculated channel and LDD region mobility to model I$_{ds}$-V$_{gs}$ characteristics of LDD mMOSFET with 1400 and 1750$\AA$ sidewall and 5$\mu$m channel length and obtained good agreement with experiment. The single source/drain device characteristic modeling results indicates that the cahnnel mobility obtained form our model in LDD device is accurate. In the meantime, we found that the LDD region mobility is governed by phonon and surface roughness scattering from electric field dependence of the mobility. The proposed model is useful in device and circuit simulation because it can model LDD device successfully even though it is mathematically simple.