• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.72.2-72
• /
• 2003

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.80.2-80
• /
• 2003

• Proceedings of the KAIS Fall Conference
• /
• 2004.11a
• /
• pp.277-279
• /
• 2004

$300^{\circ}C$ 소성 Pt/MoO3가 수소를 흡착후 탈착하는 속도를 측정하였다. 두가지 흡착 속도를 나타내는 Pt/MoO3 촉매에서 탈착량은 흡착량과 탈착 온도의 증가에 비례하는 것을 알 수 있었다. 또한 X-Ray Photoelectron Spectroscope(XPS) 결과로부터 Pt와 MoO3간의 활성점에 존재하는 Cl의 존재가 수소 이동 속도를 결정하는 것으로 판단되었다.

• Bulletin of the Korean Chemical Society
• /
• v.18 no.10
• /
• pp.1082-1085
• /
• 1997

The Near-Edge X-ray Absorption Fine Structure (NEXAFS) technique and Differential Scanning Calorimetry (DSC) were utilized to investigate the reaction of CH4 and O2 on the MoO3/SiO2 catalyst. The NEXAFS results showed that the stoichiometry of the molybdenum oxide catalyst supported on silica was MoO3. MoO3 was reduced to MoO2 when the catalyst was exposed to CH4 at 773 K. NEXAFS results confirm that lattice oxygen is directly related to the process of CH4 oxidation which takes place on the surface of MoO3/SiO2 catalysts. DSC results show that the structure of MoO3 changes around 573 K and this structural change seems to improve the migration of oxygen in the lattice.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.233-239
• /
• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Korean Journal of Materials Research
• /
• v.29 no.11
• /
• pp.715-719
• /
• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• Journal of the Korean Ceramic Society
• /
• v.35 no.3
• /
• pp.219-230
• /
• 1998

Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

• Journal of Korea Foundry Society
• /
• v.29 no.2
• /
• pp.70-77
• /
• 2009

The aim of this study was to develop a Mo and V free low alloy cast steel materials, enabling the significant cost- and time-savings in manufacturing and maintaining the insert of cold pressing die without impairment of the important properties. For this purpose, the effects of Si content on combinations of important properties such as hardness, hardenability, and weldability, and strength were systematically investigated. In order to evaluate the applicability as the insert of cold pressing die, the mechanical properties were measured after spheroidization annealing, quenching and tempering, and flame hardening heat treatments, respectively. After the Q/T and F.H. treatments, the developed 0.8${\sim}$1.6%Si containing Mo and V free low alloy cast steels showed excellent matrix strengthening effect, hardenability, and weldability, fulfilling the industrial criterion of the mechanical properties for automobile cold pressing die insert.

• Applied Chemistry for Engineering
• /
• v.8 no.2
• /
• pp.191-196
• /
• 1997

The isothermal reduction on $Pt/MoO_3/SiO_2$ at $50^{\circ}C$ demonstrates that the rate of hydrogen spillover is increased as calciantion temperature increases. That is due to the overlayer formation over the surface of Pt crystallites, investigated by TEM and CO chemisorption. It is known that reaction mechanism of skeletal isomerization of 1-butene into iso-butene is composed of 2 step such as formation of carbonium ion and isomerization of methyl group. It is expected that the increase of i-butene yield after calcination at $250^{\circ}C$ is due to increased rate of hydrogen spillover coming from first, overlayer formation over Pt surface and second, chlorine lessoning from $PtCl_x$ precursor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.557-563
• /
• 2003

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.