• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1149-1150
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• 2006

The oxidation of (W,Mo)$Si_2$ powders has been investigated at 400, 500 and $600^{\circ}C$ for 12.0 hours in air. It was shown that the low temperature oxidation resistance of (W,Mo)$Si_2$ was worse than that of $MoSi_2$, and they showed great changes in mass, volume and colour. Especialy at $500^{\circ}C$, the amount of volume expansion of (W,Mo)$Si_2$ was as high as about $7\sim8$ times and color changed from black to yellow after 4.0h with $MoO_3$, $WO_3$, (W,Mo)$O_3$ and amorphous $SiO_2$ as main reaction products. The mass gain and oxidation rate were relatively slower at $400^{\circ}C$ and $600^{\circ}C$ than that at $500^{\circ}C$.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
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• pp.155.2-155
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• 2003

• Current Photovoltaic Research
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• 제5권4호
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• pp.145-149
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• 2017

Transition metal dichalcogenides (TMDs) have attracted much attention because of their excellent optical and electrical properties, which are the applications of next generation photoelectric devices. In this study, $MoS_2$, which is a representative material of TMDs, was formed by magnetic sputtering method and surface changes and optical characteristics were changed with thickness variation. In addition, by implementing the photodetector of $MoS_2/p-Si$ structure, it was confirmed that the change of the electrical properties rather than the change of the optical properties according to the thickness change of $MoS_2$ affects the photoresponse ratio of the photodetector. This result can be used to fabricate effective photoelectric devices using $MoS_2$.

• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.103-104
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• 2007

Cr-Mo-Si-N 코팅막은 AISI D2 모재와 Si 모재위에 $Ar/N_2$ 혼합기체를 사용하여 AIP (arc ion plating) 방법과 마그네트론 스퍼터링 (DC magnetron sputtering) 방법을 결합시킨 하이브리드 코팅시스템을 이용하여, 증착하였다. XRD, HRTEM, XPS 등의 분석장비를 이용하여 Cr-Mo-Si-N 코팅의 미세구조를 관찰하였다. Cr-Mo-Si-N 코팅의 경도는 Si함량이 12.1 at.%에서 약 50 GPa의 최고치를 나타냈으며, 평균 마찰계수는 Si 함량이 증가할수록 감소하였다.

• 폴리머
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• 제25권3호
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• pp.435-440
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• 2001

본 연구에서는 일방향 탄소/탄소 복합재료에 산화억제제로 사용된 $MoSi_2$의 첨가량에 따른 복합재료의 부착력, 파괴인성 그리고 충격강도와의 관계를 고찰하였다. 산화억제제로 사용한 이규화 몰리브덴 (MoSi$_2$)은 복합재료의 내산화 특성을 향상시키기 위하여 각각 4, 12, 20wt%의 중량비로 페놀수지에 함침시켰다. 본 연구에 있어서 복합재료의 부착력은 접촉각 측정에 의한 Wilhelmy 방정식을 사용하여 계산하였다. 파괴인성과 충격강도는 임계 세기인자 측정을 위한 3점 굴곡 시험 방법과 Izod 충격시험에 의해 각각 측정하였다. 그 결과, $MoSi_2$가 첨가된 탄소/탄소 복합재료의 파괴인성과 충격강도는 증가하였다. 특허 l2wt%의 $MoSi_2$가 첨가된 복합재료가 London dispersive 요소($W_A\;^L$)의 증가에 의한 가장 큰 부착력을 나타내었으며, 이는 복합재료의 각 구성요소간의 계면결합력 증가에 따른 결과라 사료된다.

• 한국분말재료학회지
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• 제6권2호
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• pp.178-185
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• 1999

MoSi$_2$-TiC composite powders were fabricated by in-situ reaction through mechanical alloying. Also the monolithic MoSi$_2$ as well as TiC were synthesiced by mechanical alloying for comparison. An abrupt increase of vial surface temperature was detected due to a sudden reaction between elemental powders during milling. The reaction time for synthesis of composite powders decreased with increasing the content of (Ti+C) powder. It was found that a significant decrease of Ti grain size was observed with increasing the milling time. And the synthesis reaction of MoSi$_2$-TiC composite powders were largely dependent on the reaction between Ti and C powders.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1325-1326
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• 2006

Tungsten-molydiside $W_xMo_{1-x}Si_2$ was synthesized by self-propagating high temperature synthesis (SHS). The SHS product with the initial composition of (0.5Mo+0.5W+2Si) contains 23.9% $MoSi_2$, 40.89% $WSi_2$ with remaining 9.11% Mo, 9.16% Si and 16.94%W. Lattice parameters of the $MoSi_2$ and $WSi_2$ determined by Rietvelt analysis were a=0.3206 nm, c=0.7841 nm and a=0.3212 nm, c=0.7822 nm, respectively.

• 한국재료학회지
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• 제9권1호
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• pp.92-98
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• 1999

(Mo.W)Si$_2$ composites were fabricated by vacuum hot-pressing elemental Mo, W and Si powders at various temperatures. Elemental Mo, W and Si powders were alloyed in the proper proportions to form solid solutions. The microstructure and properties of these materials was characterized by using x-ray diffraction, optical microscopy, energy dispersive x-ray spectroscopy and Vicker's technique. It was found that tungsten was mainly substituted for Mo atoms, and made a completed solid solution of (Mo.W)Si$_2$ over 1$600^{\circ}C$. The lattice parameters and Vickers hardness increased largely with increasing reaction temperature by the most soluble elements, due to the solid-solution hardening.

• 마이크로전자및패키징학회지
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• 제8권2호
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• pp.19-24
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• 2001

EUV 노광공정의 반사형 노광계 및 마스크에 사용되는 Mo/Si 다층박막 착탁 시 발생하는 각 층의 두께 변화와 상호확산 층 (inter-diffusion layer)이 생성될 경우에 대하여 이들이 다층박막 반사도에 미치는 영향을 전산모사를 통하여 알아보았다. 본 연구그룹에서 개발한 다층박막 반사 시뮬레이션 프로그램을 사용하여 Mo/Si 40-period박막의 반사토플 계산한 결과, 각각의 period가 두께의 편챠(28%)를 갖는 경우, 모든 period가 같은 두께를 갖는 다층박막에 비해 최대반사도가 10.8% 감소가 되었으며 두 층간 물질 사이의 상호확산(interdiffustion) 층을 가정하였을 경우, 다층박막의 경우 그렇지 않은 경우에 비해 4.7%의 최대반사도가 감소가 예상되었다. 그리고 각 층의 적층에 따른 반사도의 변화를 시뮬레이션 프로그램을 통해 계산한 결과 반사도는 25층까지 계속 증가하며 26층부터 불규칙한 경향성을 가지며 증가와 감소를 반복함을 알 수 있었다.