• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.886-889
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• 2000

This paper describes the machining characteristics of the MoSi$_2$-based composites by electric discharge drilling with various tubular electrodes. MoSi$_2$-based composites has been developed in new materials for jet engine of supersonic-speed airplanes and gas turbine for high- temperature generator. By combining a nonconducting ceramics with more conducting ceramic it was possible to raise the electrical conductivity. In drilling by EDM, the dielectric flushed down the interior of the rotating tube electrode, in order to facilitate the removal of machining debris from the hole. Various metal-coated tubular electrodes of which core are copper and brass are used to know the effect of coating material on machinability of ED drilling.

• Journal of Magnetics
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• v.11 no.3
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• pp.143-146
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• 2006

We attempted to fabricate a new type of magneto optic spatial light modulator (MO-SLM) for multiple-tone modulation by using in-plane magnetization. In the MO-SLM, magnetic property of magneto-optical layer was modified to be suitable for multiple-tone expression by substituting Al in Bi:YIG film. At a driving current to 28 mA in an electrode of the fabricated MO-SLM, changes in brightness of pixels were observed using a polarization microscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.460-463
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Journal of the Semiconductor & Display Technology
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• v.6 no.4
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• pp.11-15
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• 2007

As preparing electrode for the OLED with the sputtering process, in order to be lower damage of the bottom organic layer and increase the life-time of the OLED, we prepared Al electrode for that by using Facing Targets Sputtering (FTS) system. Al electrode directly deposited on the cell (LiF/EML/HTL/Bottom electrode). Deposition condition was the working gas (Ar, Kr and Ar+Kr) and working gas pressure (1 and 6 mTorr). The film thickness and I-V curve of Al/cell were evaluated by a $\acute{a}$-step profiler and a semiconductor parameter (HP4156A) measurement. The thin film surface image was observed by a Atomic Force Microscope (AFM). In result, in comparison with about 11 [V] of the turn-on voltage of Al/cell with using the pure Ar gas, when Al thin film was deposited using the Ar-Kr mixture gas, the surface morphology was improved in some region and the turn-on voltage of Al/cell could be decreased to about 7 [V].

• Journal of the Korean Society of Safety
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• v.23 no.4
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• pp.42-46
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• 2008

Ionizers are essential in various areas of manufacturing industries to protect electrostatic hazards and to reduce inferior products. For ion sources used in the charge neutralizers, there are corona discharge, soft X-ray, ultraviolet and glow discharge. Glow discharge has lots of attractive properties, such as lower discharge sustaining voltage, no generation of ozone, and so on. In this paper, we did an experimental study to trace the mechanism and stabilization of atmospheric pressure glow discharge using the several size and shape of electrodes. As an experimental result, to sustain conditions of atmospheric pressure glow discharge is that discharge voltage is 360V, discharge current is 12mA, apply frequency is 1kHz between electrodes when positive electrode is molybdenum(Mo) and negative electrode is copper(Cu). We confirmed that the mechanism and stabilization of atmospheric glow discharge is deeply concerned with the shape and material of electrode for discharge. Especially, glow discharge in atmospheric pressure was well generated and sustained according with the physical properties used electrode materials, example melting point, thermal conductivity, and etc.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1361-1363
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• 2005

In this paper, we report on the performance stability of solution processible OTFT devices with Au/Ti and ITO source-drain (S/D) electrodes. It appears that the contact resistance of the S/D electrode strongly affects the stability of OTFT devices. Interestingly, the devices with the Au/Ti electrode showed lower mobility than those with the ITO (S/D) devices. The field effect mobilities of the devices with the Au/Ti and ITO electrodes were 0.06, and $0.44cm^2/Vs$, respectively. However, the mobility of the device with the Au/Ti electrode was increased up to $0.26cm^2/Vs$ after 2 weeks, while the mobility of the device with ITO electrode was slightly decreased down to $0.41cm^2/Vs$. The experimental data show us that ITO could be used as the S/D electrode for low-cost OTFT devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1024-1026
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• 2004

We have developed the five mask $PMOS^1$ and the six mask CMOS process architecture for poly-Si TFT. In order to have a competitive process with that for a-Si TFT, the simple co-planar electrode structure whose data line electrode and pixel electrode are on the same plane was adopted. In addition, RGB + White four color $technology^2$ were applied to achieve high aperture ratio and transmittance. Using the aforementioned process architecture and four color technology, 2.0 inch qCIF transmissive micro-reflectance (TMR) device was successfully fabricated.

• Toxicological Research
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• v.33 no.2
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• pp.135-140
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• 2017

The cobalt (Co(II)) ion is a main component of alloys and considered to be carcinogenic, especially due to the carcinogenic and toxicological effects in the aquatic environment. The toxic trace of the Co(II) detection was conducted using the infrared photodiode electrode (IPDE) using a working electrode, via the cyclic and square-wave anodic stripping voltammetry. The results indicated a sensitive oxidation peak current of Co(II) on the IPDE. Under the optimal conditions, the common-type glassy carbon, the metal platinum, the carbon paste, and the carbon fiber microelectrode were compared with the IPDE in the electrolyte using the standard Co(II). The IPDE was found to be far superior to the others.