• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1996년도 제23회 춘계학술대회
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• pp.122-127
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• 1996

In this paper, the effects of the film tinckness, pre-treatment and testing load on. the tribological characteristics have been studied. During the "Ring on-Disk" testing period silica-gel was used to remove the effect of humidity. As a result, increasing the film thickness revealed prolonged wear life, in the case or reasl the testing loads the dynamic friction coefficient was decreased gradually but in regarding the wear life, an intermideate contact pressure (4kgf/mm${2}$) revealed the maximum value. In regarding the surface protuberance friction an intermediate value of area fraction (60%) revealed maximum wear life. In this paper, the qualitative model in regarding the variation of the friction coefficient andworn depth was presented.presented.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.1-4
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• 1998

Diamond film was deposited on Mo substrate at atmospheric pressure using combustion flame apparatus with the addition of H2. At a temperature above 100$0^{\circ}C$, parts of the film were converted into graphites and these were etched by hydrogen atoms. With increasing $C_2H_2/O_2$ ratio, the nucleation density of the film increased. But the greater part of the film was formed with cauliflower-shaped amorphous carbon. These amorphous carbn were crystallized etching amorphous carbon.

• Korean Chemical Engineering Research
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• 제49권2호
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• pp.195-199
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• 2011

DC 마그네트론 스퍼터링 방법을 이용하여 soda lime glass 위에 Mo 박막을 증착하였다. DC power와 증착 압력을 변화시키면서 상온에서 Mo 박막을 증착하였고 증착된 박막의 전기적 성질 및 구조적 성질을 조사하였다. DC power가 증가할수록 박막의 증착속도는 증가되었고 전기 저항도는 감소하였으며 박막의 결정성이 향상되는 것을 관찰할 수 있었다. 증착 압력이 감소할수록 박막의 증착속도와 전기 저항도가 감소하였으며 가늘고 긴 모양의 결정입자가 조밀하게 박막을 형성하였다. 압력이 증가함에 따라서 결정입자는 원형으로 변형되었으며 박막의 표면에 공극의 생성이 증가하였다. Mo 박막의 전기 저항도는 Mo 원자에 결합된 산소의 양이 많아질수록 증가하게 되고, 박막의 결정성이 높아지면 산소의 결합도가 감소하여 낮은 저항도를 갖게 되는 것을 확인하였다.

• 한국진공학회지
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• 제6권2호
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• pp.143-150
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• 1997

본 연구에서는 1000$\AA$두께의 Molybdenum화합물(Mo, Mo-N,$MoSi_2$, Mo-Si-N)의 Cu에 대한 확산방지막으로서의 특성을 면저항측정장비(four-point-probe), XRD, XPS, SEM, RBS 분석을 통하여 조사하였다. 각 박막층은 dc magnetron sputtering장비를 이용하 여 증착되었고 $300^{\circ}C$-$800^{\circ}C$의 온도구간에서 30분동안 진공열처리하였다. Mo 및 $MoSi_2$ 방지 막은 낮은 온도에서 확산방지막으로서의 특성파괴를 보였다. 결정립계를 통한 Cu의 확산과 Mo-실리사이드내의 Si의 Cu와의 반응이 그 원인인 것으로 사료된다. 질소를 첨가한 시편의 경우 확산방지특성 파괴온도는 Mo-N방지막의 경우 $650^{\circ}C$-30분, Mo-Si-N방지막의 경우 $700^{\circ}C$-30분으로 향상되었다. Cu와 Si의 확산은 방지막의 결정립계를 통하여 더욱 빠르게 확 산된다. 따라서 증착시 결정립계를 질소와 같은 물질로 채워 Cu와 Si의 확산을 저지할 수 있을 것으로 사료된다. 본 실험결과에서의 질소첨가는 이와 같은 stuffing 효과외에도 Mo- 실리사이드 박막의 결정화 온도를 다소 높인 것으로 나타났고, 그 결과 결정립계의 밀도를 감소시켜 확산방지막으로서의 특성을 향상시킨 것으로 사료된다. 또한 질소첨가는 실리사이 드내의 금속과 실리콘과의 비를 변화시켜 확산방지막의 특성에 영향을 미친 것으로 보인다. 본 실험에서 조사된 확산방지막 중에서는 Mo-Si-N박막이 Cu와 Si간의 확산을 가장 효과적 으로 저지시킨 것으로 나타났으며 $650^{\circ}C$-30분까지 안정한 특성을 보였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.72-72
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• 2003

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
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• pp.217-218
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• 2000

This paper describes a formation of the Mo-silicide on Mo tip to compare the emission characteristics of the Mo tip. Cone-shaped Mo tip arrays were fabricated and silicidized by evaporating a 15nm-thick a-Si film on Mo tip arrays and annealing it in inert ambient at the temperature of $1000\;^{\circ}C$ for 60 sec. The $Mo_5Si_3$ phase of Mo-silicide was observed through X-ray diffraction (XRD) analysis. Although the gate voltage of the Mo-silicide tip increased by 38 V to obtain the current level of 20 nA/tip, the dependence of emission current on vacuum level was improved.

• 한국재료학회지
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• 제17권1호
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• pp.25-30
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• 2007

The in-situ scanning electron microscopy observation of real-time hillock evolution in pure hi thin films on glass substrate during Isothermal annealing was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation by in-situ scanning electron microscopy observation ana the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

• Journal of Mechanical Science and Technology
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• 제16권9호
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• pp.1065-1071
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• 2002

The friction and wear behaviors of magnetron sputtered MoS$_2$ films were investigated through the use of a pin and disk type tester. The experiments were performed for two kinds of specimens (ground (Ra 0.5 $\mu\textrm{m}$) and polished (Ra 0.01 $\mu\textrm{m}$) substrates) under the following operating condifions : linear sliding velocities in the range of 22～66 mm/s (3 types), normal loads varying from 9.8～29.4 N(3 types) and atmospheric conditions of air, medium and high vacuum (3types). Silicon nitride pin was used as the lower specimen and magnetron sputtered MoS$_2$ on bearing steel disk was used as the upper specimen. The results showed that low friction property of the MoS$_2$ films could be identified in high vacuum and the specific wear rate in air was much higher than that in medium and high vacuum due to severe oxidation. It was found that the main wear mechanism in air was oxidation whereas in high vacuum accumulation of plastic flow and adhesion, were the main causes of wear.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.