• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.19-24
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• 2001

The effect of thickness variation and inter-diffusion layer on the reflectivity of Mo/Si multilayer has been investigated. The reflectivity of the imperfect Mo/Si multilayer with thickness variation of 28% was found to be lowered by 10.8% compared to that of ideal Mo/Si multilayers with 40-periods. When the inter-diffusion layer is taken into account, the reflectivity is decreased by 4.7% additionally. We also fecund that the reflectivity continued to increase until the 25th-layer but it showed irregular tendencies about increment and decrement from the 26th-layer of Mo/Si multilayer structures.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.297-301
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• 2006

Si/Mo multilayer anode consisting of active/inactive material was prepared using rf/dc magnetron sputtering. Molybdenum acts as a buffer against the volume change of the Silicon. Multilayer deposited on RT (reversible treatment) copper foil current collector to enhance adhesion between Silicon and copper foil. Deposited Silicon was identified as an amorphous. Amorphous has a relatively open structure than crystal structure, thus prevents the lattice expansion and has many diffusion paths of Li ion. When deposited time of Silicon and Molybdenum is 30 second and 2 second respectably, electrode has more capacity and good cycle stability. A 3000 nm thick multilayer was maintained 99% of the initial capacity (1624 $mAhg^{-1}$) after 100 cycles. As the increase of the multilayer thickness (4500 nm, 6000 nm), Si/Mo mutilayer anodes show aggravation cycle stability.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.507-514
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• 1993

The solid state reaction of Mo/Si multilayer thin films produced by RF magnetron sputtering technique was examine dusing differential scanning calorimetry (DSC) and x-ray diffraction, and explained in view of two concepts, effective drivig force and effective heat of formation. In constant scanning rate DSC, there were two exothermic peks which corresponded to the formation of h-MoSi2 and t-MoSi2 , respectively. The activation energyfor theformation of h-MoSi2 was 1.5eV , and that of t-MoSi2 was 7.8eV. Nucleation wa stherate controlling mechanism for each of the silicide formation. Amorphous phase was not formed , which was consistent withtheprediction by the concept of effective driving force. h-MoSi2 the first crystalline phase, was considered to have lower interfacial free energy than t-MoSi2 and by increasing temperature it was transformed into more stable t-MoSi2.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.15-18
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• 2001

The Mo/si multilayer for EUV lithography was deposited using magnetron sputtering system. The multilayers were characterized using the cross-sectional transmission electron microscope (TEM) and low/high angle X-ray diffraction (XRD). The microstructure of Mo and Si was highly textured structure and amorphous, respectively. The well-defined low angle XRD peaks implies a well-defined multilayer structure. The interfacial layer of Mo-on-Si was thicker than Si-on-Mo interfacial layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.79-79
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.69-69
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.209-209
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• 2003

The adventages of Li alloys have attracted the attention of many research groups, many of which have investigated tin-based alloys [1-2], Despite interesting performances of these, the irreversible capacity loss systematically observed on the first cycle for these compounds is a main drawback for their use as anode materials in lithium ion cells. Not only Sn is efficient in forming alloys with Li, Si can also react with Li to form alloys with a high Li/Si ratio, like Li$\_$22/Si$\_$5/ at 400$^{\circ}C$. It corresponds to a capacity of 4200mAh/g. Electrochemical Li-Si reaction occurs between 0 and 0.3 V against Li/Li$\^$+/, so that high-energy density battery can be realized. Despite the high theoretical capacity of elements like Si, however, particles of the alloys crack and fragment due to the repeated alloying and do-alloying which occurs as cell are charged and discharged. The research groups of Muggins [3] and Besenhard [4] have proposed that the volume expansion due to the insertion of Li can be reduced in micro- and submicro-structured matrix alloys. For this reason, the research group of J.R. Dahn investigated Sn/Mo sequential sputter deposition to prepare nanocomposites [5]. In this study, we investigated the characterization and the electrochemical characteristics of sequentially sputtered Si/Mo multilayer for microbattery anode.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.185-189
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• 2002

Mignetron sputter 장비를 이용하여 극자외선 노광공정용 Mo/Si 다층박막을 증착하였다. 증착 시편과 동일한 조건에서 수행된 시뮬레이션과 측정된 반사도 값을 비교하였고, d-spacing, 밀도, interface layer, 입사각 둥이 반사도에 어떠한 영향을 미치는지에 대하여 고찰하였다. 또한 측정된 반사도 그래프에 근접한 조건을 조사하였다. 이를 통하여 Mo/Si 다층박막의 반사도에 영향을 미치는 인자들과 그 영향에 대하여 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.40-45
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• 2003

Ru interfacial layer was inserted into Mo-on-Si interface to enhance the extreme ultra-violet (EUV) reflective multilayer properties. The stacking status and optical properties are analyzed using cross-sectional transmission electron microscope (TEM), and reflectometer. About 1.5% of maximum reflectivity can be acquired as predicted in optical simulation, which is thought to be originated from the diffusion inhibition property. Phase defect correctability of the multilayer can be enhanced by the insertion of Ru barrier layer.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.241-246
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• 2002

극자외선 노광공정(EUVL: Extreme Ultraviolet Lithography)은 반도체 공정에서 0.1$\mu\textrm{m}$ 이하의 해상도를 실현하기 위해 연구되고 있는 유력한 차세대 노장공정(NGL: Next Generation Lithography)이다. [1] 본 연구에서는 극자외선 노광공정에서 사용되는 반사형 다층박막 미러를 제조하기 위해서 직접 제작한 전산모사 도구를 이용하여 130~135$\AA$의 파장 영역에서 고반사도를 가지는 효율적인 다층박막의 구조인자를 예측하였으며, 그러한 구조인자를 실현하기 위해서 상온(~300K)에서 마그네트론 스퍼터링을 이용하여 다층박막을 증착하였다. 증착조건 중에서, 공정압력에 따른 다층박막 계면 성장의 질적 의존성이 나타났으며, 결과적으로는 낮은 공정압력에서 더좋은 계면특성을 가지는 다층박막이 형성되었다. 다층박막의 구성물질로 Ru, Mo, Si을 사용하였으며, 다층박막의 구조분석은 high/low angle XRD, 단면 TEM images 등을 이용하여 분석되었다.