• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.80.2-80
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• 2003

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 추계학술대회
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• pp.277-279
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• 2004

$300^{\circ}C$ 소성 Pt/MoO3가 수소를 흡착후 탈착하는 속도를 측정하였다. 두가지 흡착 속도를 나타내는 Pt/MoO3 촉매에서 탈착량은 흡착량과 탈착 온도의 증가에 비례하는 것을 알 수 있었다. 또한 X-Ray Photoelectron Spectroscope(XPS) 결과로부터 Pt와 MoO3간의 활성점에 존재하는 Cl의 존재가 수소 이동 속도를 결정하는 것으로 판단되었다.

• Bulletin of the Korean Chemical Society
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• 제18권10호
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• pp.1082-1085
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• 1997

The Near-Edge X-ray Absorption Fine Structure (NEXAFS) technique and Differential Scanning Calorimetry (DSC) were utilized to investigate the reaction of CH4 and O2 on the MoO3/SiO2 catalyst. The NEXAFS results showed that the stoichiometry of the molybdenum oxide catalyst supported on silica was MoO3. MoO3 was reduced to MoO2 when the catalyst was exposed to CH4 at 773 K. NEXAFS results confirm that lattice oxygen is directly related to the process of CH4 oxidation which takes place on the surface of MoO3/SiO2 catalysts. DSC results show that the structure of MoO3 changes around 573 K and this structural change seems to improve the migration of oxygen in the lattice.

• 한국결정성장학회지
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• 제8권2호
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• pp.233-239
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• 1998

화학기상증착법을 이용하여 tetramethylsilane(TMS)과 hexamethyldisilane(HMDS)으로부터 SiC층을 증착시켰다. 반응관 내의 압력은 1torr를 유지시켰으며, $H_2$ 가스를 사용하여 precursor를 반응로내로 수송하였고 $1200^{\circ}C$의 반응온도로 SiC 증착이 이루어졌다. 기판은 tantalum으로 masking한 Si-wafer와 platinum, molybdenum으로 masking한 MgO 단결정을 사용하였다. 금속층(Ta, Pt, Mo)에서의 SiC 증착 양상과 Si, MgO 위에서의 SiC 증착 양상을 비교함으로써 SiC 증착의 선택성을 관찰하였다. 증착층의 주된 상은 X-선 회절분석에 의해 $\beta-SiC$로 확인되었다. 또한 전자현미경 분석을 통해 각 층에서의 증착 양상의 차이를 조사하였다.

• 한국재료학회지
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• 제29권11호
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• 한국세라믹학회지
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• 제35권3호
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• pp.219-230
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• 1998

Various interlayer materials have been tested for active metal(Cusil ABA) brazing of Si3N4/S. S316 joint. In general multilayer joint had higher strength(80-150 MPa) and better reliability than monolayered one. The joint with Cu(0.2)/Mo(0.3)/Cu(0.2mm) interlayer showed the highest bending strength of abou 490 MPa and the joint with Cu(0.2)/Mo(0.3mm) interlayer the best reliability (14.6 Weibull modulus). The stresses distributed in joint materials during 4-point bending test were estimated by CAE von Mises analysis; the estimated stresses were In good agreement with the measured data. In multilayer joint Cu was though to reduce the residual stresses induced by the difference in thermal expansion coefficient between the ceramic Mo and metal It apperared that a Cu/Mo was optimum interlayer material for Si3N4/S. S316 joint with high bending strength (420 MPa) and reliability. In addition the various shapes and types of compound were examined by EPMA in joining interface.

• 한국주조공학회지
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• 제29권2호
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• pp.70-77
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• 2009

The aim of this study was to develop a Mo and V free low alloy cast steel materials, enabling the significant cost- and time-savings in manufacturing and maintaining the insert of cold pressing die without impairment of the important properties. For this purpose, the effects of Si content on combinations of important properties such as hardness, hardenability, and weldability, and strength were systematically investigated. In order to evaluate the applicability as the insert of cold pressing die, the mechanical properties were measured after spheroidization annealing, quenching and tempering, and flame hardening heat treatments, respectively. After the Q/T and F.H. treatments, the developed 0.8${\sim}$1.6%Si containing Mo and V free low alloy cast steels showed excellent matrix strengthening effect, hardenability, and weldability, fulfilling the industrial criterion of the mechanical properties for automobile cold pressing die insert.

• 공업화학
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• 제8권2호
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• pp.191-196
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• 1997

$Pt/MoO_3/SiO_2$ 촉매계에서의 $50^{\circ}C$ 등온 환원 실험에서 hydrogen spillover는 소성 온도가 증가함에 따라 더욱 빠른 속도로 진행된다. 이는 Pt 표면위에 형성되는 overlayer에 기인하는 것임을 TEM과 CO chemisorption 측정으로 알 수 있었다. 1-butene의 iso-butene으로의 골격이성질화 반응 mechanism은 carbonium ion의 형성과 methyl기의 골격 치환의 2 step으로 알려져 있다. $Pt/MoO_3/SiO_2$ 촉매계에서 약 $250^{\circ}C$에서 calcination하면 iso-butene 수율이 증가한다. 이는 $PtCl_x$ precursor 내에 존재하는 chlorine의 감소에 의한 것과 overlayer 생성에 따라 Pt 표면으로부터 $MoO_3/SiO_2$로의 hydrogen spillover의 증가에 의한 것으로 추측된다.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.557-563
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• 2003

SiC has been an useful material for the high voltage, high temperature, and high frequency devices, however, the required high process temperature to activate the implanted p-type dopants has hindered further developments. In this study, we report, for the first time, on the laser activation of implanted Al and non-alloyed Mo ohmic contacts and its application to MOSFET fabrication. The contact and sheet resistance measured from CTLM patterns have decreased by increasing laser power, and the lowest values are 3.9 $K\Omega$/$\square$ and 1.3 $\times$ 10$^{-3}$ $\Omega$-cm$^2$, respectively, at the power density of 1.45 J/cm$^2$ The n-MOSFETs fabricated on laser activated p-well exhibit well-behaved I-V characteristics and threshold voltage reduction by reverse body voltage. These results prove that the laser process for implant activation is an alternative low temperature technology applicable to SiC devices.

• 한국주조공학회지
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• 제20권4호
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• pp.240-246
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• 2000

Surface layer properties such as composition, phase, hardness, and oxide layer condition are very important if the main failure mechanism of metals is wear. Generally, stable and dense oxide layers are known to decrease the wear rate of metals by prohibition of metallic junction occurred between bare metals. Addition of Si above 4 wt% to DCI(Ductile Cast Iron) is reported to enhance the significant oxidation resistance by forming the silicon-rich surface layer which inhibits further oxidation. And addition of up to 2 wt% Mo to high Si ductile iron produces significant increases in high temperature tensile strength, creep strength, thermal fatigue resistance and oxidation resistance. High pressure wear characteristics of unalloyed DCI(Ductile cast Iron), 4.46 wt% Si ductile iron, 4.3 wt% Si-0.52 wt% Mo ductile iron were investigated through unlubricated pin-on-disc wear test. Wear test was carried out at speed of 23m/min, under pressure of 3 MPa and 3.3 MPa. Wear surfaces of each specimen were observed by SEM to determine the wear mechanism under high pressure wear condition. Addition of Si 4.46 wt% severely deteriorated wear property of ductile iron compared to unalloyed DCI. But combined addition of Si 4.3 wt%andMo0.52wt%decreasedthefrictioncoefficient(${\mu}$)ofductileironsandremarkablydelayedthemild-severeweartransition.