• Journal of the Korean Chemical Society
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• v.7 no.2
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• pp.128-132
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• 1963

A study has been made on the applicability of gas-liquid partition chromatography to the qualitative and quantitative analysis of complex mixture of gaseous hydrocarbons. While phthalate columns are widely used for this $purpose^9$, they separates neither saturated hydrocarbons from the unsaturated nor n-butane from isobutene or butene-1, therefore combined columns such as phthalate and dimethylsulfolane have been used for the perfect separation of gaseous hydrocarbons. It is shown by this study, however, that hydrocarbons having $C_1$ through $C_4$ can be separated with a 2-meters tetraethyleneglycol dimethylether column except ethane from ethylene, and trans-from cis-2-butene especially operated at $15^{\circ}C$$ using helium as the carrier gas. The column effluents were in order of methane, (ethane, ethylene), propane, propylene, isobutane, n-butane, isobutylene, butene-1, (trans-& cis-2-butene, isopentane), (butadiene-1, 3, n-pentane). Two kinds of liquified petroleum gases in market are analysed qualitatively and quantitatively. The results indicate that use of this 2-meters TEGDE column permits the separation and identification of all the commonly encountered aliphatic gaseous hydrocarbons.

• Nuclear Engineering and Technology
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• v.46 no.6
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• pp.857-862
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• 2014

Mechanical alloying under various gas atmospheres such as Ar, an Ar-$H_2$ mixture, and He gases were carried out, and its effects on the powder properties, microstructure and mechanical properties of ODS ferritic steels were investigated. Hot isostatic pressing and hot rolling processes were employed to consolidate the ODS steel plates. While the mechanical alloyed powder in He had a high oxygen concentration, a milling in Ar showed fine particle diameters with comparably low oxygen concentration. The microstructural observation revealed that low oxygen concentration contributed to the formation of fine grains and homogeneous oxide particle distribution by the Y-Ti-O complex oxides. A milling in Ar was sufficient to lower the oxygen concentration, and this led a high tensile strength and fracture elongation at a high temperature. It is concluded that the mechanical alloying atmosphere affects oxygen concentration as well as powder particle properties. This leads to a homogeneous grain and oxide particle distribution with excellent creep strength at high temperature.

• Clean Technology
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• v.18 no.2
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• pp.221-225
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• 2012

In this study, simulation works for a carbon dioxide capture process using solvent absorption method have been performed for decrease of regeneration energy in applying phase transition of liquid solvent. When carbon dioxide is dissolved in 30 wt% MEA solvent, liquid mixture divided into two phase according to mole loading of dissolved carbon dioxide. Using this phenomenon, we can decrease regeneration energy about 61% than primary absorber column-stripper column process.

• Journal of the Korean Solar Energy Society
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• v.23 no.4
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• pp.29-35
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• 2003

We studied the water splitting into $H_2$ and $O_2$ using two different semiconductor photo catalysts and redox mediator, mimicking the Z-scheme mechanism of the photosynthesis, $H_2$ evolution took place on a Pt-$SrTiO_2$ (Cr-Ta doped) photocatalyst using $I^-$ electron donor under the visible light irradiation. The Pt-$WO_3$ photocatalyst showed an excellent activity of the $O_2$ evolution using $IO_3^-$ electron acceptor under visible light. $H_2$ and $O_2$ gases evolved in the stoichiometric ratio($H_2/O_2$=2) under visible light using a mixture of the Pt-$WO_3$ and Pt-$SrTiO_3$ (Cr-Ta doped) suspended in NaI aqueous solution. We proposed a two-step photo-excitation mechanism using redox mediator under the visible irradiation.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.98-104
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• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

• Journal of the Korean Ceramic Society
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• v.29 no.10
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• pp.822-826
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• 1992

SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{\circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.55-60
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• 1999

${\beta}$-SiC thin film was deposited on a Si substrate without buffer layer using a single precursor of Hexamethyldisilane (Si2(CH3)6) by chemical vapor deposition method. HCI gas was introduced into hexamethyldisilane /H2 gas mixture, and the feeding schedule of HCI and precursor gases was modified in order to enhance the selectivity of SiC deposition between a Si substrate and a SiO2 mask. The effect of HCI gas on the surface roughness of the SiC film was investigated and typical electrical properties of the SiC film were also investigated by Hall measurement.

• Journal of the Korean Ceramic Society
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• v.20 no.4
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• pp.305-314
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• 1983

In order to enhance the rate of th nitridation and to give the high density of reaction-bonded silicon nitride MgO powder as nitriding aid were added to silicon powders and the mixture was pressed isostatically into compacts which were nitrided in the furnace of 1, 35$0^{\circ}C$ where 95% $N_2$-5% $H_2$ gases were flowing. As the other nitriding aid $Mg(NO_3)_2 6H_2O$ was selected, A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$. Magnesium oxide-coated silicon powders were formed into compacts prior to the nitridation on the same condition as the former. Magnesium nitrate (MgO, produced from the decomposition of magnesium nitrate) was more effective for the formation of the $\beta$-phase in the initial stage of the nitridation probably due to the easy formation of $MgO-SiO_2$-metal oxide eutectic melt. It has been confirmed that forsterite was formed as a result of the reaction between MgO and $SiO_2$ film of silicon surface. It was considered that MgO produced from magnesium nitrate may be finer more reactive and more uniformly distributed on the surface of silicon particles than original MgO. The higher the forming pressure was the more the $\beta$-phase was formed.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.446-450
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• 2013

TRISO coated particles with a ZrC barrier layer were fabricated by a fluidized-bed chemical vapor deposition (FBCVD) method for a use in a very high temperature gas-cooled reactor (VHTR). The ZrC layer was deposited by the reaction between $ZrCl_4$ and $CH_4$ gases at $1500^{\circ}C$ in an $Ar+H_2$ mixture gas. The amount of free carbon codeposited with in ZrC was changed by controlling the dilution gas ratio. Near-stoichiometric ZrC phase was also deposited when an impeller was employed to a $ZrCl_4$ vaporizer which effectively inhibited the agglomeration of $ZrCl_4$ powders during the deposition process. A near-stoichiometric ZrC coating layer had smooth surface while ZrC containing the free carbon had rough surface with tumulose structure. Surface roughness of ZrC increased further as the amount of free carbon increased.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.