• 제목/요약/키워드: Mixed voltage

검색결과 357건 처리시간 0.023초

EPR케이블과 시트의 잔류전압 특성 (Residual Voltage Properties of EPR Cables and Sheets)

  • 이성일;배덕권;김민호;송기태;이원재;오용철;주인규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.291-292
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    • 2008
  • This study used EPR's sheet and cable as a specimen, and measured residual voltage depending on the induced voltage, thickness of the sheet, and shape of the sheet and cable. The results of the study lead to the following conclusion: 1) The residual voltage increased in proportion to the induced voltage as time increases; 2) The residual voltage of the basic mixed specimen and practical mixed specimen increased as time increased; 3) The peak of the cable appeared earlier than that of the sheet in both of the basic mixed specimen and practical mixed specimen.

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직류와 60 Hz 교류가 중첩된 전압에 대한 산화아연 피뢰기 소자의 누설전류 특성 (Characteristics of ZnO Arrester Blocks Leakage Currents under Mixed Direct and 60 Hz Alternating Voltages)

  • 이복희;강성만;박건영
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권1호
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    • pp.23-29
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    • 2005
  • This paper presents the characteristics of leakage currents flowing through ZinC Oxide(ZnO) surge arrester blocks under mixed direct and 60 Hz alternating voltages. A mixed voltage, in which an alternating voltage is superimposed upon a direct voltage, appears on the HVDC system network. The mixed direct and alternating voltage generator with a peak open-circuit of 10 kV was designed and fabricated. The leakage currents and V-I curves for the fine and used ZnO surge arrester blocks were measured as a function of the voltage ratio k, where the voltage ratio k is defined as the ratio of the peak of alternating voltage to the peak of the mixed voltages. The resistive component in the leakage current in the low conduction region is significantly increased with increasing the voltage ratio k. The V-I characteristic curves for the mixed voltages lies between the direct and alternating characteristics, and the cross-over phenomenon in the high conduction region was appeared.

생활폐수 내 혼합균주를 이용한 미생물 연료전지의 구동 특성에 관한 연구 (A Study on the Driving Characteristics of Microbial Fuel Cell Using Mixed Strains in Domestic Wastewater)

  • 김상규;유동진
    • 한국수소및신에너지학회논문집
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    • 제32권6호
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    • pp.506-513
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    • 2021
  • The use of fossil fuels is a major contributor to the increase atmospheric greenhouse gas emissions. As such problems arise, interest in new and renewable energy devices, particularly fuel cells, is greatly increasing. In this study, various characteristics of mixed strains were observed in wastewater collected by the Jeonju Environment Office to investigate the effects of microorganisms on voltage generation and voltage generation of substrates, electrode materials, electrons, electron transport media, and ash microbial fuel cells. As a result of separately measuring the voltage generated during inoculation, the inoculation voltage of Escherichia coli K12 (E. coli K12) was 0.45 V, and the maximum inoculation voltage of the mixed strain was 1.2 V. Thereafter, voltage values were collected using a digital multimeter and the amount of voltage generated over time was measured. In the case of E. coli K12, the maximum voltage reached 0.45 V, and the cell voltage was maintained above 0.23 V for 140 hours. In contrast, for the mixed strain, the maximum voltage reached 1.2 V and the voltage was slowly decreased to 0.97 V. In addition, the degree of microbial adsorption to the electrod surface after the inoculation test was confirmed using a scanning electron microscope. Therefore, these results showed the possibility of purifying pollutants at the same time as power generation through the production of hydrogen ions using microorganisms and wastewater.

전압 전류 혼합구동방식을 적용한 동기정류기형 플라이백 DC-DC 컨버터 (A Flyback DC-DC Converter Employing a Synchronous Rectifier Driven by a New Voltage/Current Mixed Method)

  • 이달우;안태영
    • 대한전기학회논문지:전기기기및에너지변환시스템부문B
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    • 제55권9호
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    • pp.472-477
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    • 2006
  • This paper presents a new voltage/current mixed method for driving synchronous rectifiers (SR) adapted to the flyback topology. The synchronous rectifier driven by the proposed voltage/current mixed method can operate at a wide load range with high efficiency. The gate voltage of MOSFET in the synchronous rectifier can be easily controlled by changing the ratio of resistors, irrespective of a line and load fluctuation. A 200W (12V/17A) prototype converter was built and an efficiency of 93% was measured at 10A load current.

유기물이 첨가된 저밀도 폴리에칠렌에서 예비과전에 따른 트리잉 열화 (The Treeing Deterioration with Prestressed D.C Voltage in Low Density Polyethylen Mixed with Organic Compounds)

  • 채홍인;양계준;임기조
    • 한국안전학회지
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    • 제6권2호
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    • pp.15-20
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    • 1991
  • In this paper, we have investigated the effect of organic additives and prestressed D C. voltage on the impulse tree initiation in low density polyethylene. The five klnds of organic compounds was selected for the purpose of inhibiting tree initiation and 10 wt % of each additive was mixed in low density polyethylene. The positive or negative impulse voltage was applied after prestressed D.C. voltage was applied in order to investigate the effect of the space charge influenced on tree initiation. The lengths of tree initiation in case of belng same polarity between prestressed D.C. voltage and impulse voltage were longer than those in case of being different polarity between prestressed D.C. voltage and impulse voltage. When the polarity prestressed D.C. voltage was the different plarity of impulse voltage, the length of tree initiation increased with increasing the prestressed D.C. voltage and decreasing the rest time Among the organic additives used in this paper, the m-cresol can be shown to be the most effective inhibiter to tree initiation.

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Electrical breakdown properties in neon gas mixed with xenon

  • Han S. Uhm;Park, Eun H.;Guansup Cho;Ki W. Whang
    • Journal of Korean Vacuum Science & Technology
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    • 제4권4호
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    • pp.112-121
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    • 2000
  • The paper investigates electrical discharge properties in neon gas mixed with xenon. The breakdown temperature T$\sub$b/ and voltage V$\sub$b/ are obtained in terms of the gas mixture ratio X. It is shown that the breakdown voltage decreases, reaches the minimum value at X=0.02 and then increases again, as the mixture ratio X increases from zero to unity. Therefore, mixing the neon gas with a few percent of xenon is the most beneficial to reduce the breakdown voltage. Plasma density at breakdown in neon gas mixed with xenon is described in terms of the gas mixture ratio. The optimum value of mixture ratio for highest plasma density is found to be Xm=0.03. A preliminary experiment of AC-PDP is carried out for neon gas mixed with a few percent of xenon to verify some of the theoretical models. The experimental data agree qualitatively well with theoretical predictions.

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혼성 신호 회로에 대한 효과적인 BIST (An Efficient BIST for Mixed Signal Circuits)

  • 방금환;강성호
    • 대한전자공학회논문지SD
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    • 제39권8호
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    • pp.24-33
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    • 2002
  • 혼성 신호 회로의 설계에 있어 저비용의 고효율 테스트 효율을 보장하기 위해 테스트의 노력은 계속되어 왔다. 특히 테스트를 고려한 BIST(built-in-self-test)설계 방법으로 발전해가고 있는 추세인데, 회로상에서 전체적인 테스트 용이도와 분석에 있어 보다 향상된 방법으로 접근할 수 있고 이러한 시스템에 대해 분석하는데 수월하게 할 수도 있다. 이 논문에서는 효과적인 테스트를 위한 방법을 위해 DC전압과 전압 위상에 대한 BIST를 구현하는 것을 제안하였다. 즉 정상적인 회로와 고장회로에서의 동작에서 전압과 위상의 차이를 검출하는 회로를 하드웨어상으로 구성함으로써 비용과 시간 등을 효과적으로 줄이는 방법을 제안하였다. 실험 결과에서는 기존의 BIST와 비교하여 향상된 것을 나타낸다.

직류+60[Hz]교류 중첩전압에 대한 18[kV] ZnO 피뢰기의 전기적 특성 (Electrical Properties of 18[kV] ZnO Surge Arrester Stressed by the Mixed DC and 60[Hz] AC Voltages)

  • 이수봉;이승주;이복희
    • 조명전기설비학회논문지
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    • 제21권10호
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    • pp.66-72
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    • 2007
  • 이 논문은 직류+60[Hz] 교류 중첩전압에서 신품과 노후된 18[kV] 산화아연 서지피뢰기의 누설전류와 전력손실에 대하여 기술하였다. 최대 50[kV]의 직류+60[Hz] 교류를 발생시킬 수 있는 중첩전압발생장치가 설계되고 제작되었다. 피뢰기의 I-V 특성곡선은 전압중첩률 K의 함수로 측정된다. DC와 AC 전압이 중첩된 I-V, R-V 특성곡선은 순수한 직류와 교류곡선 사이에 있고 저전류 영역에서 교차현상이 나타난다. 그 결과 중첩 전압에서 직류 성분의 증가는 ZnO 피뢰기의 전체 누설전류의 저항성분의 증가를 유발한다. 또한 같은 인가전압에서 피뢰기를 통해 흐르는 누설전류는 상용전원에서 장시간 스트레스 받은 피뢰기가 신품 피뢰기에 비해서 높게 나타났다.

고속 혼성모드 집적회로를 위한 온-칩 CMOS 전류 및 전압 레퍼런스 회로 (On-Chip Full CMOS Current and Voltage References for High-Speed Mixed-Mode Circuits)

  • 조영재;배현희;지용;이승훈
    • 전자공학회논문지SC
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    • 제40권3호
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    • pp.135-144
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    • 2003
  • 본 논문에서는 고속 혼성모드 집적회로를 위한 온-칩(on-chip) CMOS 전류 및 전압 레퍼런스 회로를 제안한다. 제안하는 전류 레퍼런스 회로는 기존의 전류 레퍼런스 회로에서 부정확한 전류 값을 조정하기 위해 주로 사용되는 아날로그 보정 기법과는 달리 디지털 영역에서의 보정 기법을 사용한다. 또한, 제안하는 전압 레퍼런스 회로는 고속으로 동작하는 혼성모드 집적회로의 출력단에서 발생할 수 있는 고주파수의 잡음 성분을 최소한으로 줄이기 위해 고주파 신호 성분에 대해 작은 출력 저항을 볼 수 있는 구조의 레퍼런스 전압 구동회로를 사용한다. 이 레퍼런스 전압 구동회로는 전력 소모 및 칩 면적을 최소화하기 위해서 저 전력의 증폭기와 크기가 작은 온-칩 캐패시터를 사용하여 구현하였다. 제안하는 레퍼런스 회로는 0.18 um n-well CMOS 공정으로 설계 및 제작되었으며, 250 um x 200 um의 면적을 차지한다. 칩 제작 및 측정결과, 제안하는 전류 및 전압 레퍼런스 회로는 공급 전압 및 온도의 변화에 대해서 각각 2.59 %/V와 48 ppm/℃의 변화율을 보인다.

RF 스퍼터링법에 의한 BN박막 증착시 기판 바이어스전압의 영향에 관한 연구 (The Effect of Substrate Bias Voltage during the Formation of BN film by R. F. Sputtering Method)

  • 이은국;김도훈
    • 한국표면공학회지
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    • 제29권2호
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    • pp.93-99
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    • 1996
  • In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

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