• Geosciences Journal
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• v.22 no.6
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• pp.939-953
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• 2018

We examined the microfabrics of omphacite and garnet in foliated eclogite to determine the influence of the layered structure on seismic observations in subduction zone. The analyzed eclogite, from the Lanterman Range, northern Victoria Land, Antarctica, is characterized by layering in which the modal abundances of garnet and omphacite vary. For garnet, the low aspect ratios, similar angular distribution of long axes relative to the foliation in both layers, uniform grain size distribution, near-random crystallographic preferred orientations (CPOs), and misorientation angle distributions are indicative of passive behavior during deformation. In contrast, omphacite shows relatively high aspect ratios, a low angle between the long axes of crystals and the foliation, a wide grain-size distribution, and distinctive CPOs, suggesting dislocation creep as the main deformation mechanism. The results of fabric analyses are consistent with strain localization into omphacite or omphacite-rich layers rather than garnet or garnet-rich layers. The single-crystal seismic anisotropy of garnet is very weak ($AV_P=0.2%$, $AV_S=0.5-0.6%$), whereas that of omphacite is much stronger ($AV_P=3.7-5.9%$ and $AV_S=2.9-3.8%$). Seismic anisotropy of the omphacite-rich layers shows an increase of 329% for $AV_P$ and 146% for $AV_S$ relative to the garnet-rich layers. Our results demonstrate the importance of the layered structure in strain localization and in the development of the seismic anisotropies of subducting oceanic crust.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.647-655
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• 2019

In order to analyze the effect of hot asymmetric rolling on the microstructure and texture of aluminum alloy and to investigate the effect of the texture on the formability and plastic anisotropy of aluminum alloy, aluminum 6061 alloy is asymmetrically rolled at room temperature, $200^{\circ}C$, $350^{\circ}C$, and $500^{\circ}C$, and the results are compared with symmetrically rolled results. In the case of asymmetric rolling, the equivalent strain (${\varepsilon}_{eq}$) is greatest in the upper roll part where the rotational speed of the roll is high and increases with increasing rolling temperature. The increase rate of the mean misorientation angle with increasing temperature is larger than that during symmetrical rolling, and dynamic recrystallization occurs the most when asymmetrical rolling is performed at $500^{\circ}C$. In the case of hot symmetric rolling, the {001}<110> rotated cube orientation mainly develops, but in the case of hot asymmetric rolling, the {111}<110> orientation develops along with the {001}<100> cube orientation. The hot asymmetric rolling improves the formability (${\bar{r}}$) of the aluminum 6061 alloy to 0.9 and reduces the plastic anisotropy (${\Delta}r$) to near zero due to the {111}<110> shear orientation that develops by asymmetric rolling.

• Transactions of Materials Processing
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• v.27 no.6
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• pp.347-355
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• 2018

This study investigated the effects of the processing number of multi-axial diagonal forging (MADF) on the microstructural changes of OFC fabricated by MADF processes. The as-extruded OFC was cut to $25mm^3$ cube for the MADF processes. The MADF process consists of plane forging with a thickness reduction of 30% and diagonal forging with a diagonal forging angle of $135^{\circ}$. In order to analyze the microstructural evolutions according to the number of repetitions, 1, 2, 3 and 4 cycles of the MADF process were performed. OFC specimens were successfully deformed without surface cracking for up to 4 cycles of MADF. The grain size, average misorientation and average grain orientation spread (GOS) of MADF processed materials were analyzed using EBSD technique and their Vicker's hardness were also measured. The results showed that MADF process effectively refined the microstructure of OFC with initial average grain size of $84.2{\mu}m$. The average grain sizes of specimens MADF processed for 1, 2, 3, 4 cycles were refined to be $8.5{\mu}m$, $2.2{\mu}m$, $1.5{\mu}m$, $1.1{\mu}m$, respectively. The grain refinement seemed to be saturated when OFC was MADF processed over 2 cycles. In the case of specimens subjected to two or more cycles of MADF, the degree of decrease in average grain size was drastically reduced as the number of cycles increased due to softening phenomena such as dynamic recovery or dynamic recrystallization during processing. The degree of increase in average Vicker's hardness was also dramatically reduced as the number of cycles increased due to the same reason.

• Transactions of Materials Processing
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• v.28 no.2
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• pp.63-70
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• 2019

This study investigates the effects of multi-axial diagonal forging (MADF) processing number on the microstructures of AA1100 fabricated using MADF processes. The cast AA1100 was annealed at $400^{\circ}C$ for 3hrs in $N_2$ atmosphere and cut into $25mm^3$ cubes for the MADF processes. The MADF process consist of plane forging with a thickness reduction of 30% and a diagonal forging with a diagonal forging angle of 135 degrees. In order to analyze the microstructural variations based on the number of repetitions, 1, 2, 3 and 4 cycles of the MADF process were performed. AA1100 specimens were successfully deformed without cracking of the surface for up to 4 cycles of MADF. The grain size, average misorientation and average grain orientation spread (GOS) of MADF processed materials were analyzed using EBSD technique. The results showed that MADF process effectively refined the microstructure of AA1100 with an initial average grain size of $337.4{\mu}m$. The average grain sizes of specimens which were MADF processed for 2, 3, 4 cycles were refined to be $1.9{\mu}m$, $1.6{\mu}m$, $1.4{\mu}m$, respectively. The grain refinement appeared saturated when AA1100 got MADF processed over 2 cycles. When the specimen was subjected to two or more cycles of MADF, the degree of decrease in the average grain size drastically decreased with an increase in the number of cycle due to the softening phenomena such as dynamic recovery or dynamic recrystallization during processing.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.931-937
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• 2012

The microstructure of Cu-15 wt%Ag composites fabricated by equal channel angular pressing (ECAP) with intermediate heat treatment at $320^{\circ}C$ was investigated by transmission electron microscopy (TEM) observations. Ag precipitates with a thickness of 20-40 nm were observed in the eutectic region of the Cu-15 wt%Ag composite solution treated at $700^{\circ}C$ before ECAP. The Cu matrix and Ag precipitates had a cube on cube orientation relationship. ECAPed composites exhibited ultrafine-grained microstructures with the shape and distribution dependent on the processing routes. For route A in which the sample was pressed without rotation between each pass, the Cu and Ag grains were elongated along the shear direction and many micro-twins were observed in elongated Cu grains as well as in Ag filaments. The steps were observed on coherent twin boundaries in Cu grains. For route Bc in which the sample was rotated by 90 degrees after each pass, a subgrain structure with misorientation of 2-4 degree by fragmentation of the large Cu grains were observed. For route C in which the sample was rotated by 180 degrees after each pass, the microstructure was similar to that of the route A sample. However, the thickness of the elongated grains along the shear direction was wider than that of the route A sample and the twin density was lower than the route A sample. It was found that more microtwins were formed in ECAPed Cu-15 wt%Ag than in the drawn sample. Grain boundaries were observed in relatively thick and long Ag filaments in Cu-15 wt%Ag ECAPed by route C, indicating the multi-crystalline nature of Ag filaments.

• Nuclear Engineering and Technology
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• v.54 no.6
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• pp.1972-1981
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• 2022

A typical ferritic/martensitic (F/M) steel sheet was subjected to pulsed laser surface remelting (LSR) and corrosion test in lead-bismuth eutectic (LBE) at 550 ℃. There present two modification zones with distinct microstructures in the LSRed specimen: (1) remelted zone (RZ) consisting of both bulk δ-ferrite grains and martensitic plates and (2) heat-affected zone (HAZ) below the RZ, mainly composed of martensitic plates and high-density precipitates. Martensitic transformation occurs in both the RZ and the HAZ with the Kurdjumov-Sachs and Nishiyama-Wassermann orientation relationships followed concurrently, resulting in scattered orientations and specific misorientation characteristics. Hardnesses of the RZ and the HAZ are 364 ± 7 HV and 451 ± 15 HV, respectively, considerably higher than that of the matrix (267 ± 3 HV). In oxygen-saturated and oxygen-depleted LBE, thicknesses of oxide layers developed on both the as-received and the LSRed specimens increase with prolonging corrosion time (oxide layers always thinner under the oxygen-depleted condition). The corrosion resistance of the LSRed F/M steel in oxygen-saturated LBE is improved, which can be attributed to the grain-refinement accelerated formation of dense Fe-Cr spinel. In oxygen-depleted LBE, the growth of oxide layers is very low with both types of specimens showing similar corrosion resistance.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.50-58
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• 2002

The growth of GaN films on Si substrate has many advantages in that Si is less expensive than sapphire substrate and that integration of GaN-based devices with Si substrate is easier The difference of lattice constant and thermal expansion coefficient between GaN and Si is larger than those between GaN and sapphire. However, which results in many defects into the grown GaN. In order to obtain high duality GaN films on Si substrate, we need to reduce defects using the buffer layer such as AlN. In this study, we prepared three types of AlN buffer layer with various crystallinity on Si (111) substrate using MOCVD, Sputtering and MOMBE methods. GaN was grown by MOCVD on three types of AlN/Si substrate. Using TEM and XRD, we carried out comparative investigation of growth and properties of GaN deposited on the various AlN buffers by characterizing lattice coherency, crystallinity, growth orientation and defects formed (voids, stacking faults, dislocations, etc). It is found that the crystallinity of AlN buffer layer has strong effects on growth of GaN. The AlN buffer layers grown by MOCVD and MOMBE showed the reduction of out-of-plane misorientation of GaN at the initial growth stage.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.11
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• pp.1011-1020
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• 2017

This study was conducted to investigate the material properties of stainless steel 316L specimens of untreated and UNSM treated material, hydrogen attacked material(100 bar, $300^{\circ}C$ at 120 h) and UNSM treated hydrogen attacked material at room temperature. Results demonstrated that the hydrogen attacked materials showed a tendency toward a slightly decreased fatigue strength, while the hydrogen embrittlement effect was smaller than the S-N curve of conventional untreated material. As compared to untreated material, the fatigue limit of the UNSM treated material increased by 43.8%, while it was 57.1％ higher in the UNSM treated hydrogen attacked material than in untreated hydrogen attacked material. The plastic deformation layer was ${\sim}152{\mu}m$ thick, as confirmed by maps showing the level of local plastic deformation affected by the UNSM treatment in three ways: an image quality map, inverse pole figure map, and kernel average misorientation map captured via electron back scatter diffraction. Owing to hydrogen embrittlement, about 90％ of surface cracks were smaller than the average grain size of $35{\mu}m$.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.165-172
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• 1998

Epitaxial ultrathin films of $CoSi_2$ and double heteroepitaxial structure of Si/$CoSi_2$/Si(lll) were prepared on Si(111)-$7\times{7}$ substrate by in situ solid-phase epitaxy in a ultrahigh vacuum(LHV). The phase, chemical composition, crystallinity, and the microsructure of the Si/$CoSi_2$/Si(lll) interface were investigated by 2-MeV $^4He^{++}$ ion backscattering spectrometry, X-ray diffraction, and high-resolution transmission electron microscopy. The growth mode of the Co film was the Stransky-Krastanov type with texture when the substrate temperature was room temperature. A-type $CoSi_2$ ultrathin film was grown by deposition of about 50A Co on Si(ll1)-$7\times{7}$ substrate followed by in situ annealing at $700^{\circ}C$ for 10 min. The matching face relationships were $CoSi_2$[110]//Si[110] and $CoSi_2$(002)//Si(002) with no misorientation angle. The A-type $CoSi_2$/Si(lll) interface was abrupt and coherent. The best epi-Si/epi-$CoSi_2$2(A-type)/Si(lll) structure was obtained by deposition of Si film on the CoSii at $500^{\circ}C$ followed by in situ annealing at $700^{\circ}C$ for 10 min in UHV.