• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.207-211
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• 1999

$Si/Si_{1-x}Ge_x$ MODFET structures, incorporating linearly-graded buffer layers have been grown by GaS Source Molecular Beam Epitaxy. The growth temperature of the graded layers has not significantly changed the distribution of misfit dislocation. However, the surface undulation and surface defects were increased with increasing growth temperature. In $Si/Si_{1-x}Ge_x$ MODFET structures, the densities of misfit dislocations near the Si-active layers were considerably reduced in comparison with the region of graded layers. The electron mobility of $Si/Si_{1-x}Ge_x$ MODFET structure has increased with lowering the growth temperature.

• Physical Therapy Korea
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• v.18 no.2
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• pp.35-42
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• 2011

Three hundred and fourteen low back pain patients completed the Korean version of the Oswestry Disability Questionnaire (KODQ) and the Rasch analysis was then applied to identify the inappropriate items and to determine ODQ item difficulties according to a subject's characteristics. For women and youths, the 'sex life' item showed misfit statistics, whereas for older subjects it was the 'pain intensity' and 'standing' items. Also, in the acute low back group the 'pain intensity', 'standing' and 'sex life' items showed misfit statistics. For all subjects, the most difficult item was 'pain intensity', whereas the easiest item was 'walking'. But for the older and acute groups 'lifting' was the most difficult item and for those who have a visual analogue scale score of 3 or less 'sitting' was the most difficult item. These results show that differential item functioning is present in several items according to sex, age, acute and chronic pain, and VAS score. This study may be useful for adjusting the KODQ item difficulties for low back pain patients with different characteristics.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.42-48
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• 1993

Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.

• Advances in nano research
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• v.5 no.4
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• pp.303-311
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• 2017

The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs-nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ${\varepsilon}^*=0.039$ the sign of critical energy and volume is changed. We assume that at ${\varepsilon}={\varepsilon}^*$ the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (${\varepsilon}$ < ${\varepsilon}^*$), the bulk nucleation mechanism dominates. However, at ${\varepsilon}$ > ${\varepsilon}^*$, when the energy barrier becomes negative as well as a larger misfit provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for $Ga_{1-x-y}In_xAl_yN$ quasiternary system was calculated and studied and its 3D sketch was plotted.

• Composites Research
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• v.22 no.3
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• pp.9-17
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• 2009

Nanoindentation behaviours on the films of softer Ag film/harder Cu substrate structure were studied by the molecular dynamics method. As a result, it was shown that the stiffness and hardness of films were strongly dependent on the thickness of films. The stiffness and hardness increased with the thickness of film within a critical range as an inverse Hall-Petch relation. The stiffness and hardness of Cu substrate with Ag film less than 5 nm were observed to be lower than those of bulk silver. In particular, the flower-like dislocation loop was created on the interface by the interaction between dislocation pile-up and misfit dislocation during the indentation of Ag film/Cu substrate with film thickness less than 4 nm, which seemed to be associated with the drop of load in the indentation load versus displacement curve.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.1-10
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• 1999

InGaP epilayers were grown on the flat, $2^{\circ}$off, $6^{\circ}$ off, and $10^{\circ}$off GaAs substrates by organo-metallic vapor phase epitaxy, and influences of crystallographic misorientation of the substrate on the structural and optical properties such as lattice mismatch, elastic strain, lattice curvature, misfit stress, and PL intensity /line-width were investigated in this study. Material characterizations were carried out by TXRD( tripple-axis x-ray diffractometer) and low temperature (11K) PL (photoluminescence). With increase of the substrate misorientation angle (S.M.A.), the relative incorporation of Ga atoms on the substrate surface was found to be enhanced. Also, with increase of the S. M. A., the x-ray line-width of the InGaP epilayer was reduced, indicating that the crystal quality of the epilayer could be improved tilth a misoriented substrate. It was also found that the elastic accommodation of the strain-free lattice misfit was more remarkable in a misoriented sample. PL intensity increased, and PL line-width and emission wavelength decreased with the increase of S. M. A. The results conclude that the elastic characteristics and the crystal quality of the InGaP epilayer could be remarkably enhanced when the misoriented substrates were employed.

• Journal of Dental Rehabilitation and Applied Science
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• v.26 no.1
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• pp.39-46
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• 2010

To assess the stress distribution of implant prosthesis induced by intentional misfit using photoelastic model. Stress was measured at the surrounding bone after applying vertical load to the implant. Three implants were placed in each of three photoelastic resin blocks. No misfits were used for the control group, while for the experimental group $100{\mu}m$ misfit after cutting the crown was used. The photoelastic stress analysis was performed. In control group, stress concentration was not shown when the load was not applied, whereas stress concentration was shown only in the loaded part even when load was applied and the stress was distributed in anterior-posterior direction when applying a load in the middle. When intentional misfits were given, stress around the fixture was incurred when tightening the screw even if load was not applied. If the load was applied, stress was concentrated around the implants including areas where the load was applied. In particular, the prosthesis made of UCLA showed more stress concentration as compared with a conical abutment. In the UCLA case, concentration was shown from the apex following through the axis to the cervical area. Prosthesis with misfit makes the stress concentrated though the load was not applied and it induces even more severe stress concentration when the load was applied. This founding demonstrates the importance of the correct prosthesis production.

• Information Systems Review
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• v.4 no.2
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• pp.257-272
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• 2002

For the successful implementation of ERP systems, it is very important to solve the issue of "misfits", that is, the gaps between the functionality offered by the ERP package and the required by the adopting organization. To solve the "misfit" issue, adapting to the new functionality has been recommended instead of customizing the ERP package. However, these claims are mostly based on case studies and anecdotal evidence with limited empirical justification. The purpose of this study is, therefore, to study the effect of ERP customizing on user satisfaction and firm performance. In this study, we also examine the differences in the effects of ERP customizing among three customizing types: modification, add-on development (to use 'user exit'), and add-on development (not to use 'user exit'). According to the empirical field study, we find no significant differences in user satisfaction and firm performance by overall customizing (total of three customizing types) level. However, we find significant differences in user satisfaction and firm performance by add-on development level. And the influences of customizing types on user satisfaction and firm performance are significantly affected by the functionality level offered by the ERP system and BPR level. These results indicate that ERP customizing may not always be the incorrect choice for solving the "misfit" issue.

• 한국전자현미경학회:학술대회논문집
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• 2002.05a
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• pp.57-60
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• 2002