• Title/Summary/Keyword: Millimeter-Wave Application

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V-band CPW receiver chip set using GaAs PHEMT (GaAs PHEMT를 이용한 V-band CPW receiver chip set 설계 및 제작)

  • W. Y. Uhm;T. S. Kang;D. An;Lee, B. H.;Y. S. Chae;Park, H. M.;J. K. Rhee
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2002.11a
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    • pp.69-73
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    • 2002
  • We have designed and fabricated a low-cost, V-band CPW receiver chip set using GaAs PHEMT technology for the application of millimeter-wave wireless communication systems. Low noise amplifiers and down-converters were developed for this chip set. The fabricated low noise amplifier showed an S$\sub$21/ gain of 14.9 ㏈ at 60 ㎓ and a noise figure of 4.1 ㏈ at 52 ㎓. The down-converter exhibited a high conversion gain of 2 ㏈ at the low LO Power of 0 ㏈m. This work demonstrates that the GaAs PHEMT technology is a viable low-cost solution for V-band applications.

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Design and Fabrication of Low LO Power V-band CPW Mixer Module

  • Dan An;Lee, Bok-Hyung;Chae, Yeon-Sik;Park, Hyun-Chang;Park, Hyung-Moo;Chun, Young-Hoon;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.1133-1136
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    • 2002
  • We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

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RF Small-Signal Frequency Simulations for the Design of Millimeter-wave Application Systems (밀리미터파 응용 시스템 설계를 위한 RF 소신호 주파수 특성 시뮬레이션)

  • Son, Myung-Sik
    • Journal of the Institute of Convergence Signal Processing
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    • v.12 no.3
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    • pp.217-221
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    • 2011
  • GaAs-based and InP-based HEMTs(High Electron Mobility Transistors) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. GaAs-based MHEMTs(Metamorphic HEMTs) have some advantages, especially for cost, compared with InP-based ones. In this paper, the RF small-signal circuits of MHEMTs are simulated and analyzed for the design of millimeter-wave application systems. The simulation analysis for RF small-signal frequency can help and give some insights about the MHEMTs for the design of millimeter-wave application and communication systems.

Image Measurement and Processing using Near-Range Passive Millimeter-wave Imaging System (근거리 수동 밀리미터파 이미징 시스템을 이용한 영상 측정과 영상처리)

  • Jung, Kyung Kwon;Yoon, Jin-Seob;Chae, Yeon-Sik
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.8
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    • pp.159-165
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    • 2015
  • In this paper, we designed and tested of the passive millimeter-wave imaging system in near range. The proposed passive millimeter-wave imaging system consists two parts. The first part is a 94 GHz band millimeter imaging sensor which is coupled to an antenna, two LNAs, and a diode detector. The second part is a control unit. The control unit is consists of the 2-axes Cartesian robot, the data acquisition (DAQ), and imaging program. The 2-axes Cartesian robot should be able to scan a 2-D image of the metalic tools, IC card and plastic objects, with a raster scanning method. The passive millimeter-wave image of $20{\times}20$ pixels is acquired within less than 60s, and is immediately displayed and stored for post processing.In order to improve the image quality, interpolation methods are applied.

Design and fabrication of the MMIC frequency doubler for 29 GHz local oscillator application (29GHz 국부 발진 신호용 MMIC 주파수 체배기의 설계 및 제작)

  • Kim, Jin-Sung;Lee, Seong-Dae;Lee, Bok-Hyoung;Kim, Sung-Chan;Sul, Woo-Suk;Lim, Byeong-Ok;Kim, Sam-Dong;Park, Hyun-Chang;Park, Hyung-Moo;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.38 no.11
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    • pp.63-70
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    • 2001
  • We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.

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A SIW Fed Antipodal Linear Tapered Slot Planar Multi-Beam Antenna for Millimeter-Wave Application

  • Zhang, Yingsong;Hong, Wei;Kuai, Zhenqi
    • Journal of electromagnetic engineering and science
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    • v.10 no.3
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    • pp.175-178
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    • 2010
  • In this paper, a millimeter-wave multi-beam antenna is studied by rotating the antipodal linear tapered slot antenna(ALTSA) with respect to a center is successfully designed. In order to lowering the SLL and enhancing the isolation between the ALTSA elements, a row of metallic via is inserted between the ALTSAs. A 9 beams antenna is designed and experimented at Ka band. The measured and simulated results agree well with each other. The antenna can provide horizontal wide angle coverage up to ${\pm}62^{\circ}$. The gain of each beam can achieve about 12.5 dB. The mutual coupling between ports is all below 20 dB.

Development of Schottky Diode for THz Applications using Heterogeneous Resist Patterning (이종 레지스트 패터닝을 이용한 테라헤르츠용 쇼트키 다이오드 개발)

  • Han, Min;Choi, Seok-Gyu;Lee, Sang-Jin;Baek, Tae-Jong;Ko, Dong-Sik;Kim, Jung-Il;Kim, Geun-Ju;Jeon, Seok-Gy;Yoon, Jin-Seob;Rhee, Jin-Koo
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.8
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    • pp.47-54
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    • 2012
  • In this paper, we have fabricated the Schottky diode for THz applications by heterogeneous resist patterning method. The Schottky diode was developed using electron beam lithography and photolithography to connect the anode and the anode pad for a simple process. The measured performance of developed Schottky diode are $11.2{\Omega}$ of series resistance, 25.96 fF of junction capacitance, 1.25 of ideality factor and 547.6 GHz of cut-off frequency.

A Millimeter-Wave LC Cross-Coupled VCO for 60 GHz WP AN Application in a 0.13-μm Si RF CMOS Technology

  • Kim, Nam-Hyung;Lee, Seung-Yong;Rieh, Jae-Sung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.295-301
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    • 2008
  • Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

Preliminary Simulation on Spaceborne Sparse Array Millimeter Wave Radar for GMTI

  • Kang, Xueyan;Zhang, Yunhua
    • Journal of electromagnetic engineering and science
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    • v.10 no.4
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    • pp.322-327
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    • 2010
  • Spaceborne sparse array radar for ground moving targets indication (GMTI) has outstanding advantage over full array radar for constructing ultra-large aperture. Rapid development of millimeter wave (MMW) technology make it possible for realizing MMW GMTI radar, which is much more sensitive to slow moving ground target. The paper presented the system model of a multi-carrier frequency sparse array MMW radar as well as preliminary simulation results, which showed future application of the system is very promising.

Combined Hybrid Beamforming and Spatial Multiplexing for Millimeter-Wave Massive MIMO Systems (밀리미터파 Massive MIMO 시스템을 위한 공간 다중화 및 하이브리드 빔 형성)

  • Ju, Sang-Lim;Lee, Byung-Jin;Kim, Nam-Il;Kim, Kyung-Seok
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.5
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    • pp.123-129
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    • 2018
  • Recently, as required wireless communication traffic increase, millimeter wave mobile technologies that can secure broadband spectrum are gaining attention. However, the path loss is high in the millimeter wave channel. Massive MIMO system is being researched in which can complement the path loss by beamforming by equiped large-scale antenna at the base station. While legacy beamforming techniques have analog and digital methods, practical difficulties exist for application to massive MIMO systems in terms of system complexity and cost. Therefore, this paper studies a hybrid beamforming scheme for massive MIMO system in the millimeter wave band. Also this paper considers spatial multiplexing scheme to serve multi-users with multiple received antennas. Gains of the beamforming and the spatial multiplexing schemes are evaluated by analyzing the spectral efficiency.