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RF Small-Signal Frequency Simulations for the Design of Millimeter-wave Application Systems  

Son, Myung-Sik (순천대학교)
Publication Information
Journal of the Institute of Convergence Signal Processing / v.12, no.3, 2011 , pp. 217-221 More about this Journal
Abstract
GaAs-based and InP-based HEMTs(High Electron Mobility Transistors) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. GaAs-based MHEMTs(Metamorphic HEMTs) have some advantages, especially for cost, compared with InP-based ones. In this paper, the RF small-signal circuits of MHEMTs are simulated and analyzed for the design of millimeter-wave application systems. The simulation analysis for RF small-signal frequency can help and give some insights about the MHEMTs for the design of millimeter-wave application and communication systems.
Keywords
Millimeter wave; Communication system; RF; Small-signal circuit; Cutoff frequency; Maximum oscillation frequency; MHEMT;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
연도 인용수 순위
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