• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.249-252
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• 2003

The microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3TiO_2$ ceramics were investigated. All samples were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by X-ray Diffractor meter. According to. the X-ray diffraction patterns of the $0.7Mg_4Ta_2O_9-0.3TiO_2$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ were appeared. In the case of $0.7Mg_4Ta_2O_9-0.3TiO_2$ ceramics sintered at $1400^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 11.72, 126,419GHz, $-31.82ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.342-343
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• 2005

In this study,. the microwave dielectric properties of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics with sintering temperature were investigated for LTCC application. According to the X-ray diffraction patterns, the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics had columbite structure of the $TiTe_3O_8$ phase and scheelite structure of the $CaWO_4$ phase. Increasing the sintering temperature, the bulk density, the dielectric constant and the quality factor of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics were increased. In the case of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics sintered at $810^{\circ}C$, the bulk density, the dielectric constant and the quality factor were 5.72$g/cm^2$, 33.6, 22,013GHz respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.268-269
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• 2007

In this study, the structural and microwave dielectric properties of the $Sr_5Nb_4O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Sr_5Nb_4O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1350^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Sr_5Nb_4O_{15}$ ceramics were increased with increasing sintering temperature. In the case of the $Sr_5Nb_4O_{15}$ ceramics sintered at $1500^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 22.35, 16,577GHz, +13.40ppm/$^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.18 no.2
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• pp.107-111
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• 2008

[ $BaO{\cdot}Nd_2O_3{\cdot}5TiO_2$ ] (BNT) ceramics modified with a borate glass containing Ba, Nd and Ti as glass constituents were investigated with regard to their sintering behavior and microwave dielectric properties. An addition of iso-component glass significantly improved the sinterabilty of the BNT ceramics and lowered the sintering temperature. A maximum density of $5.29\;g/cm^3$ and an x-y shrinkage of 17% were obtained for BNT ceramics containing 10wt.% of the glass sintered at $1100^{\circ}C$. The dielectric composition without the glass additive was only slightly densified at $1100^{\circ}C$. The resulting sample exhibited two crystalline phases, $BaNd_2Ti_5O_{14}$ and $Ba_2Ti_9O_{20}$, regardless of sintering temperature and glass content. When >10wt.% glass was added, exaggerated grain growth with a less uniform microstructure was found, resulting in the subsequent reduction of the fired density and the dielectric properties. BNT ceramics containing 10wt.% of the isocomponent glass sintered at $1100^{\circ}C$ for 4 h showed promising dielectric properties of k = 71.3 and Q = 1,330.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.308-313
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• 2001

We report the effects of the V$_2$O$_{5}$ additive on the sintering behavior and microwave dielectric properties of ZnNb$_2$O$_{6}$ ceramics. Densification temperatures of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are lowered to the range of 875-9$25^{\circ}C$ because of the liquid phase sintering. Doped samples are composed of a Zn(Nb,V)$_2$O$_{6}$ solid solution and second phases. Up to 5 wt% V$_2$O$_{5}$ is the only second phase, however, V$_2$O$_{5}$ also exists as the second phase for 10 wt% V$_2$O$_{5}$ addition. In comparison with reported values of undoped ZnNb$_2$O$_{6}$ ceramics, microwave properties of V$_2$O$_{5}$-doped ZnNb$_2$O$_{6}$ samples are seriously degraded, which is confirmed to originate from the second phases. The optimum microwave properties (Q$\times$f=13,800, $\varepsilon$$_{r}$=23, $\tau$$_{f}$=-66ppm/$^{\circ}C$) are obtained from ZnNb$_2$O$_{6}$ with the addition of 5 wt% V$_2$O$_{5}$ sintered at 90$0^{\circ}C$.90$0^{\circ}C$.EX>.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.442-446
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• 2007

Microwave dielectric properties of $0.85CaWO_4-0.15LnNbO_4$ (Ln = La, Sm) ceramics were investigated as a function of the sintering temperature and $Li_2WO_4$ content from 0.8 wt.% to 1.5 wt.%. A single phase with tetragonal scheelite structure was obtained at a given composition ranges. For the specimens with $Li_2WO_4$, the sintering temperature could be effectively reduced from $1150^{\circ}C$ to $900^{\circ}C$ due to the enhancement of sinterability. Dielectric constant (K) of the specimens with $LaNbO_4$ and $SmNbO_4$ was increased with the increase of sintering temperature and/or $Li_2WO_4$ content. However, K of the specimens with $LaNbO_4$ was higher than that of $SmNbO_4$ due to the larger dielectric polarizability $(\alpha)$ of $LaNbO_4$ ($18.08{\AA}$) than that of $SmNbO_4$ ($16.75{\AA}$). With an increase of $Li_2WO_4$ content, Qf value of the specimens with $SmNbO_4$ was decreased, while that of the specimens with $LaNbO_4$ was increased. Temperature coefficient of resonant frequency (TCF) was increased with the increase of $Li_2WO_4$ content.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.752-754
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• 1998

$Ba(Mg_{(1-x)}Co_x)_{1/3}(Ta_{(1-x)}Nb_x)_{2/3}O_3$ ($x=0.3{\sim}0.6$) ceramics were prepared by the conventional mixed oxide method. The sintering temperature and time were of $1400{\sim}1575[^{\circ}C]$,5[hr.] respectively. The structural and microwave dielectric Properties were investigated with composition ratio and sintering temperature. And then the application for the microwave dielectric resonator was investigated.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.475-476
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• 2006

Using microwave synthesized HAp nano powder and polymethyl methacrylate (PMMA) as a pore-forming agent, the porous biphasic calcium phosphate (BCP) ceramics were fabricated depending on the sintering temperature. The synthesized HAp powders was about 70-90 nm in diameter. In the porous sintered bodies, the pores having $150-180\;{\mu}m$ were homogeneously dispersed in the BCP matrix. Some amounts of pores interconnected due the necking of PMMA powders which will increase the osteoconductivity and ingrowth of bone-tissues while using as a bone substrate. As the sintering temperature increased, the relative density increased and showed the maximum value of 79.6%. From the SBF experiment, the maximum resorption of $Ca^{2+}$ ion was observed in the sample sintered at $1000^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.360-364
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• 2003

Effects of sintering time upon the structures and microwave dielectric characteristics of co-substituted $Ba_{6-3x}$/S $m_{8+}$2x/ $Ti_{18}$ $O_{54}$ ceramics (x=2/3) were investigated. Prolonged sintering had significant effects upon the qf value and temperature coefficient, and a high Qf value (10,600 GHz) was obtained in the present ceramics combined with high-$\varepsilon$ (80) and near-zero temperature coefficient.t..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.11-14
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• 1993

$BaO-TiO_2$ ceramics ($BaO:TiO_2$=18.2:81.8[mol.%]) were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. Increasing the sintering temperature, the sintered density was decreased. At the sintering temperature of 1400$[^{\circ}C]$, dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 35.03, 5690, -4.433$[ppm/^{\circ}C]$, respectively. Increasing the annealing time, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was decreased.