• Title/Summary/Keyword: Microwave sintering

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Microwave Dielectric Properties of (1-X)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) Ceramics with Sintering Temperature (소결온도에 따른 (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) 세라믹스의 마이크로파 유전특성)

  • 김재식;최의선;이문기;이영희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.67-72
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    • 2004
  • The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=+450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.

The Effect of Sintering Atmosphere on the Microwave Dielectric Properties of $(1-x)CaTiO_3-xLaAlO_3$ System (소결 분위기가 $(1-x)CaTiO_3-xLaAlO_3$계의 마이크로파 유전특성에 미치는 영향)

  • 여동훈;김현재;문종하
    • Journal of the Korean Ceramic Society
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    • v.34 no.5
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    • pp.505-511
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    • 1997
  • The effects of sintering atmospheres(air, O2, N2) on the sintering and microwave dielectric properties of (1-x)CaTiO3-xLaAlO3 system was investigated. The sintered density of (1-x)CaTiO3-xLaAlO3 under air atmosphere increased linearly with increasing x, but it decreased in the range of x>0.5 under O2 atmosphere and x>0.6 under N2 atmosphere in spite of the increament of the smaller La(1.06$\AA$) and Al(0.5 $\AA$) ion than Ca(0.99$\AA$) and Ti(0.6$\AA$). In case of the air sintering atmosphere of (1-x)CaTiO3-xLaAlO3 the two phases of orthorhombic and rhombohedral crystal system were coexisting, and the XRD peak of rhombohedral crystalsystem was to be higher with increasing x. However, the sintering atmosphere of O2 and N2 made the monophasic crystal system of orthorhombic keep up by x=0.5 and x=0.6, respectively, and it transformed to pseudo-cubic crystal system in x>0.5 and x>0.6. The XRD peak intensity of (1-x)CaTiO3-xLaAlO3 was to be gradually higher with increasing x under the air atmosphere of sintering. Whereas, its XRD peak intensity increased till x=0.6 but decreased with increasing x in the range of x>0.6 under O2 and N2 atmosphere. The relative dielectric constant of (1-x)CaTiO3-xLaAlO3 sintered under air atmosphere decreased linearly and the Q.f0 value increased according as x increased. On the other hand, the relative dielectric constant of (1-x)CaTiO3-xLaAlO3 under O2 and N2 atmosphere decreased in the range of x$\leq$0.5 with increasing x, but increased rapidly in the range of x$\geq$0.6. And the Q.f0 value increased till x=0.6 but decreased in the range of x>0.6 with increasing x. The temperature coefficient of resonant frequency had no relation to sintering atmosphere.

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Microwave Sintering of Silver Thick Film on Glass Substrate (유리기판 위에 Ag 후막의 마이크로웨이브 소결)

  • Hwang, Seong-Jin;Veronesi, Paolo;Leonelli, Cristina;Kim, Hyung-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.22-22
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    • 2009
  • The silver thick film has been used in many industries such as display, chip, solar cell, automobile, and decoration with conventional heating. The silver thick film is fired with optimal time and temperature. However, decreasing the fabrication time is required due to high production power. Furthermore, there is a problem that silver in electrode is diffused throughout any substrates. For inhibiting the Ag diffusion and long fabrication time we considered a microwave heating. We investigated firing of silver thick film with conventional and microwave heating. The temperature of substrate was measured by thermal paper and the temperature of substrate was under $100\;^{\circ}C$ The shrinkage of electrode was measured with optical microscopy and optical profilometry. The shrinkage of electrode heat treated with microwave for 5min was similar to the that fired by the conventional heating for several hours. After firing by two types of heating, the diffusion of silver was determined using a optical microscope. The microstructure of sintered silver thick film was observed by SEM. Based on our results, the microwave heating should be a candidate heating source for the fabrication electronic devices in terms of saving the tact time and preventing the contamination of substrate.

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The Influence of Microwave Sintering Process on the Adaptation of CAD/CAM Zirconia Core (마이크로 웨이브 소결 과정이 CAD/CAM 지르코니아 코아의 적합도에 미치는 영향)

  • Kim, Keun Bae;Kim, Jee Hwan;Lee, Keun-Woo
    • Journal of Dental Rehabilitation and Applied Science
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    • v.25 no.2
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    • pp.95-107
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    • 2009
  • The purpose of this research was to examine the fitness of zirconia cores that were made by different sintering methods; generic electricity furnace and microwave furnace. Firstly, 12 cores for each group were made by using each different sintering process and attached them to a metal die with silicon. The internal and marginal gap of sintered zirconia was measured by using Skyscan 1076 micro-CT, then it was reorganized by CT-An software. To each samples, we extracted B-L image, M-D image of cutting side, and cross-sectional side of tooth long axis and calculated the mean value of marginal, axial, and occlusal gap each side. Results: 1. The mean marginal gap of sintered zirconia was $36.20{\mu}m$ for EVE, $47.67{\mu}m$ for LAV, $52.47{\mu}m$ for DEN, and $54.63{\mu}m$ for CER. 2. For the axial wall, the research showed the largest value of $63.49{\mu}m$ for EVE, but there were no statistical significance. 3. In related to the occlusal internal measurement, DEN showed the smallest value ($77.06{\mu}m$), EVE and CER showed significantly high value. From this study, it is suggested that CAD/CAM zirconia core which was made in the process of microwave sintering has clinically acceptable values in marginal and internal gap.

Effect of Sintering Additives and Annealing Atmospheres on the Microwave Dielectric and Sintering Characteristics of $(1-x)CaTiO_3-xLaAlO_3$ System (소결조제와 열처리 분위기가 $(1-x)CaTiO_3-xLaAlO_3$ 계의 소결 및 마이크로파 유전특성에 미치는 영향)

  • 이경태;여동훈;문종하
    • Journal of the Korean Ceramic Society
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    • v.34 no.6
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    • pp.629-635
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    • 1997
  • The effects of the annealing atmospheres(O2, N2) and sintering additives that Bi2O3 is a major composition on the microwave dielectric and sintering propertie of (1-x)CaTiO3-xLaAlO3 system were investigated. The annealing atmospheres and the increase of annealing time after sintering did not affect the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) of (1-x)CaTiO3-xLaAlO3 system. However, the Q.f0 values of (1-x)CaTiO3-xLaAlO3 were very sensitive to annealing atmospheres. As the annealing time increased under O2 atmosphere the Q.f0 values of (1-x)CaTiO3-xLaAlO3 enhanced untill 10 hrs in 0.3$\leq$x$\leq$0.6 region, but degraded over that time. The increasing rate of Q.f0 value increased wth increasing x. On the other hand, as the annealing time increased under N2 atmosphere the Q.f0 values were constant in x$\leq$0.6 region, increased gradually in x$\geq$0.7 region. When 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% as sintering additives were added to (Ca0.5La0.5) (Ti0.5Al0.5)O3 (x=0.5) the sintering temperature of 1$600^{\circ}C$ was lowered to 140$0^{\circ}C$, and the relative dielectric constant($\varepsilon$r) and temperature coefficient of resonant frequency($\tau$f) were not nearly changed. The addition of 0.97Bi2O3-0.03Al2O3 and 0.76Bi2O3-0.24NiO of 3wt% to (Ca0.5La0.5)(Ti0.5Al0.5)O3 made the Q.f0 values to be lower about 15% and 34%, respectively.

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Measurement of High Temperature Dielectric Property at Microwave Frequency Using Cavity Perturbation Method (Cavity Perturbation Method를 이용한 마이크로파 주파수대의 고온 유전특성 측정 연구)

  • Kim, Dong-Eun;Jung, Jin-Ho;Lee, Sung-Min;Kim, Hyung-Tae
    • Journal of Powder Materials
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    • v.13 no.6 s.59
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    • pp.455-461
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    • 2006
  • High temperature dielectric constants of the various ceramic materials have been measured using cavity perturbation method. The measurements were applied to refractory, traditional and fine ceramic powder compacts from room temperature to $1200^{\circ}C$. Calibration constant in the equation suggested by Hutcheon et al., was determined from the dielectric constants of reference specimen (teflon and alumina) at room temperature. From these results, informations on the refectory materials were obtained for the microwave kiln design and understanding of the microwave heating effects of ceramics have been improved.

Microwave Dielectric Properties of ZST Ceramics for Mobile Telecommunication System (기지국용 ZST세라믹스의 소결조건에 따른 고주파 유전 특성)

  • 서정철;이희영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.636-639
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    • 2000
  • Effects of sintering temperature and time on relative permittivity $\varepsilon$$\_$r/, unloaded quality factor Q$.$f and temperature coefficient of resonant frequency $\tau$$\_$f/ of dielectric resonator materials produced from commercial ZST powder were investigated in some detail. Q$.$f values, as determined from cavity perturbation method at 1.6 GHz, gradually increased with sintering temperature reaching the maximum at 1420$^{\circ}C$. However, bulk density and relative permittivity values, which increased with temperature, started to decrease above 1380$^{\circ}C$. In addition, Q$.$f values slightly increased with sintering time at the sintering temperature of 1300$^{\circ}C$∼1380$^{\circ}C$, while bulk density and relative permittivity values were approximately constant. It was also found that $\tau$$\_$f/ values were not affected by sintering temperature and time within the experimental conditions used.

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Cation Ordering and Microwave Dielectric Properties of $Ba(Mg_{1/3}Nb_{2/3})O_3$Ceramics: I. Long-Range Order Parameter ($Ba(Mg_{1/3}Nb_{2/3})O_3$ 세라믹스의 양이온 규칙구조와 유전특성: I. 장거리 규칙도)

  • 김영웅;박재환;김윤호;박재관
    • Korean Journal of Crystallography
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    • v.12 no.2
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    • pp.76-80
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    • 2001
  • We have studied the effect of sintering conditions on the long-range order parameter of the 1 : 2 cation ordering in Ba(Mg/sub 1/3/Nb/sub 2/3/)O₃microwave dielectrics prepared through a columbite precursor method. It is found that the order parameter depends strongly on the sintering conditions. As the heat-treatment time increases at 1350℃, the long-range order parameter decreases. When sintered at 1500℃ for 4 hours, BMN shows a high long-range order parameter of 0.94.

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The Effect of Calcination Temperature on Physical Properties of $Ba[Mg_{1/3}(Nb_{0.2}Ta_{0.8})_{2/3}]O_3$ Ceramics (하소온도가 $Ba[Mg_{1/3}(Nb_{0.2}Ta_{0.8})_{2/3}]O_3$ 세라믹스의 물리적 특성에 미치는 영향)

  • 김재윤;김부근;김강언;정수태;조상희
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.252-255
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    • 1999
  • The effect of calcination temperature(1st and 2nd calcining at 110$0^{\circ}C$ , 120$0^{\circ}C$ and 130$0^{\circ}C$ respectively) on physical properties of BMNT Ceramics ware investigated. The optimum 1st and 2nd calcination temperature were 120$0^{\circ}C$ , and sintering temperature was 155$0^{\circ}C$. In this condition, the sintering density was 7.53 [g/㎤] and the dielectric constant, Q.f$_{0}$ and $\tau$$_{r}$ were 26, 80, 300[GHz] and +1.5[ppm/$^{\circ}C$] respectively in the microwave range.e.e.

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