• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(1)
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• pp.439-442
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• 2002

We present in this Paper a microwave Power sensor fabricated by a standard CMOS process and a bulk micromachining process. The sensor consists of a CPW transmission line, a resistor as a healer, and thermocouple arrays. An input microwave heater, the resistor so that the temperature rises proportionally to the microwave power and tile thermocouple arrays convert it to an electrical signal. The sensor uses air bridged 8round of CPW realized by wire bonding to reduce tile device size and cost and to improve the thermal impedance. Al/poly-Si junctions are used for the thermocouples. Poly-Si is used for tile resister and Aluminium is for transmission line. The resistor and hot junctions of the thermocouples are placed on a low stress silicon nitride diaphragm to minimize a thermal loss. The fabricated device operates properly from 1㎼ to 100㎽\ulcorner of input power. The sensitivity was measured to be ,3.2～4.7 V/W.

• 한국광학회지
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• 제17권5호
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• pp.475-479
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• 2006

본 논문에서는 폴리머 링 광공진기를 이용하여 집적광학형 K-band용 마이크로웨이브 대역통과 필터를 제안하고 구현하였다. 특히, 열광학 효과를 이용하여 광공진기의 공진파장을 변화시킴으로써 대역통과 필터의 전달특성을 전기적으로 조절하였다. 측정된 필터의 중심주파수는 20 GHz, 소멸비는 약 15 dB, 3 dB 대역폭은 2 GHz, 그리고 Q값은 10이었다. 마이크로웨이브 필터에서 중심주파수의 출력특성을 27 dB범위 내에서 ${\sim}6.7dB/mW$로 조절할 수 있었다. 전기적으로 조절되는 전달특성을 갖는 이 필터는 마이크로웨이브스위치 등으로 응용할 수 있을 것으로 기대된다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2008년도 Asian Magnetics Conference
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• pp.310.2-310.2
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• 2008

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권2호
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• pp.249-254
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• 2015

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below $300^{\circ}C$. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller $V_{th}$ shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권3호
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• 전자공학회논문지D
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• 제34D권2호
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• pp.1-9
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• 1997

For the reduction of parasitic inductance and matching of bonding wire in the package of microwave devices, we propose multiple bonding wires buried in a dielectric material of FR-4 composite. This structure is analyzed using the method of moments (MoM) and compared with the common bondwires and ribbon interconnections. The FR-4 composite is modelled by the cole-cole model which can consider the loss and the variation of the permittivity in a frequency. At 20 GHz, the parasitic reactance is reduced by 90%, 80%, 60% compared to those of a single bonding wire in air, double bonding wires in air and ribbon interconnection in air, respectively. Also, the new bondwire shows very good matching of 60.ohm characteristic impedance and has 15dB, 10dB, 5dB improvement of the return loss and 2.5dB, 0.7dB, 0.2dB improvement of the insertion loss compared to the common interconnections. This technique can minimize the parasitic effect of bondwires in microwave device packaging.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1630-1632
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• 1997

We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.

• 한국콘텐츠학회논문지
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• 제9권4호
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• pp.19-26
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• 2009

전자파를 사용한 유방암 진단을 위한 전자파 노출장치는 RF 송수신 장치와 여러 개의 안테나로 구성된다. 전자파 노출장치를 통해 얻어진 피시험체의 전자파 특성 데이터는 역산란 해석 알고리즘을 통해 유전율과 도전율을 계산 할 수 있다. 본 논문에서는 시험체 내부에 대한 유전율 및 도전율 정보의 분석을 통해 유방암 세포의 유무를 판단하거나, 유방암 세포의 분포에 대한 정보를 쉽게 분석 수 있도록 전자파 기반 유방암 진단 소프트웨어를 개발하였다. 개발된 소프트웨어는 얻어진 유전율과 도전율 정보를 2D 혹은 3D의 컬러 영상으로 가시화 할 수 있는 기능을 제공해 줌으로써 사용자들이 암세포의 유무를 쉽게 판단할 수 있다. 또한 제안한 소프트웨어에서는 정밀한 토모그램 영상의 분석을 위해 영상의 단면뿐만 아니라 특정 영역 위치와 크기 정보를 표시해주는 기능을 제공한다.

• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.116-117
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• 1999

Optical fiber networks for microwave signal processing have been investigation . Theoretical and experimental results are presented in Z-shaped Double-Coupler Optical Resonator. The use of Mason's rule to calculate transfer functions greatly simplified the analysis in our model. A good comparison between modelling and experiment is presented.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.95-98
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• 1997

A nonlinear optical-microwave interaction is carried out in an uniplanar CPW-to-Slotline ring resonator on the semi-insulating GaAs substrate, in which a Schottky photodetector is monolithically integrated as a coupling gap. When the capacitive reactance of the detetor is modulated, the parametric amplification effect of the mixer occurs. In this device structure, the parametric amplification gain of 20 dB without the applied bias in RF signal is obtained. This microwave optoelectronic mixer can be used in the fiber-optic communication link.