• Title/Summary/Keyword: Microwave device

Search Result 201, Processing Time 0.03 seconds

A Study of Center Longitudinal Shunt-Series Coupling Slot Fed by Asymmetric Compound Iris for Waveguide Slot Coupler (도파관 슬롯 커플러용 비대칭 복합 아이리스에 의해 급전되는 중심 종방향 션트-시리즈 결합 슬롯에 관한 연구)

  • Kim, Byung-Mun;Ko, Ji-Hwan;Cho, Young-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.24 no.6
    • /
    • pp.586-594
    • /
    • 2013
  • This paper proposes a new coupling element of microwave slot coupler for designing waveguide slot array which can reduce the effect of undesired higher order mode coupling between coupling and radiating slots in the branch waveguide. The proposed device is composed of a centered longitudinal shunt-series coupling slot at the center of broad wall shared by two crossed rectangular waveguides and an asymmetric compound iris that excites the coupling slot. We first have obtained scattering parameters for the proposed coupler by use of EM S/W tool HFSS and then extracted the parameters of T- network equivalent circuit for the coupling slot. We also have analyzed the resonant properties such as resonant length and normalized admittance by changing the geometrical dimensions. The measured results for the fabricated coupler with short-circuited block ${\lambda}_g/4$ away from the coupling slot are well agreed with the simulated ones.

Research to Achieve Uniform Plasma in Multi-ground Capacitive Coupled Plasma

  • Park, Gi-Jeong;Lee, Yun-Seong;Yu, Dae-Ho;Lee, Jin-Won;Lee, Jeong-Beom;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.247.1-247.1
    • /
    • 2014
  • The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

  • PDF

A Design of Microstrip Directional Coupler with the Improved Directivity Characteristic (개선된 지향성을 갖는 마이크로스트립 방향성 결합기 설계)

  • Kim, Chul-Soo;Lim, Jong-Sik;Kim, Dong-Joo;Ahn, Dal
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.15 no.6
    • /
    • pp.548-553
    • /
    • 2004
  • In this paper, single, two, and three-section microstrip directional couplers are implemented for realizing the high directivity characteristics. The achievement of the high directivity with microstrip configuration is carried out by the distributed capacitor to decrease the even and odd mode phase difference. Capacitive compensation is performed by gap coupling of open stub formed in sub-coupled line. Therefore, insertion loss and power handling capability are not affected by the gap coupling. The proposed structure is easy to fabricate and incorporate another microwave device due to the planner microstrip. We designed and fabricated single, two, and three-section directional coupler with 20 ㏈ coupling. In spite of microstrip structure, the capacitive compensation structure shows 30 ㏈, 27 ㏈, and 25 ㏈ of directivity in single, two, and three-section directional couplers, respectively.

A Study on the 4-bit Microwave Phase Shiftter with PIN Diode (PIN 다이오드를 이용한 초고주파 4-비트 위상기에 관한 연구)

  • Cho, Young-Song;Kweon, Heag-Joong;Lee, Young-Chul;Shin, Chull-Chai
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.27 no.2
    • /
    • pp.47-54
    • /
    • 1990
  • In this paper, we design the 4-bit phase shifter which have $22.5^{\circ},45^{\circ},90^{\circ}$ and $180^{\circ}$ phase shift by applying the loaded line and switched network phase shifter. Its phase shift is variable with changing of the stub and passive device parameters. The experiments show the 6.5 dB average insertion loss and $10^{\circ}$ average phase error at center frequency, 6GHz. The results of experiment agree well with the theories except $180^{\circ}$ phase shifter.

  • PDF

Large Signal Unified Model for GaAs pHEMT using Modified Curtice Model (새롭게 수정된 Curtice 모델을 이용한 GaAs pHEMT 대신호 통합모델 구축)

  • 박덕종;염경환;장동필;이재현
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.12 no.4
    • /
    • pp.551-561
    • /
    • 2001
  • In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

  • PDF

Spin Wave Interference in Magnetic Nanostructures

  • Yang, Hyun-Soo;Kwon, Jae-Hyun;Mukherjee, Sankha Subhra;Jamali, Mahdi;Hayashi, Masamitsu
    • Proceedings of the Korean Magnestics Society Conference
    • /
    • 2011.12a
    • /
    • pp.7-8
    • /
    • 2011
  • Although yttrium iron garnet (YIG) has provided a great vehicle for the study of spin waves in the past, associated difficulties in film deposition and device fabrication using YIG had limited the applicability of spin waves to practical devices. However, microfabrication techniques have made it possible to characterize both the resonant as well as the travelling characteristics of spin waves in permalloy (Py). A variety of methods have been used for measuring spin waves, including Brillouin light scattering (BLS), magneto-optic Kerr effect (MOKE), vector network analyzer ferromagnetic resonance (VNA-FMR), and pulse inductive microwave magnetometry (PIMM). PIMM is one of the most preferred methodologies of measuring travelling spin waves. In this method, an electrical impulse is applied at one of two coplanar waveguides patterned on top of oxide-insulated Py, producing a local disturbance in the magnetization of the Py. The resulting disturbance travels down the Py in the form of waves, and is inductively picked up by the other coplanar waveguide. We investigate the effect of the pulse width of excitation pulses on the generated spin wave packets using both experimental results and micromagnetic simulations. We show that spin wave packets generated from electrical pulses are a superposition of two separate spin wave packets, one generated from the rising edge and the other from the falling edge, which interfere either constructively or destructively with one another, depending upon the magnitude and direction of the field bias conditions. A method of spin wave amplitude modulation is also presented by the linear superposition of spin waves. We use interfering spin waves resulting from two closely spaced voltage impulses for the modulation of the magnitude of the resultant spin wave packets.

  • PDF

A 20 GHz Band 1 Watt MMIC Power Amplifier (20 GHz대 1 Watt 고출력증폭 MMIC의 설계 및 제작)

  • 임종식;김종욱;강성춘;남상욱
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
    • /
    • v.10 no.7
    • /
    • pp.1044-1052
    • /
    • 1999
  • A 2-stage 1 watt MMIC(Monolithic Microwave Integrated Circuits) HPA(High Power Amplifiers) at 20 GHz band has been designed and fabricated. The $0.15\mu\textrm{m}$ with the width of $400\mu\textrm{m}$for single device pHEMT technology was used for the fabrication of this MMIC HPA. Due to the series feedback technique from source to ground, bias circuits and stabilization circuits on the main microstrip line, the stability factors(Ks) are more than one at full frequency. The independent operation for each stage and excellent S11, S22 less than -20 dB have been obtained by using lange couplers. For beginning the easy design, linear S-parameters have been extracted from the nonlinear equivalent circuit in foundry library, and equivalent circuits of devices at in/output ports were calculated from this S-parameters. The measured performances, which are in well agreement with the predicted ones, showed the MMIC HPA in this paper has the minimum 15 dB of linear gain, -20 dB of reflection coefficients and 31 dBm of output power over 17~25 GHz.

  • PDF

High Performance Ku-band 2W MMIC Power Amplifier for Satellite Communications (위성 통신 시스템 응용을 위한 우수한 성능의 Ku 대역 2W MMIC 전력증폭기)

  • Ryu, Keun-Kwan;Ahn, Ki-Burm;Kim, Sung-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.18 no.11
    • /
    • pp.2697-2702
    • /
    • 2014
  • In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.

Offshore Wind Resource Assessment around Korean Peninsula by using QuikSCAT Satellite Data (QuikSCAT 위성 데이터를 이용한 한반도 주변의 해상 풍력자원 평가)

  • Jang, Jea-Kyung;Yu, Byoung-Min;Ryu, Ki-Wahn;Lee, Jun-Shin
    • Journal of the Korean Society for Aeronautical & Space Sciences
    • /
    • v.37 no.11
    • /
    • pp.1121-1130
    • /
    • 2009
  • In order to investigate the offshore wind resources, the measured data from the QuikSCAT satellite was analyzed from Jan 2000 to Dec 2008. QuikSCAT satellite is a specialized device for a microwave scatterometer that measures near-surface wind speed and direction under all weather and cloud conditions. Wind speed measured at 10 m above from the sea surface was extrapolated to the hub height by using the power law model. It has been found that the high wind energy prevailing in the south sea and the east sea of the Korean peninsula. From the limitation of seawater depth for piling the tower and archipelagic environment around the south sea, the west and the south-west sea are favorable to construct the large scale offshore wind farm, but it needs efficient blade considering relatively low wind speed. Wind map and monthly variation of wind speed and wind rose using wind energy density were investigated at the specified positions.

HEMT Mixer for Phase Conjugator Applications in the LS Band (공액 위상변위기용 LS 밴드 HEMT 혼합기)

  • 전중창
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.8 no.2
    • /
    • pp.239-244
    • /
    • 2004
  • In this paper, we have developed a frequency mixer which can be used as a microwave phase conjugator in the LS band retrodirective antenna system. The mixer as a phase conjugator must have an If signal of which frequency is nearly as high as that of an RF signal, so this fact brings difficulty in the combination of input signals and the design of impedance matching circuit. The circuit configuration is chosen to be of the gate mixer using a pseudomorphic HEMT device. The operating frequencies are 4.00 ㎓, 2.01 ㎓, and 1.99 ㎓ for LO, RF, and IF, respectively. Conversion gain is measured to be 12.5 ㏈ and 1 ㏈ compression point -34 ㏈m at the LO power of -7 ㏈m. The mixer fabricated in this research is the single-ended type, where RF leakage signal appears inevitably at the If port because RF and If frequencies are almost the same. The circuit topology suggested here can be applied directly to the design of balanced-type mixers and phase conjugators.