• ETRI Journal
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• v.31 no.3
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• ETRI Journal
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• v.29 no.5
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• pp.673-675
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• 2007

We present the design and fabrication of a 60 GHz medium power amplifier monolithic microwave integrated circuit with excellent gain-flatness for a 60 GHz radio-over-fiber system. The circuit has a 4-stage structure using microstrip coupled lines instead of metal-insulator-metal capacitors for unconditional stability of the amplifier and yield enhancement. The gains of each stage of the amplifier are modified to provide broadband characteristics of input/output matching for the first and fourth stages and to achieve higher gains for the second and third stages to improve the gain-flatness of the amplifier for wideband.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.380-388
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• 2011

In this paper, we developed the X-band 63 watt pulsed SSPA(Solid State Power Amplifier) by using HMIC(Hybrid Microwave Integrated Circuits). The pulsed SSPA consists of power supply and 3-stage amplifier modules : pre-amplifier stage, driver-amplifier stage, final-amplifier stage. The developed pulsed SSPA provides more than 63 watts of output power with a short pulse width and the duty cycle of up to 1.2 % at $70^{\circ}C$. The fabricated module offers great than 37 dB of saturated gain across the operating band. Input and output VSWR is <1.5:1. This module has an average current of 400 mA typical and operates at a +28 $V_{dc}$ supply. The developed SSPA in this paper can apply to pulsed Doppler radar with high speed operation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.11
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• pp.695-700
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• 2018

This paper presents the development of compact and lightweight broadband power amplifier module using HMIC (Hybrid Microwave Integrated Circuit) technology that could be high-density integration for many non-packaged microwave components into the small area of a high dielectric constant printed circuit board, such as a ceramic substrate, also using the special design and fabrication schemes for the structure of minimized electromagnetic interference to obtain the homogeneous electrical performance at the wideband frequency. The results confirmed that the small signal gain has a gain flatness of ${\pm}1.5dB$ within the range of 32 to 36 dB. In addition, the output power satisfied more than 30 dBm. The noise figure was measured within 7 dB, and OIP3 (Output Third Order Intercept Point) was more than 39 dBm. The fabricated broadband power amplifier satisfied the target specification required to electrically drive the high power amplifiers of jamming generators for electronic warfare, so the actual applicability to the system was verified. Future studies will be aimed at designing other similar microwave power amplifiers in the future.

• ETRI Journal
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• v.32 no.1
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• pp.151-153
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• 2010

A highly efficient linear and compactly integrated series-type Doherty power amplifier (PA) has been developed for wideband code-division multiple access handset applications. To overcome the size limit of a typical Doherty amplifier, all circuit elements, such as matching circuits and impedance transformers, are fully integrated into a single monolithic microwave integrated circuit (MMIC). The implemented PA shows a very low idle current of 25 mA and an excellent power-added efficiency of 25.1% at an output power of 19 dBm by using an extended Doherty concept. Accordingly, its average current consumption was reduced by 51% and 41% in urban and suburban environments, respectively, when compared with a class-AB PA. By adding a simple predistorter to the PA, the PA showed an adjacent channel leakage ratio better than -42 dBc over the whole output power range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.236-238
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• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• Journal of Advanced Navigation Technology
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• v.3 no.1
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• pp.52-59
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• 1999

Digital microwave wideband receiver including linear amplifier, analog-to-digital converter(ADC) and digital signal processor is able to analyze its performance using sensitivity and dynamic range of system. Determination of gain, third-order intermodulation products and ADC characteristics and design criteria for the linear amplifier chain is essential problem for sensitive and dynamic range. Also, if there are two signals with frequencies very close, digital signal processor must be able to separate the two signals. In this paper, we measured dynamic range as gain was changed and determined gain value for the proper sensitivity and dynamic range and high resolution spectrum estimation was used to separate two close signals.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.3
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• pp.34-42
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• 1993

An analytic approach to wide-band amplification using simplified equivalent MESFET modeling has enabled an ultrabroad-band flat-gain amplifier from DC to microwave. The developed lossy-match ultrabroad-band amplifier operates as a RC coupled circuit in the low-frequency range and lossless impedance matching circuit in the microwave frequency range with gain compensation circuits. The reduced gain caused by external resistors is compensated using 2-stage cascade amplification, and the gain of designed unit is 12.5.+-.1dB from the vicinity of DC to 7GAz. The experimental gain characteristics are good agreement with computer simulated results. The input and output VSWRs are measured under 2:1 over the operating frequency range, and the gain goes down over 15dBrange with various gate bias voltages.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.5
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• pp.1-8
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• 1976

Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.

• Current Optics and Photonics
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• v.2 no.1
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• pp.27-33
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• 2018

We report the physical implementation of a tunable photonic microwave delay line filter based on injection locking of a single Fabry-Perot laser diode (FP-LD) to a reflective semiconductor optical amplifier (RSOA). The laser generates equally spaced multiple wavelengths and a single tapped-delay line can be obtained with a dispersive single mode fiber. The filter frequency response depends on the wavelength spacing and can be tuned by the temperature of the FP-LD varying lasing wavelength. For amplitude control of the wavelengths, we use gain saturation of the RSOA and the offset between the peak wavelengths of the FP-LD and the RSOA to decrease the amplitude difference in the wavelengths. From the temperature change of total $15^{\circ}C$, the filter, consisting of four flat wavelengths and two wavelengths with slightly lower amplitudes on both sides, has shown tunability of about 390 MHz.