• ETRI Journal
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• 제35권3호
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• pp.546-549
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• 2013

A Ka-band 6-W high power microwave monolithic integrated circuit amplifier for use in a very small aperture terminal system requiring high linearity is designed and fabricated using commercial 0.15-${\mu}m$ GaAs pHEMT technology. This three-stage amplifier, with a chip size of 22.1 $mm^2$ can achieve a saturated output power of 6 W with a 21% power-added efficiency and 15-dB small signal gain over a frequency range of 28.5 GHz to 30.5 GHz. To obtain high linearity, the amplifier employs a class-A bias and demonstrates an output third-order intercept point of greater than 43.5 dBm over the above-mentioned frequency range.

• Journal of electromagnetic engineering and science
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• 제2권1호
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• pp.5-10
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• 2002

We have analized the inverse class-F and class-F amplifiers using their waveforms. From the analytic equations derived from the analysis, we have calculated tole efficiencies, output powers, DC power dissipations, and optimum fundamental load impedances of the inverse class-F and class-F amplifiers. We also have compared them for various operation conditions, which include the same peak current, saute DC power dissipation, same fundamental RF output power, and same fundamental load impedance with different Ron(on-resistance). These analyses have clearly shown the performance limitations, advantages, and guide to the optimized design of the inverse class-F amplifiers.

• ETRI Journal
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• 제36권3호
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• pp.498-501
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• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• 전자공학회논문지D
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• 제34D권3호
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• pp.25-33
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• 1997

In the design of microwave multi-stage amplifiers composed of N amplifier modules, the variation of performances of amplifier as various connection length between modules has been studied. In addition, the methods, equations and conditions for the maximum gain or the most flat gain are presented. The results of sensitivity analysis for the connection length showed that the small change in phase of input, output reflection coefficients(S$_{11}$, S$_{22}$) of module itself is the most important in determination of connection length for the most flat gain. Th egain flatness of 2-module amplifier of which connection length between modules had been determined by presented methods was the best one out of performances with various arbitrary connectio lengths.s.

• 한국통신학회논문지
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• 제15권1호
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• pp.51-57
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• 1990

입, 출력 정합단에 타원여파기와 보조회로를 첨가하여 광대역증폭기의 마이크로파 집적회로(MIC)를 설계한다. 이 증폭기를 해석하기 위하여 GaAS MESFET의 입, 출력회로를 단방향성 등가회로로 변환한다. 입,출력 임피던스는 타원여파기로 정합하여 집적회로화 한다. 실험결과는 4~8GHz의 주파수내역에서 이득 10.5dB, 최대 정재파비 2.1:1 및 최대 잡음지수 2.5dB의 특성을 보인다.

• Current Optics and Photonics
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• 제2권6호
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• pp.563-567
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• 2018

We propose and experimentally demonstrate a simple tunable photonic microwave band-pass filter with high resolution using a reflective semiconductor optical amplifier (RSOA) and an optical time-delay line. The RSOA is used as a gain medium for generating cross-gain modulation (XGM) effect as well as an optical source. The optical source provides narrow spectral width by self-injection locking the RSOA in conjunction with a partial reflection filter with specific center wavelength. Then, when the RSOA is operated in the saturation region and the modulated recursive signal is injected into the RSOA, the recursive signal is inversely copied to the injection locked optical source due to the XGM effect. Also, the tunability of the passband of the proposed microwave filter is shown by controlling an optical time-delay line in a recursive loop.

• 대한전자공학회논문지
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• 제27권9호
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• pp.1344-1350
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• 1990

A design method of ultra-broadband microwave amplifier is presented. A lossy network is represented as the combination of a serial impedance component and a parallel admittance component, and the realizable ranges of the gain and the reflection coefficients are derived with the components connected to the input, output or interstage network. The matching network has been designed by using the serial and parallel immittance loci which have the constant gain or reflection coefficients within the realizable ranges. Using the proposed method, deisgn examples of ultra-broadband amplifiers operating from dc to 12GHz frequency range are presented.

• 대한전자공학회논문지
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• 제26권12호
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• pp.2025-2031
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• 1989

In this paper, using optical effect of characteristics of GaAs compound, two potential application of optical controlled GaAs MESFET are demonstrated` detector, microwave amplifier gain control. These lead to the possibility of the interaction with optical devices. The preliminary experiments show the light induced voltage, the increase in the drain currnet and the change in the microwave scattering parameters of GaAs MESFET under optical illumination(He-Ne laser). And imcrowave amplifier gain is round to be varied with changing in intensity of optical illumination.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -1
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• pp.654-657
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• 2002

This paper introduces the design and implementation of 40-㎓-band low noise amplifier (LNA) with ultra low gain flatness for wide-band wireless multimedia and satellite communication systems. The 40-㎓-band 4-stage LNA MMIC (Monolithic Microwave Integrated Circuit) demonstrates a small signal gain of more than 20 ㏈, an input return loss of 10.3 ㏈, and an output return loss of 16.3 ㏈ for 37$\square$42 ㎓. The gain flatness of the 40-㎓-band 4-stage LNA MMIC was 0.1 ㏈ for 37$\square$42 ㎓. The noise figure of the 40 ㎓-band LNA was simulated to be less than 2.7 dB for 37~42 ㎓. The chip size of the 4-stage LNA MMIC was 3.7${\times}$1.7 $\textrm{mm}^2$.

• 한국ITS학회 논문지
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• 제5권1호
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• pp.13-19
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• 2006

본 논문에서는 7 - 11 GHz 대역에서 동작하는 광대역 Microwave Power Module (MPM)을 설계하고 제작하였다. MPM 은 TWT (Traveling Wave Tube)와 SSA (Solid State Amplifier)로 구성되며, TWT와 SSA의 이득을 최적으로 배분하여 잡음지수를 줄일 수 있도록 설계하였다. Agilent사의 ADS (Advanced Design System)을 이용하여 SSA의 컴퓨터 모델링과 시뮬레이션을 수행 하였으며, 직렬 분포형 증폭기 구조를 이용하여 설계 및 제작하였다. 제작된 광대역 MPM은 7 - 11 GHz 대역에서 8.3 - 10.02 dB의 잡음 지수, 9 GHz에서 38.12 dBm의 출력 전력이 측정되었다.