• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.11
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• pp.2697-2702
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• 2014

In this paper, we demonstrated a Ku-band 2W MMIC power amplifier for satellite communication applications. The device technology used relies on $0.25{\mu}m$ GaAs pseudomorphic high electron mobility transistor (PHEMT) of Wireless Information Networking (WIN) Semiconductor foundry. The 2W MMIC power amplifier has gain of over 29 dB and saturation output power of over 33.4 dBm in the frequency range of 13.75 ~ 14.5 GHz. Power added efficiency (PAE) is a 29 %. To our knowledge, this is the highest power added efficiency reported for any commercial GaAs-based 2W MMIC power amplifier in the Ku-band.

• Journal of IKEEE
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• v.23 no.2
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• pp.425-430
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• 2019

This work describes the design and characterization of a X-band power amplifier (PA) monolithic microwave integrated circuit (MMIC) using a $0.25{\mu}m$ gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The developed X-band power amplifier MMIC has small signal gain of over 22.7 dB and saturated output power of 43.02 dBm (20.04 W) over the entire band of 9 to 10 GHz. Maximum saturated output power is a 43.84 dBm (24.21 W) at 9.5 GHz. Its power added efficiency (PAE) is 41.0~51.24% and the chip dimensions are $3.7mm{\times}2.3mm$, generating the output power density of $2.84W/mm^2$. The developed GaN power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of IKEEE
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• v.24 no.4
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• pp.1093-1097
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• 2020

This work describes the design and characterization of a Ku-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) for satellite communication applications. The device technology used relies on 0.25 ㎛ gate length gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (PHEMT) of wireless information networking (WIN) semiconductor foundry. The developed Ku-band PHEMT MMIC power amplifier has a small-signal gain of 22.2~23.1 dB and saturated output power of 34.8~35.4 dBm over the entire band of 13.75 to 14.5 GHz. Maximum saturated output power is a 35.4 dBm (3.47 W) at 13.75 GHz. Its power added efficiency (PAE) is 30.6~37.83% and the chip dimensions are 4.4 mm×1.9 mm. The developed 3 W PHEMT MMIC power amplifier is expected to be applied in a variety of Ku-band satellite communication applications.

• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.85-88
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• 1995

In this report the large-signal RF performance of GaN MESFETs at different operating temperatures is investigated using a harmonic balance modeling technique. The predicted device performance calculated by the large-si anal model of a GaN FET is shown to be in good agreement with experimen tar data. It is demonstrated that the optimal RF performance of a GaN MESFET amplifier is achieved by balancing the input impedence for a optimized de sign. A GaN MESFET with the optimized design is predicted to produce maximum RF output power of about 4W/mm and 1W/mm at room temperature and 773 K, respectively. The device produces a peak Power-Added Efficiency (PAE) of 52% and 32% at the two temperatures.

• Current Optics and Photonics
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• v.2 no.6
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• pp.519-524
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• 2018

We propose a transverse load sensor with reconfigurable measurement accuracy based on a microwave photonic filter in the $K_u$ band, incorporating a polarization-maintaining fiber Bragg grating. A prototype sensor with a reconfigurable measurement accuracy tuning range from 6.09 to 9.56 GHz/(N/mm), and corresponding minimal detectable load range from 0.0167 to 0.0263 N/mm, is experimentally demonstrated. The results illustrate that up to 40% manufacturing error in the grating length can be dynamically calibrated to the same corresponding measurement accuracy for the proposed transverse load sensor, by controlling the semiconductor optical amplifier's injection current in the range of 154 to 419 mA.

• Journal of the Korean Magnetic Resonance Society
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• v.23 no.3
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• pp.81-86
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• 2019

Overhauser dynamic nuclear polarization (O-DNP) has been an efficient method to boost the thermal nuclear polarization in liquids at room temperature. However, O-DNP for a benchtop NMR using a permanent magnet has remained unexplored yet. In this work, we report the development of an O-DNP system adopting a permanent magnet of 1.6 T. Q-band (~43 GHz) high-power amplifier produced 6 W microwave for saturation. Instead of resonator, we used an open-type antenna for the microwave irradiation. For several representative small molecules, we measured the concentration and frequency dependences of the enhancement factor. This work paves the way for the development of a benchtop DNP-NMR system overcoming its disadvantage of low quality signal when using a permanent magnet.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.31-36
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• 1984

Various efforts have been dedicated to obtain the negative impedances in microwave frequencies with semiconductor devices by many scientists for f: some passed decades, and as a result, many solid state microwave devices have been developed. But they all have much less maximum power ratings with respect to the vaccum tubes. In this paper, a MOSFET is proposed and studied, which have a periodic structure of multigates on the semiconductor via insulator. The hish electric field in the channel induces a voltage distribution on the gates by electrostatic coupling, and the polarization so induced between the gates is able to give a space modulation of the velocity of carriers or the current density in the channel, and as a natural consequence, a microwave amplifier with higher power ratings can be expected.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.4
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• pp.624-632
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• 1994

In this paper, we implement modulator of 155Mbps 64QAM RF MODEM, CCITT G. 707 SDH(Synchronous Digital Hierachy) 1 level, for DMR(DIgital Microwave Radio) STM-1 transmission, PSF(Pulse Shaping Filter) plays an important role to analyze modulator. We use 7 orders elliptic filter instead of Chebychev filter(roll-off facter a=0.5)in this paper. we obtain that roll-off factor, a is 0.33, group delay is less than 10nsec using this filter. Also we get -20dBm output level after passing the PSF, and 0dBm output level after passing the IF amplifier.