• Title/Summary/Keyword: Microwave Plasma-Enhanced Chemical Vapor Deposition

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Control the growth direction of carbon nanofibers under direct current bias voltage applied microwave plasma enhanced chemical vapor deposition system

  • Kim Sung-Hoon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.5
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    • pp.198-201
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    • 2005
  • Carbon nanofibers were formed on silicon substrate which was applied by negative direct current (DC) bias voltage using microwave plasma-enhanced chemical vapor deposition method. Formation of carbon nanofibers were varied according to the variation of the applied bias voltage. At -250 V, we found that the growth direction of carbon nanofibers followed the applied direction of the bias voltage. Based on these results, we suggest one of the possible techniques to control the growth direction of the carbon nanofibers.

Physical Properties of Diamond-like Carbon Thin Films Prepared by a Microwave Plasma-Enhanced Chemical Vapor Deposition (마이크로웨이브 화학기상증착법으로 성장된 다이아몬드상 카본박막의 물리적인 특성연구)

  • Choi, Won-Seok;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.791-794
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    • 2003
  • DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

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Physical Properties of Diamond-like Carbon Thin Films Prepared by a Microwave Plasma-Enhanced Chemical Vapor Deposition (마이크로웨이브 화학기상증착법으로 성장된 다이아몬드상 카본박막의 물리적인 특성연구)

  • Choi, Won-Seok;Hong, Byung-You
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.842-845
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    • 2003
  • DLC thin films were prepared by microwave plasma-enhanced chemical vapor deposition method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas mixture. The negative DC bias ($-450V{\sim}-550V$) was applied to enhance the adhesion between the film and the substrate. The films were characterized by Raman spectrometer. The surface morphology was observed by an atomic force microscope (AFM). And also, the friction coefficients were investigated by AFM in friction force microscope (FFM) mode, which were compared with the pin-on-disc (POD) measurement.

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A Study on the Diamond Thin Films Synthesized by Microwave Plasma Enhance Chemical Vapor Deposition (마이크로웨이브 플라즈마 화학기상성장법에 의한 다이아몬드 박막의 합성에 관한 연구)

  • 이병수;이상희;박상현;유동현;이백수;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.809-814
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    • 1998
  • In this study, the metastable state diamond thin films have been deposited on Si substrates from methand-hydrogen and oxygen mixture usin gMicrowave Plasma Enhanced Chemical Vapor Deposition (MWPCVD) method. effects experimental parameters MWPCVD including methan concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)∼5%(5sccm). oxygen concentration of 0∼80%(2.4sccm). operating pressure of 30Torr∼ 70Torr, deposition time of 1∼32hr. SEM, WRD, and Raman spectroscopy were employed to analyse the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non=diamond phases respectively.

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Deposition of c-BN Films on Tungsten Carbide Insert Tool by Microwave Plasma Enhanced Chemical Vapor Deposition(MPECVD) (MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착)

  • Yoon, Su-Jong;Kim, Tae-Gyu
    • Journal of the Korean institute of surface engineering
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    • v.41 no.2
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    • pp.43-47
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    • 2008
  • Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

Effect of deposition on the properties of diamond thin films synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition (MPCVD에 의해 합성된 다이아몬드 박막 특성에 대한 증착조건의 영향)

  • Lee, Byoung-Soo;Lee, Duch-Chool
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.51 no.1
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    • pp.33-38
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    • 2002
  • In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

Effect of Oxygen for Diamond Film Synthesis with C-Hexane in Microwave Plasma Enhanced CVD Process

  • Han, Sang-Bo
    • Journal of Electrical Engineering and Technology
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    • v.7 no.6
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    • pp.983-989
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    • 2012
  • The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

Growth of Carbon Nanotubes by Microwave Plasma Enhanced Chemical Vapor Deposition (마이크로웨이브 플라즈마 화학기상증착법에 의한 탄소나노튜브의 성장특성)

  • Choi Sung-Hun;Lee Jae-Hyeoung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.501-506
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    • 2006
  • Carbon nanotubes (CNTs) were grown with a microwave plasma enhanced chemical vapor deposition (MPECVD) method, which has been regarded as one of the most promising candidates for the synthesis of CNTs due to the vertical alignment, the low temperature and the large area growth. MPECVD used methane ($CH_4$) and hydrogen ($H_2$) gas for the growth of CNTs. 10 nm thick Ni catalytic layer were deposited on the Ti coated Si substrate by RF magnetron sputtering method. In this work, the pretreatment was that the Ni catalytic layer in different microwave power (600, 700, and 800 W). After that, CNTs deposited on different pressures (8, 12, 16, and 24 Torr) and grown same microwave power (800 W). SEM (Scanning electron microscopy) images showed Ni catalytic layer diameter and density variations were dependent with their pretreatment conditions. Raman spectroscopy of CNTs shows that $I_D/I_G$ ratios and G-peak positions vary with pretreatment conditions.

Synthesis of Carbon Nanowalls by Microwave PECVD for Battery Electrode

  • Kim, Sung Yun;Shin, Seung Kwon;Kim, Hyungchul;Jung, Yeun-Ho;Kang, Hyunil;Choi, Won Seok;Kweon, Gi Back
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.4
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    • pp.198-200
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    • 2015
  • The microwave plasma enhanced chemical vapor deposition (PECVD) system was used to grow a carbon nanowall (CNW) on a silicon (Si) substrate with hydrogen (H2) and methane (CH4) gases. To find the growth mechanism of CNW, we increased the growth time of CNW from 5 to 30 min. The vertical and surficial conditions of the grown CNWs according to growth time were characterized by field emission scanning electron microscopy (FE-SEM). Energy dispersive spectroscopy (EDS) measurements showed that the CNWs consisted solely of carbon.