• 대한기계학회논문집A
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• 제27권8호
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• pp.1266-1272
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• 2003

This paper presents a new class of magnetic microsensors based on the Hall effect in AC microplasma. In the theoretical study, we develop a simple model of the plasma Hall sensor and express the plasma Hall voltage as a function of magnetic field, plasma discharge field, pressure, and electrode geometry. On this basis, we have designed and fabricated magnetic microsensors using AC neon plasma. In the experiment, we have measured the Hall voltage output of the plasma microsensors for varying five different conditions, including the frequency and the magnitude of magnetic field, the frequency and the magnitude of plasma discharge voltage, and the neon pressure. The fabricated magnetic microsensors show a magnetic field sensitivity of 8.87${\pm}$0.18㎷/G with 4.48% nonlinearity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.175-176
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• 2007

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.620-627
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• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• Journal of Electrical Engineering and information Science
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• 제3권2호
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.145-146
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• 1994

A SOI technology is promising for micromachining: high temperature operation, the fabrication easiness of sophisticated and 3D microstructures, radiation hardness, integrated sensors etc. This paper describes reviews of SOI technologies, and their applications microsensors and microactuators

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1558-1560
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• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

• 전자공학회논문지D
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• 제35D권4호
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• pp.78-83
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• 1998

A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1992년도 한국자동제어학술회의논문집(국제학술편); KOEX, Seoul; 19-21 Oct. 1992
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• pp.22-28
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• 1992

The need for intelligent systems that can operate in an unstructured, dynamic environment has created a growing demand for the use of multiple, distributed sensors. While most research in multisensor fusion has revolved around applications in object recognition-including military applications for automatic target recognition-developments in microsensor technology are encouraging more research in affordable, highly-redundant sensor networks. Three trends that are described at length are the increasing use of microsensors, the techniques that are used in the handling of partial or uncertain data, and the application of neural network techniques for sensor fusion.

• 한국해양학회지:바다
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• 제10권1호
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• pp.31-37
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• 2005

갯벌에서 순 광합성률의 시기적 변화를 살펴보기 위해 강화군의 서남단과 남단에 각각 위치한 장화리와 동막리의 조간대 갯벌과, 유기물 함량이 상대적으로 높은 인천 북항 조간대 갯벌을 대상으로 2003년 12월부터 2004년 6월까지 4회에 걸쳐 산소 미세전극을 이용하여 퇴적물 내 산소 농도의 수직 분포를 측정하였다. 조사 기간 동안 장화리와 동막리 갯벌에서 산소의 퇴적물 투과 깊이는 12월에 가장 컸으며(평균 $4.0{\sim}4.1\;mm)$),이후 조사에서는 각각 평균 $2.2{\sim}2.8\;mm$와 $1.6{\sim}l.8\;mm$의 값으로 작아지는 경향을 보였다. 흥미롭게도 인천 북항 갯벌의 산소 투과 깊이는 시기에 관계없이 $0.8{\pm}0.3\;mm$(평균${\pm}ISD$)의 작은 값을 나타냈다. 순 광합성률은 동막리 갯벌에서 3월에 최대값$(11.1{\pm}2.8\;mmol\;O_2\;m^{-2}\;h^{-1})$을 보였으며 장화리와 인천 북항 갯벌에서는 5월에 각각 $6.1{\pm}4.1\;mmol\;O_2\;m^{-2}\;h^{-1}$와 $6.4{\pm}1.4\;mmol\;O_2\;m^{-2}\;h^{-1}$의 최대값을 보였다. 순 광합성률이 최대값을 보인 시기에, 퇴적물 내 공극수의 용존 산소 농도의 최대값은 깊이 $0.1{\sim}0.5\;mm$구간에서 관찰되었으며, 대기로 포화된 표층 해수의 용존 산소 농도에 비해 평균적으로 $1.8{\sim}3.2$배 높았다. 6월 조사 당일에 현장의 광량(400 ${\mu}Einst\;m^{-2}\;s^{-1}$)이 다른 조사 시기에 비해 낮았지만, 이를 감안하더라도 세 지역의 순 광합성률은 크게 감소하여 $0.2\;mmol\;O_2\;m^{-2}\;h^{-1}$이하의 값을 나타냈다. 결론적으로, 순 광합성률의 시기적인 변화 양상은 연구 지역에 따라 다소 차이가 있었지만, 대개 봄철에 표층 0.5mm이내에 분포하는 저서 일차 생산자에 의해 광합성이 가장 활발하게 일어나는 것으로 나타났다. 본 연구는 산소 미세전극을 이용한 갯벌의 광합성 연구에 대한 국내에서의 첫 보고이며, 이 기술은 갯벌의 일차 생산력이나 표층 퇴적물의 산소 소모율 등을 추정하는데 유용하게 활용될 수 있을 것으로 여겨진다.