• Transactions of the Korean Society of Mechanical Engineers A
• /
• v.27 no.8
• /
• pp.1266-1272
• /
• 2003

This paper presents a new class of magnetic microsensors based on the Hall effect in AC microplasma. In the theoretical study, we develop a simple model of the plasma Hall sensor and express the plasma Hall voltage as a function of magnetic field, plasma discharge field, pressure, and electrode geometry. On this basis, we have designed and fabricated magnetic microsensors using AC neon plasma. In the experiment, we have measured the Hall voltage output of the plasma microsensors for varying five different conditions, including the frequency and the magnitude of magnetic field, the frequency and the magnitude of plasma discharge voltage, and the neon pressure. The fabricated magnetic microsensors show a magnetic field sensitivity of 8.87${\pm}$0.18㎷/G with 4.48% nonlinearity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.175-176
• /
• 2007

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.8
• /
• pp.620-627
• /
• 1998

For chemical microsensors such as humidity and gas sensors, it is essential to obtain a single pore with a large inner surface and straight structure. In this paper, cylindrical macroporous silicon layers have been formed of p-silicon substrate by anodization in HF-ethanol-water solution with an applied current. The pores grew normal to the (100) surface and were uniformly distributed. The pore diameter was approximately $1.5~2{\mu}m$ with a depth of $20~30{\mu}m$ and the pores were not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. Porous silicon diaphragms 18 to $200{\mu}m$ thick were formed by anistropic etching in TMAH solution and then anodization. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer applications for microsensors, micromachining, and separators.

• Journal of Electrical Engineering and information Science
• /
• v.3 no.2
• /
• pp.239-244
• /
• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.05a
• /
• pp.145-146
• /
• 1994

A SOI technology is promising for micromachining: high temperature operation, the fabrication easiness of sophisticated and 3D microstructures, radiation hardness, integrated sensors etc. This paper describes reviews of SOI technologies, and their applications microsensors and microactuators

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.509-513
• /
• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1558-1560
• /
• 1998

Macroporous silicon diaphragms 20 to $200{\mu}m$ thick have been formed on p-type silicon by anistropic etching in TMAH solution and then by electrochemical etching in HF-ethanol-water solution with an applied current. The pores have a pore diameter of $1.5{\sim}2{\mu}m$, with a depth of $20{\sim}30{\mu}m$ and are not interconnected, which are in sharp contrast to the porous silicon reported previouly for similarly doped p-Si. The fabrication of macroporous silicon and free-standing diaphragms is expected to offer new applications for microsensors, micro-machining, and separators.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.4
• /
• pp.78-83
• /
• 1998

A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

• 제어로봇시스템학회:학술대회논문집
• /
• 1992.10b
• /
• pp.22-28
• /
• 1992

The need for intelligent systems that can operate in an unstructured, dynamic environment has created a growing demand for the use of multiple, distributed sensors. While most research in multisensor fusion has revolved around applications in object recognition-including military applications for automatic target recognition-developments in microsensor technology are encouraging more research in affordable, highly-redundant sensor networks. Three trends that are described at length are the increasing use of microsensors, the techniques that are used in the handling of partial or uncertain data, and the application of neural network techniques for sensor fusion.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.10 no.1
• /
• pp.31-37
• /
• 2005

To find out temporal variations of net photosynthetic rate (NPR) of intertidal flats, we measured oxygen microprofiles in sediments with oxygen microsensors 4 times from December 2003 to June 2004. The study areas were the intertidial flats in Janghwa-ri and Dongmak-ri, located on the southwestern and the southern parts of Ganghwa-gun, respectively, and in Incheon North Harbor where the content of organic matter was relatively high. During the investigation, oxygen penetration depths in the tidal flats of Janghwa-ri and Dongmak-ri were high in December (mean values of 4.0-4.1 mm). Thereafter, the oxygen penetration depths declined to mean values of 2.2-2.8 mm and 1.6-1.8 mm in the two tidal flats. Interestingly, the oxygen penetration depths in the Incheon North Harbor tidal flat showed a lower range $(0.8{\pm}0.3\;mm;\;mean{\pm}1SD)$ over the period. The maximum NPR in the Dongmak-ri tidal flat was found in March $(11.1{\pm}2.8\;mmol\;O_2\;m^{-2}\;h^{-1})$, and those In Janghwa-ri $(6.1{\pm}4.1\;mmol\;O_2\;m^{-2}\;h^{-1})$ and Incheon North Harbor $(6.4{\pm}1.4\;mmol\;O_2\;m^{-2}\;h^{-1})$ were observed in May. During the period when NPR was most active, the highest oxygen concentration was found at 0.1-0.5 mm depth below the surface sediment, and was on average 1.8-3.2 times higher than the air-saturated oxygen concentration in the overlying seawater. Although we took into account of low in situ light intensity $(400{\mu}Einst\;m^{-2}\;s^{-1})$ during the investigation in June, NPR in the 3 study areas decreased significantly to less than $0.2\;mmol\;O_2\;m^{-2}\;h^{-1})$. Thus, temporal variations of NPR were somewhat different among the tidal flats. Generally, benthic primary producers inhabiting in the uppermost 0.5 mm of the sediment showed a peak photosynthetic activity in the study areas in spring. This is the first domestic report on photosynthetic rates of benthic microflora in the tidal flats with oxygen microsensors, and the use of the microsensor can be widely applied to measurements of benthic primary production of a tidal flat and the oxygen consumption rate of surficial sediments.