• 한국재료학회지
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• 제9권5호
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• pp.491-495
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• 1999

In this study, we focus on Ca contaminant which affects on the roughness Si substrate after thermal process. The initial Si substrates were contaminated intentionally by using a standard Ca solution. The contamination levels of Ca impurity were measured by TXRF and the chemical composition of that was analyzed by AES. Then we gre the thermal oxide to investigate the effect of Ca contaminants. The microroughness of the Si surface, the thermal oxide surface, and the surface after removing the thermal oxide were measured to examine the electrical characteristics. The initial substrates that were contaminated with the standard solution of Ca exhibited the contamination levels of 10\ulcorner~10\ulcorneratoms/$\textrm{cm}^2$ which was measured by TXRF. The Ca contaminants were detected by AES and exhibited the peaks of Ca, SI, C and O.After intentional contamination, the surface microroughness of this initial substrate was increased from $1.5\AA$ to 4$\AA$ as contamination levels became higher. The microroughness of the thermal oxide surfaces of both contaminated and bare Si substrates exhibits similar values. But the microroughness of the contaminated$ Si/SiO_2$ interface was increased as contamination increased. The thermal oxide of contaminated substrate exhibited the small minority carrier diffusion length, low breakdown voltage, and slightly high leakage current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1296-1299
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• 2004

MIM capacitor has been investigated for the next generation DRAM. Conventional poly-Si bottom electrode cannot satisfy the requirement of electrical properties and comparability to the high k materials. New bottom electrode material such as ruthenium has been suggested in the fabrication of MIM structure capacitor. However, the ruthenium has to be planarized due to the backend scalability. For the planarization CMP has been widely used in the manufacture of integrated circuit. In this research, ruthenium thin film was Polished by CMP with cerium ammonium nitrate (CAN)base slurry. HNO3 was added on the CAN solution as an additive. In the various concentration of chemical and alumina abrasive, ruthenium surface was etched and polished. After static etching and polishing, etching and removal rate was investigated. Also microroughness of surface was observed by AFM. The etching and removal rate depended on the concentration of CAN, and HNO3 accelerated the etching and polishing of ruthenium. The reasonable removal rate and microroughness of surface was achieved in the 1wt% alumina slurry.

• 한국세라믹학회지
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• 제40권8호
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• pp.770-776
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• 2003

(111) 및 (100) 단결정 실리콘 웨이퍼에 대하여 #140 mesh와 #600 mesh의 연삭숫돌을 사용하여 연삭가공을 행하고 가공에 의한 표면품위의 변화를 관찰하였다. 이를 위하여 Atomic Force Microscope(Am)을 사용하여 미세거칠기를 분석하고 라만 분광법(Raman spectroscopy)을 통하여 결정구조, 상변화 및 잔류응력을 분석하였다. 그 결과 연삭가공 후에 (111) 면에서 미세거칠기가 더 크게 나타났으며 실리콘이 다이아몬드구조의 Si-I에서 Si-III(body centered tetragonal) 및 Si-XII(rhombohedral)로 전이하는 현상을 라만스펙트럼 분석을 통해 확인하였다. 또한 연삭가공에 의하여 패인 구덩이에서는 일반적인 가공표면과 다른 라만스펙트럼이 관찰되어, 표면에 인가된 잔류응력이 새로운 표면생성으로 해소되었음을 알수 있었다. 또한 열처리에 의한 재료의 표면품위개선효과를 분석하기 위하여 대기 중에서 열처리를 시행한 결과 열처리는 잔류응력의 해소와 상전이의 회복에 효과적인 것으로 나타났다.

• 한국세라믹학회지
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• 제36권8호
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• pp.863-870
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• 1999

SOI(silicon on insulafor) was fabricated through the direct bonding using (100) Si wafer and 4$^{\circ}$off (100) Si wafer to investigate the stacking faults in silicon at the Si/SiO2 oxidized and bonded interface. The treatment time of wafer surface using MSC-1 solution was varied in order to observe the effect of cleaning on bonding characteristics. As the MSC-1 treating time increased surface hydrophilicity was saturated and surface microroughness increased. A comparison of surface hydrophilicity and microroughness with MSC-1 treating time indicates that optimum surface modified condition for time was immersed in MSC-1 for 2 min. The SOI structure directly bonded using (100) Si wafer and 4$^{\circ}$off (100) Si wafer at the room temperature were annealed at 110$0^{\circ}C$ for 30 min. Then the stacking faults at the bonding and oxidation interface were examined after the debonding. The results show that there were anomalies in the gettering of the stacking faults at the bonded region.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.107.4-107
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• 1998

• 펄프종이기술
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• 제32권5호
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• pp.26-43
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• 2000

It is well accepted that gloss variation deteriorates the print quality and there are various objective ways to measure this. Several studies now have shown that the coefficient of variation in the octave band passed printed gloss image has an excellent correlation with ratings by an expert panel using a magnitude estimation scaling method. The correlation improves when the gloss level is also taken into account beyond that of the COV. There is also evidence that the correlation would improve even more if the gloss spatial distribution could be better accounted for. We show that much (at least 80% and perhaps up to 90%) of the gloss distribution can be accounted for by the paper topography over a wide range of dimensions (scale). Recent work has supported the role that microroughness and multiple surface scattering play in the gloss distribution. This offers the promise of showing that even a greater amount of gloss variationcan be explained by topography.

• 한국광학회지
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• 제1권1호
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• pp.73-86
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• 1990

The technique of Spectroscopic Ellipsometry (SE) has been examined with emphasis on its inherent sensitivity to the existence of thin films or surface equivalents. A brief review of related theories like the Fresnel reflection coefficients, the effect of a multilayer upon reflectivities, together with the validity of the effective medium theory and the modelling procedure, is followed by a short description of the experimental setup of a rotating polarizer type SE as well as the necessful expressions which lead to tan and cos. Out of its numerous, successful applications, a few are exampled to convince a reader that SE can be applied to a variety of research fields related to surface, interface and thin films. Specifically, those are adsorption and/or desorption on metals or semiconductors, oxidation process, formation of passivation layers on an electrode, thickness determination, interface between semiconductor and its oxide, semiconductor heterojunctions, surface microroughness, void distribution of dielectric, optical thin films, depth profile of multilayered samples, in-situ or in-vitro characterization of a solid surface immersed in electrolyte during electrochemical, chemical, or biological treatments, and so on. It is expected that the potential capability of SE will be widely utilized in a very near future, taking advantage of its sensitivity to thin films or surface equivalents, and its nondestructive, nonperturbing characteristics.

• 한국광학회지
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• 제8권4호
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• pp.277-282
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• 1997

광학소자나 전자소자의 코팅에 많이 이용되고 있는 Diamond-like Carbon(DLC) 박막의 복소굴절율을 광학적 방법을 사용하여 구하였다. PECVD(Plasma enhanced CVD)법에 의해 Si(100)기판과 비정질실리카 기판위에 각각 성장시킨 DLC 박막을 분광타원해석기와 분광광도계를 이용하여 타원해석 스펙트럼과 광투과율 스펙트럼을 측정하고, Sellmeier 분산관계식과 양자역학적 진동자 모델을 이용하여 분석하였다. 비정질실리카 위에 증착된 DLC 박막의 광투과영역에서 분광타원해석분석으로 굴절률 및 박막의 유효두께를 구하고 광흡수영역에서 투과스펙트럼을 역방계산하여 소광계수를 구한 뒤, 이 소광계수 스펙트럼에 최적 근사하는 양자역학적 분산식의 계수들을 회귀분석법으로 결정하여 복소굴절율을 구하였다. 그리고 모델링방법을 타워해석 스펙트럼에 적용하여 Si기판과 비정질이산화규소 기판위에 증착된 DLC 박막의 조밀도, 표면거칠기 등 박막상수를 박막의 성장조건에 따라 분석하였다.

• 대한화학회지
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• 제47권6호
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• pp.608-613
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• 2003

Post-Oxide CMP(Chemical-Mechanical Polishing) 결과 실리콘 웨이퍼를 오염 시키고 있는 슬러리 입자의 세정 가능성을 조사하기 위하여DHF(Diluted HF)에 비이온성 계면 활성제인 PAAE(Polyoxyethylene Alkyl Aryl Ether), 비양성자성 용제인 DMSO(Dimethylsulfoxide) 와 초순수의 혼합물인 새로운 세정액을 제조하였다. 세정력을 평가하기 위해서 세정제 내에서 각각 다른 제타 포텐셜을 갖는 실리카($SiO_2$), 알루미나($Al_2O_3$)와 PSL(polystylene latex) 입자를 실리콘 웨이퍼 표면의 산화막에 인위적으로 오염시킨 후 실험에 이용하였다. 초음파하에서 세정액의 성능 평가 결과 본 세정기술은 효과적인 입자의 세정능력과 금속이온에 대한 세정 능력을 나타내고 있음을 확인하였다. 즉 기존의 APM($NH_4OH,\;H_2O_2$와 D.I.W의 혼합물)과 달리 상온에서 세정이 가능하고 세정과정이 단축 되었으며, 낮은 농도의 HF를 사용함으로써 최소의 에칭에 의하여 표면 거칠기를 감소시킬 수 있음을 보여주고 있다. 또한 주요 CMP 금속 배선 물질들에 대한 낮은 부식력으로 기존의 CMP 후 세정공정에 뿐만 아니라 차세대CMP 공정으로 각광 받고 있는 Copper CMP 에 대한 Brush 세정 공정의 보조 세정제로 본 세정제가 적용될 가능성이 있음을 확인하였다.

• Nuclear Engineering and Technology
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• 제21권3호
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• pp.165-170
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• 1989

준 동적 파괴가 일어나는 변형율속도 조건에서 A533B-1 원자로 압력용기강의 파괴인성 및 파괴저항특성에 미치는 변형율속도의 영향을 균열선단의 강 소성역 관찰 및 파면의 미세거칠기측정을 통해 연구하였다. 1/2T-CT 파괴시편에서 약 1.5mm 이하의 균열진전에 대해서는 소성일로 부터 구한 J와 수정 J가 거의 일치하였다. 파면의 미세거칠기로부터 구한 국부 변형율은 1.8-2.0 정도의 값을 나타내어 거시적으로 측정된 값보다 높은 값을 보여주었다. 이들 방법은 모두 변형율속도가 증가함에 따라 파괴인성은 증가하나 tearing modulus는 큰 변화가 없음을 보여주었다.