• Polymer(Korea)
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• v.33 no.1
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• pp.91-95
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• 2009

We fabricated the electromagnetic (EM) noise absorber films for high temperature use by blending a soft magnetic powder with poly(amide imide) (PAI). The EM noise absorber films of PAI/soft magnet composite were prepared by casting the solution of poly(amide amic acid)/soft magnet powder into glass substrate with casting applicator device and then thermal imidization. The obtained films were fully characterized and their physical properties including thermal behavior, thermal stability and mechanical properties were studied. The EM noise absorption ability was also investigated using micro-strip line method. At 1 GHz, the power loss of composite film with 150 ${\mu}m$ thickness was about 25%.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.2
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• pp.70-77
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• 2003

In this paper, analysis and measurement on coaxial connecter designed for packaging of microwave and micro strip transition structure are carried out. Even though researches on optimization of various kinds of transition structures have been conducted actively; however, the range of the application was very limited since they have been focused mainly on improvement of specific transmission line. Therefore, in this paper, we tried to analyze three kinds of substrates of which dielectric constants are 2,5,10 and are commercially used nowadays. Besides, we have confirmed reliability of FEM analysis, extracted equivalent circuit of transition area, found out factors determining extracted physical values, and made proof of electromagnetic variations for optimum characteristics. In addition, transition structure showing optimized characteristics on the basis of dielectric and microstrip structure was proposed. We reckon that the result of this research will apply with effect to transition design in microwave packaging development.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1083-1090
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• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.8 s.99
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• pp.815-824
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• 2005

In this paper, we proposed a new DGS(Defected Ground Structure) Doherty amplifier for IMT-2000 band. Originally, active load-pull analysis of a Doherty amplifier assumes ideal harmonic termination condition. However, there have been no papers considering this ideal harmonic termination condition. We obtained excellent improvements of efficiency, gain, maximum output power as well as superior size reduction of a Doherly amplifier by satisfying the overlooked assumption of ideal harmonic termination through the adaptation of DGS at the output transmission line of carrier and peaking amplifier that is essential for Doherty operation. The amount of both the 2nd and the 3rd harmonic rejection of the proposed DGS Doherty amplifier over the conventional one are 44.92 dB and over 23.77 dB, respectively. The acquired improvement in Pl dB, gain, drain efficiency, and ACPR to WCDMA 1FA signal were 0.42 dB, 0.33 dB, $6.4\%$ and 5.4 dBc, respectively. Moreover, electrical length of $90{\circ}$ is reduced at each of the DGS carrier amplifier path and DGS peaking amplifier path, therefore the whole amplifier circuit size is considerably reduced.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.1
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• pp.77-83
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• 2011

In this thesis, 50W Doherty amplifier was designed and implemented for Beyond 3G's repeater and base-station. Auxiliary amplifier of doherty amplifier was implemented by Gate bias control circuit. Though gate bias control circuit solved auxiliary's bias problem, output characteristics of doherty amplifier was limited. To enhance the output characteristic relativize Drain control circuit And To improve power efficiency make 3-way Doherty power amplifier. therefore, 3-way GDCD (Gate and Drain bias Control Doherty) power amplifier is embodied to drain bias circuit for General Doherty power amplifier. The 3-way GDCD power amplifier composed of matching circuit with chip capacitor and micro strip line using FR4 dielectric substance of specific inductive capacity(${\varepsilon}r$) 4.6, dielectric substance height(H) 30 Mills, and 2.68 Mills(2 oz) of copper plate thickness(T). Experiment result satisfied specification of amplifier with gains are 57.03 dB in 2.11 ~ 2.17 GHz, 3GPP frequency band, PEP output is 50.30 dBm, W-CDMA average power is 47.01 dBm, and ACLR characteristics at 5MHz offset frequency band station is -40.45 dBc. Especially, 3-way DCHD power amplifier showed excellence efficiency performance improvement in same ACLR than general doherty power amplifier.