• Title/Summary/Keyword: Micro-display

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Optimization of Optical Structure of Lightguide Panel for Uniformity Improvement of Edge-lit Backlight (엣지형 LED 백라이트의 균일도 향상을 위한 도광판의 광구조 최적화)

  • Lee, Jung-Ho;Nahm, Kie-Bong;Ko, Jae-Hyeon;Kim, Joong-Hyun
    • Korean Journal of Optics and Photonics
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    • v.21 no.2
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    • pp.61-68
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    • 2010
  • Optical simulation methods were applied to the edge-lit LED backlight for LCD TV applications in order to optimize the optical structure of the light guide plate(LGP), and thus to improve the uniformity properties by removing the bright spots caused by LED's. The edge-lit LED backlight consisted of three white LED's with a lamp cover, a light guide plate, and a reflection film. When there was no pattern on the entrance side surface of the LGP, the illuminance uniformity was sensitively dependent on the distance d between the LED and the entrance surface. The illuminance uniformity increased with d but its increasing rate slowed down when d was beyond ~ 1.5 mm. When micro-patterns such as a lenticular lens array (LLA) or a serration pattern were formed on the entrance surface, the illuminance uniformity was improved substantially even for the case of very small d. At the same simulation condition, the lightguide with serration pattern showed a better uniformity than that with LLA pattern. Additional improvement could be achieved by changing the refractive index of the micro-patterns. These results suggest that using micro-patterns is a very effective way to reduce the bright spots due to their refracting function for the concentrated incident rays onto the LGP.

Room-temperature Bonding and Mechanical Characterization of Polymer Substrates using Microwave Heating of Carbon Nanotubes (CNT 마이크로파 가열을 이용한 고분자 기판의 상온 접합 및 기계적 특성평가)

  • Sohn, Minjeong;Kim, Min-Su;Ju, Byeong-Kwon;Lee, Tae-Ik
    • Journal of the Microelectronics and Packaging Society
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    • v.28 no.2
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    • pp.89-94
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    • 2021
  • The mechanical reliability of flexible devices has become a major concern on their commercialization, where the importance of reliable bonding is highlighted. In terms of component materials' properties, it is important to consider thermal damage of polymer substrates that occupy large area of the flexible device. Therefore, room temperature bonding process is highly advantageous for implementing flexible device assemblies with mechanical reliability. Conventional epoxy resins for the bonding still require curing at high temperatures. Even after the curing procedure, the bonding joint loses flexibility and exhibits poor fatigue durability. To solve this problems, low-temperature and adhesive-free bonding are required. In this work, we develop a room temperature bonding process for polymer substrates using carbon nanotube heated by microwave irradiations. After depositing multiple-wall carbon nanotubes (MWNTs) on PET polymer substrates, they are heated locally with by microwave while the entire bonding specimen maintains room temperature and the heating induces mechanical entanglement of CNT-PET. The room temperature bonding was conducted for a PET/CNT/PET specimen at 600 watt of microwave power for 10 seconds. Thickness of the CNT bonding joint was very thin that it obtains flexibility as well. In order to evaluate the mechanical reliability of the joint specimen, we performed lap shear test, three-point bending test, and dynamic bending test, and confirmed excellent joint strength, flexibility, and bending durability from each test.

Fabrication and Operating Properties of Nb Silicide-coated Si-tip Field Emitter Arrays (니오비움 실리사이드가 코팅된 실리콘 팁 전계 방출 소자의 제조 및 동작 특성)

  • Ju, Byeong-Kwon;Park, Jae-Seok;Lee, Sangjo;Kim, Hoon;Lee, Yun-Hi;Oh, Myung-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.7
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    • pp.521-524
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    • 1999
  • Nb silicide was formed on the Si micro-tip arrays in order to improve field emission properties of Si-tip field emitter array. After silicidization of the tips, the etch-back process, by which gate insulator, gate electrode and photoresist were deposited sequentially and gate holes were defined by removing gradually the photoresist by $O_2$ plasma from the surface, was applied. Si nitride film was used as a protective layer in order to prevent oxygen from diffusion into Nb silicide layer and it was identified that the NbSi2 was formed through annealing in $N_2$ ambient at $1100^{\circ}C$ for 1 hour. By the Nb silicide coating on Si tips, the turn-on voltage was decreased from 52.1 V to 32.3 V and average current fluctuation for 1 hour was also reduced from 5% to 2%. Also, the fabricated Nb silicide-coated Si tip FEA emitted electrons toward the phosphor and light emission was obtained at the gate voltage of 40~50 V.

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A Study of Developing Wear Tester to Measure and Minimize Particle Levels in Cleanroom (장비 구동부품 기인 Particle 평가를 위한 마모측정기의 개발에 관한 연구)

  • Park, Kwang Hee;Noh, Kwonhak;Chang, Sung Ho;Lee, Jonghwan;Cha, Young Cheul;Chun, Hae Dong
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.36 no.2
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    • pp.1-7
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    • 2013
  • Cleanroom could be largely classified into industrial cleanroom that can be contaminated by particles and bio-cleanroom that can be contaminated by biological particles. Electrical manufacturing companies producing precision machines and electrical parts essentially have industrial cloom facilities and clean technologies to produce defects free products due to particles. Industrial cleanroom should be controlled in respect of 4M1E to prevent from foreign materials of sub-micro unit and to keep out contamination sources from outside. In this paper, a concept for a quantitative methodology to measure the particles from running components was suggested by combining both newly making clean booth such as wear tester and laser particle counter.

Study on the gate cutting of light guiding plate for mobile using quenching element (박형 도광판의 음각, 양각 마이크로 패턴 성형성에 관한 연구)

  • Hwang, Chul-Jin;Kim, Jong-Sun;Min, In-Gi;Kim, Jong-Dug;Yoon, Kyung-Hwan
    • Design & Manufacturing
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    • v.2 no.5
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    • pp.1-4
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    • 2008
  • LCD-BLU (Liquid Crystal Display - Back Light Unit) is one of kernel parts of LCD unit and it consists of several optical sheets(such as prism, diffuser and protector sheets), LCP (Light Guide Plate), light source (CCFL or LED) and mold frame. The LGP of LCD-BLU is usually manufactured by forming numerous dots with $50-200{\mu}m$ in diameter on it by erosion method. But the surface of the erosion dots of LGP is very rough due to the characteristics of the erosion process during the mold fabrication, so that its light loss is high along with the dispersion of light into the surface. Accordingly, there is a limit in raising the luminance of LCD-BLU. Especially, the negative and positive micro-lens pattern fabricated by modified LiGA with thermal reflow process was applied to the optical design of LGP.

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Measurement of excited Xe($1s_4$) and Xe($1S_5$) atoms by laser absorption spectroscopy in coplanar AC-PDP

  • Oh, P.Y.;Lee, J.H.;Moon, H.S.;Hong, J.W.;Jeon, W.;Cho, G.S.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.515-517
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    • 2004
  • The laser absorption spectroscopy has been used for measuresurement of the xenon atoms in the resonant $1S_4$ and metastable $1S_5$ states in coplanar AC PDP. For the purpose of improving VUV luminous efficiency and optimization of PDP cells, it is important to study behavior of excited Xe atoms in a micro-discharge cell of a coplanar AC-PDP. We measured the xenon excited density of $1S_5$ and $1S_4$ state under mixture gas of Ne-Xe(10%) with gas pressure of 350 Torr and sustaining gap distance of 150 um.

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Laser crystallization of Si film for poly-Si thin film transistor on plastic substrates

  • Kwon, Jang-Yeon;Cho, Hans-S;Kim, Do-Young;Park, Kyung-Bae;Jung, Ji-Sim;Park, Young-Soo;Lee, Min-Chul;Han, Min-Koo;Noguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.957-961
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    • 2004
  • In order to realize high performance thin film transistor (TFT) on plastic substrate, Si film was deposited on plastic substrate at 170$^{\circ}C$ by using inductivity coupled plasma chemical vapor deposition (ICPCVD). Hydrogen concentration in as-deposited Si film was 3.8% which is much lower than that in film prepared by using conventional plasma enhanced chemical vapor deposition (PECVD). Si film was deposited as micro crystalline phase rather than amorphous phase even at 170$^{\circ}C$ because of high density plasma. By step-by-step Excimer laser annealing, dehydrogenation and recrystallization of Si film were carried out simultaneously. With step-by-step annealing and optimization of underlayer structure, it has succeeded to achieve large grain size of 300nm by using ICPCVD. Base on these results, poly-Si TFT was fabricated on plastic substrate successfully, and it is sufficient to drive pixels of OLEDs, as well as LCDs.

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Pentacene Thin Film Transistors Fabricated by High-aspect Ratio Metal Shadow Mask

  • Jin, Sung-Hun;Jung, Keum-Dong;Shin, Hyung-Chul;Park, Byung-Gook;Lee, Jong-Duk;Yi, Sang-Min;Chu, Chong-Nam
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.881-884
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    • 2004
  • The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

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Crystallization of Sil-xGex Films Using Field Aided Lateral Crystallization Method (전계 유도 방향성 결정화법을 이용한 Sil-xGex 박막의 결정화)

  • 조기택;최덕균
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.73-73
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    • 2003
  • 최근 LCD(liquid crystal display)분야에서 고해상도와 빠른 응답속도를 가지는 다결정 실리콘 박막트랜지스터에 대한 연구를 하고 있다. 그러나, poly-Si은 poly-Sil-xGex에 비해 intrinsic carrier mobility가 낮고 고온의 결정화 공정을 필요로 한다. 따라서, Poly-Si을 대체할 재료로 poly-SiGe에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 전계에 의해 결정화가 가속되고 한쪽 방향으로 결정화를 제어하여 채널내 전자나 정공의 이동도를 향상시 킬 수 있는 새로운 결정화 방법인 전계 유도 방향성 결정화법을 이용하여 Ge 함량에 따른 a-Sil-xGex(0$\leq$x$\leq$0.5)의 결정화 특성을 연구하였다. 대기압 화학 기상 증착법으로 5000$\AA$의 산화막(SiO$_2$)이 증착된 유리 기판상에 플라즈마 화학 기상 증착법을 이용하여 800$\AA$의 비정질 실리콘을 증착한 후 RF magnetron sputtering법을 이용하여 Ge 함량에 따른 Sil-xGex 박막을 1000$\AA$ 증착하였다. Photolithograph방법을 이용하여 금속이 선택적으로 증착될 수 있는 특정 Pattern을 가진 mask를 형성한 후 금속을 DC magnetron sputtering법을 이용하여 상온에서 50$\AA$.을 증착하였다. 이후 시편에 전계를 인가하기 위해 시편의 양단에 전극을 형성한 후 DC Power Supply를 통해 전압을 제어하는 방식으로 전계를 인가하였다. 결정화 속도는 광학현미경을 이용하여 분석하였으며 결정화된 영역의 결정화 정도는 micro-Raman spectroscopy로 분석하였다.

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Realtime Digital Monitoring and Controller Development for Power Systems (전력시스템의 실시간 디지털 중앙감시 및 제어장치 개발)

  • Jong-Dug Cho;Sun-Hag Hong
    • Journal of the Korea Computer Industry Society
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    • v.2 no.12
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    • pp.1517-1522
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    • 2001
  • In this paper, We propose digital protective relay which monitors the status of distribution line and controls power apparatus with real time operation. Digital protective relay improves the performance of basic functions which are measurement, display and communication. The Int one we consider is that the protective device has the standard method for protecting the distribution systems which are circuit brakers, switch and emergency generators. These are Protected by analog type Protective relay and devices. The security requirements should be activated within a few seconds, and with real time operation. The second one is an efficient method for adapting the one chip micro-processor(PIC16F84) which is enable to digital control system. The proposed methods are implemented with experimental results and have an high fidelity characteristics in local experiment tests.

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