• Journal of Radiation Protection and Research
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• v.29 no.1
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• pp.25-31
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• 2004

Results of EGS4 based calculations to study the spatial resolution of gas detectors are described. The calculations include radial distribution of electrons generated by photons of various energies penetrating into variable thickness of Ar and Xe gas layers. Given a desired spatial resolution, the maximum allowed thickness of gas layer for each energy level is determined. In order to obtain 0.1mm spatial resolution, the maximum thickness for the Ar gas is found to be 2mm for photon energies below 14keV while the optimum energy of photons for Xe gas with the same thickness is about 45keV. The results of calculations performed to compare the number of electrons generated by CsI coated micro-channel plate and the number of electrons generated by the Ar and Xe gas layers are described. The results show that the number of electrons generated by the gases is about 10 times higher than the one generated by CsI coated micro-channel plate. A few sample gray scale images generated by these calculations are included.

• Journal of Biomedical Engineering Research
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• v.28 no.1
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• pp.95-101
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• 2007

Recently, small-animal imaging technology has been rapidly developed for longitudinal screening of laboratory animals such as mice and rats. One of newly developed imaging modalities for small animals is an x-ray micro-CT (computed tomography). We have developed two types of x-ray micro-CT systems for small animal imaging. Both systems use flat-panel x-ray detectors and micro-focus x-ray sources to obtain high spatial resolution of $10{\mu}m$. In spite of the relatively large field-of-view (FOV) of flat-panel detectors, the spatial resolution in the whole-body imaging of rats should be sacrificed down to the order of $100{\mu}m$ due to the limited number of x-ray detector pixels. Though the spatial resolution of cone-beam CTs can be improved by moving an object toward an x-ray source, the FOV should be reduced and the object size is also limited. To overcome the limitation of the object size and resolution, we introduce zoom-in micro-tomography for high-resolution imaging of a local region-of-interest (ROI) inside a large object. For zoom-in imaging, we use two kinds of projection data in combination, one from a full FOV scan of the whole object and the other from a limited FOV scan of the ROI. Both of our micro-CT systems have zoom-in micro-tomography capability. One of both is a micro-CT system with a fixed gantry mounted with an x-ray source and a detector. An imaged object is laid on a rotating table between a source and a detector. The other micro-CT system has a rotating gantry with a fixed object table, which makes whole scans without rotating an object. In this paper, we report the results of in vivo small animal study using the developed micro-CTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• Progress in Superconductivity
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• v.12 no.1
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• pp.41-45
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• 2010

Low temperature micro-calorimeters have been employed in the field of high resolution alpha spectrometers. These alpha detectors typically consist of a superconducting or metal absorber and a temperature sensor. The temperature sensor can be a transition edge sensor (TES), a metallic magnetic calorimeter (MMC) or other low temperature detectors for an accurate measurement of temperature change due to an alpha particle absorption. We report a recent study of the heat flow between a replaceable absorber and a temperature sensor. A piece of gold foil in $2.4{\times}2.7{\times}0.03\;mm^3$ is used as an absorber. A $40\;{\mu}m$ diameter Au:Er paramagnetic sensor is attached to another small piece of gold foil in $400{\times}200{\times}30\;{\mu}m^3$ to serve as the temperature sensor. This sensor assembly, Au:Er and gold foil, is placed on a miniature SQUID susceptometer in a gradiometric configuration. The thermal connection between the absorber and the sensor was made with three gold bonding wires. The measured thermal conductance shows a linear dependence to the temperature. The values are in a good agreement with Wiedemann-Franz type thermal conductance of the gold wires.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.3
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• pp.428-435
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• 2002

Pyroelectric $Pb(Zr_{0.3}Ti_{0.7})O_3$ (PZT30/70) thin film IR detectors has been fabricated and characterised. The PZT30/70 thin film was deposited onto $Pt/Ti/Si_3N_4/SiO_2/Si$ substrate by the sol-gel process. Four different substrate conditions were studied for their effects on the pyroelectric responses of the IR detectors. The substrate conditions were the combinations of the Si etching and the Pt/Ti patterning. In the Si etched substrate, the $Si_3N_4/SiO_2$ composite layer was used as silicon etch-stop, and was used as the membrane to support the PZT pyroelectric film element as well. The measured pyroelectric current and voltage responses of detectors fabricated on the micro-machined thin $Si_3N_4/SiO_2$ membrane were two orders higher than those of the detectors on the bulk-silicon. For detectors on the membrane substrate, the Pt/Ti patterned detectors showed a 2-times higher pyroelectric response than that of not-patterned detectors. On the other hand, the pyroelectric response of the detectors on the not-etched Si substrate was almost the same, regardless of the Pt/Ti patterning. It was also found that the rise time strongly depended on the substrate thickness: the thicker the substrate was, the longer the rise-time.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.39.1-39
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• 2002

We present nanoactuators and nanodetectors for high-precision Micro Electro Mechanical System (MEMS) applications. Major technical difficulties in the high-precision MEMS are arising from the fabrication uncertainty and electrical noise problems. In this paper, we present high-precision actuators and detectors, overcoming the technical limitations placed by the conventional MEMS technology. For the nano-precision actuation, we present a nonlinearly modulated digital actuator (NMDA). NMDA composed of a digital microactuator and a nonlinear micromechanical modulator. The nonlinear micromechanical modulator is intended to purify the actuation errors in the stroke of the digital a...

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3121-3125
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• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

• Journal of Radiation Protection and Research
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• v.34 no.1
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• pp.25-30
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• 2009

Micro-columnar CsI(Tl) is the most popular scintillator material which is used for many indirect digital X-ray imaging detectors. The light scattering at the surface of micro-columnar CsI(Tl) scintillator was studied to find the correlation between the surface roughness and the resultant image resolution of indirect X-ray imaging detectors. Using a commercially available optical simulation program, Light Tools, MTF (Modulation Transfer Function) curves of the CsI(Tl) film thermally evaporated on glass substrate with different thickness were calculated and compared with the experimental estimation of MTF values by the edge X-ray image method and CCD camera. It was found that the standard deviation value of Gaussian scattering model which is determined by the surface roughness of micro-columns could certainly change the MTF value of image sensors. This model and calculation methodology will be beneficial to estimate the overall performance of indirect X-ray imaging system with CsI(Tl) scintillator film for optimum design depending on its application.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.