• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.8
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• pp.1075-1079
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• 2014

In this paper, we describe the analysis and the compensation method of the g-sensitivity error for MEMS vibratory gyroscopes. Usually, the g-sensitivity error has been ignored in the commercial MEMS gyroscope, but it deserves our attention to apply for the missile application as a tactical grade performance. Thus, it is necessary to compensate for the g-sensitivity error to reach a tactical grade performance. Generally, the g-sensitivity error seems intuitively to be a gyroscope bias error proportional to the linear acceleration. However, we assert that the g-sensitivity error mainly causes not a bias error but a scale-factor error. And we verify that the g-sensitivity scale-factor error occurs due to the non-linearity of parallel plate electrodes. Therefore, we propose the compensation method to remove the g-sensitivity scale-factor error. The experimental result showed that a proposed compensation method improved successfully the performance of the MEMS vibratory gyroscope.

• 전기의세계
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• v.41 no.11
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• pp.8-15
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• 1992

요즘 자기 스스로 움직이면서 간단한 동작을 명령대로 수행하는 마이크로 머신을 만드는 꿈과같은 이야기를 현실에 한발 가까이 하는 연구가 활발히 진행되고 있다. 즉, IC칩을 제작하는 미세반도체 소자 제조공정으로 수십 내지는 수백미크론 크기의 기계구조물이나 모터, 액츄에이터를 실리콘 기판 위에 제작하는 것이 가능하게 되었다. 이러한 연구분야는 1980년대 중반부터 미국, 일본, 유럽등지에서 시작되었다. 이 연구분야를 IEEE에서는 MEMS(Micro Electro Mechanical Systems)라 부르며, 매년 2월 IEEE주최로 이에 관한 International conference가 열리고 있고, 이분야에 대한 Journal도 1992년부터 발행하고 있다. MEMS를 미국에서는 NSF(National Science Foundation)에서 일본에서는 통산성에서 지원하고 있으며 현재 재료, 제작기술, 소자(센서, 액츄에이터), 시스템, 응용, 마이크로 이공학등에 관한 연구가 진행되고 있다. 이 분양의 파급효과는 의공학이나 유전자공학 뿐만이 아니라 공학에도 매우 크리라 예상된다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.156-156
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• 2004

정보화 및 휴대화 시대에 있어서 폭증하는 정보량을 보다 작은 용기에, 보다 많이 그리고 보다 저렴하게 저장하기 위해서는, 기존 저장기기의 한계를 극복할 수 있는 새로운 개념의 차세대 정보 저장기기가 요구되어 진다. 나노미터 사이즈의 주사탐침이 기록매체표면에 근접하여 정보를 기록/재생하는 PSD는 상기한 저장기기의 대용량화, 소형화, 그리고 저가격화를 충족시킬 수 있는 신개념의 저장기기로, 그 기술적 근간을 SPM(Scanning Probe Microscope)기술과 MEMS(Micro Electro Mechanical Systems) 제작기술에 두고 있다.(중략)

• Bulletin of the Korean Space Science Society
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• 2009.10a
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• pp.47.3-47.3
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• 2009

UFFO (Ultra Fast Flash Observatory)는 매우 빠른 가시광/자외선 망원경으로서 MEMS (Micro-Electro-Mechanical Systems) 미세거울을 이용하여 관측대상을 1밀리초 이내에 포착해 낼 수 있다. 이를 이용하여 감마선 폭발의 초기 가시광/자외선을 측정하여, 트리거 이후 1밀리초 이내의 광신호에 대한 연구가 가능할 것이다. 이 발표에서는 UFFO의 개념과 디자인을 소개하고, 시뮬레이션과 망원경 시험제작 및 테스트결과를 발표할 것이다.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.77-81
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• 2020

Silicon wafer etching in micro electro mechanical systems (MEMS) fabrication is challenging to form 3-D structures. Well known Si-wet etch of silicon employs potassium hydroxide (KOH), tetramethylammonium hydroxide (TMAH) and sodium hydroxide (NaOH). However, the existing silicon wet etching process has a fatal disadvantage that etching of the back side of the wafer is hard to avoid. In this study, a wet etching bath for 150 mm wafers was designed to prevent back-side etching of silicon wafer, and we demonstrated the optimized process recipe to have anisotropic wet etching of silicon wafer without any damage on the backside. We also presented the design of wet bath for 300 mm wafer processing as a promising process development.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1414-1415
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• 2006

Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.89-92
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• 2010

A bolometer sensor used in an infrared thermal imaging system has many advantages on the process because it does not need a separate cooling system and its manufacturing is easy. However the sensitivity of the bolometer is low and the fixed pattern noise(FPN) is large, because the bolometer sensor is made by micro electro mechanical systems (MEMS). These problems can be fixed-by using the high performance readout integrated circuit(ROIC) with noise reduction techniques. In this paper, we propose differential delta sampling circuit to remove the mismatch noise of ROIC itself, the FPN of the bolometer. And for reduction of FPN noise, the reference signal compensation circuit which compensate the reference signal by using on-resistance of MOS transistor was proposed.

• Journal of Electrical Engineering and Technology
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• v.9 no.3
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• pp.950-956
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• 2014

Special purpose sensor design using MEMS (Micro-Electro-Mechanical Systems) technique is commonly used in Nondestructive Testing (NDT) research for the evaluation of existing structures and for the safety control and requirements. Various sensors and network have been developed for general infrastructures as well as safety-critical applications, e.g., aerospace, defense, and nuclear system, etc. In this paper, one of sensor technique using Fiber Bragg Gratings (FBG) and Finite Element Method (FEM) evaluation is discussed. The experimental setup and data collection technique is also demonstrated. The factors influencing test result and the advantages/limitations of this technique are also reviewed using various methods.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.177-181
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• 2000

The tunneling current is exponentially dependent on the separation gap between a pair of conductors. The detection of displacement can be, therefore, carried out by measurment of a variation in the tunneling current. In this experiment, we fabricated pyramid-type silicon tunneling devices in which a tunneling current flow between a micro-tip and $Si_3N_4$ thin film membrane. A MEMS process was used for the fabrication of the tunneling devices. The micro-tips were formed on Si wafers by undercutting a differently oriented square of $SiO_2$ with KOH. The stiffness of the $Si_3N_4$ films were observed and the model for the stiffness calculation, which is useful in predicting the stiffness even when the stiffness ranges beyond the scope of the normal experimental condition, was suggested.