• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2010년도 춘계학술대회 논문집
• /
• pp.229-230
• /
• 2010

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2002년도 춘계학술대회 논문집
• /
• pp.914-917
• /
• 2002

Fabrication of micro carbon structures and patterns using laser-assisted chemical vapor deposition is studied. Argon ion laser and ethylene were used to grow micro carbon rod through pyrolytic decomposition of the reaction gas. The influence of reaction gas pressure and incident laser power on the diameter and growth rate of the micro carbon rod was experimentally investigated. The diameter of micro carbon rods increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below 1W. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 28 ${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated.

• 한국전기전자재료학회논문지
• /
• 제22권8호
• /
• pp.682-688
• /
• 2009

A periodic away of zinc oxide(ZnO) micro-rods as fabricated by using chemical bath deposition and photo-lithography. Vertically aligned ZnO micro-rods array was successfully grown by chemical bath deposition method on ZnO seed layer. The ZnO seed layer was deposited on glass and the patterning was made by standard photo-lithography technique. The selective growth of ZnO micro-rods as achieved with the masked ZnO seed layer. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO seed layer.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.149-150
• /
• 2000

Lead-doped calcium sulfide(CaS:Pb) thin film electroluminescent devices were deposited using atomic layer deposition(ALD). CaS:Pb is a very promising blue phosphor showing very high luminance and the color coordinate close to the blue of cathode ray tube. The luminance, $L_{25}$, of CaS:Pb(1.6 mol.%) EL device was higher than 80 $cd/cm^2$ at a driving frequency of 60Hz. The color coordinates of blue EL emission of CaS:Pb deposited by ALD are consistent with the Pb concentration ranging from approximately 0.5 to 3 mol.%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.459-460
• /
• 2008

Zinc oxide micro rods were fabricated using as chemical bath deposition ok photolithography. Vertically aligned Zinc Oxide rod array as grown by chemical bath deposition method on Zinc Oxide template layer. The ZnO template layer was deposited on glass and the pattering was made by standard photolithography technique. The selective growth of ZnO micro rods were achieved with the masked ZnO template layer substrate. The fabricated ZnO micro rods were found to be single crystalline and have grown along hexagonal c-axis direction of (0002) which is same as the preferred growth orientation of ZnO template layer. The ZnO micro-rod array structure was implemented as a window layer in Cu(InGa)Se2 solar cell and its effect on photovoltaic efficiency was examined.

• 한국레이저가공학회지
• /
• 제5권2호
• /
• pp.17-22
• /
• 2002

Characteristics of micro carbon structures fabricated with laser-induced chemical vapor deposition (LCVD) are investigated. An argon ion laser (λ＝514.5nm) and ethylene gas were utilized as the energy source and precursor, respectively. The laser beam was focused onto a graphite substrate to produce carbon deposit through thermal decomposition of the precursor. Average growth rate of a carbon rod increased for increasing laser power and pressure. Micro carbon rods with good surface quality were obtained at near the threshold condition. Micro carbon rods with aspect ratio of about 100 and micro tubular structures were fabricated to demonstrate the possible application of this method to the fabrication of three-dimensional microstructures. Laser Raman spectroscopic analysis of the micro carbon structures revealed that the carbon rods are consisting of amorphous carbon.

• 한국재료학회지
• /
• 제15권11호
• /
• pp.705-710
• /
• 2005

NIL (nanoimprint lithography) technique has demonstrated a high potential for wafer size definition of nanometer as well as micrometer size patterns. During the replication process by NIL, the stiction between the stamp and the polymer is one of major problems. This stiction problem is moi·e important in small sized patterns. An antistiction layer prevents this stiction ana insures a clean demolding process. In this paper, we were using a TCP (transfer coupled plasma) equipment and $C_4F_8$ as a precursor to make a Teflon-like antistiction layer. This antistiction layer was deposited on a 6 inch silicon wafer to have nanometer scale thicknesses. The thickness of deposited antistiction layer was measured by ellipsometry. To optimize the process factor such as table height (TH), substrate temperature (ST), working pressure (WP) and plasma power (PP), we were using a design of experimental (DOE) method. The table of full factorial arrays was set by the 4 factors and 2 levels. Using this table, experiments were organized to achieve 2 responses such as deposition rate and non-uniformity. It was investigated that the main effects and interaction effects between parameters. Deposition rate was in proportion to table height, working pressure and plasma power. Non-uniformity was in proportion to substrate temperature and working pressure. Using a response optimization, we were able to get the optimized deposition condition at desired deposition rate and an experimental deposition rate showed similar results.

• International Journal of Precision Engineering and Manufacturing
• /
• 제7권4호
• /
• pp.18-22
• /
• 2006

Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.

• 열처리공학회지
• /
• 제6권4호
• /
• pp.223-229
• /
• 1993

Extensive reseach has been performed on the process condition-micro structure-stress relations of TiN film. The various proposed models are mainly base on physical vapor deposition processes. Especially the study on the micro-structure and deposition condition has not been sufficient in TiN deposited by PECVD. In this study, therefore, we discussed the morphological changes of TiN films by PECVD with different temperature and pressure, and compared it with the structure zone model. We could find out that the oxygen and chlorine contents and the texture coefficient increased with deposition temperature, and the morphology of TiN transformed from Zone 1 to Zone T, but deposition pressure didn't remarkly affected.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1119-1122
• /
• 2005

A selective deposition of Co thin films for thin film transistor gate electrode has been carried out by the growth with combination of micro-contact printing and metal organic chemical vapor deposition (MOCVD). This results in the elimination of optical lithography process. MOCVD has been employed to selectively deposit Co films on preformed OTS gate pattern by using micro-contact printing (${\mu}CP$). A hydrogenated amorphous silicon TFT with a Co gate selectively formed on SAMs patterned structure exhibited a subthreshold slope of 0.88V/dec, and mobility of $0.35cm^2/V-s$, on/off current ratio of $10^6$, and a threshold voltage of 2.5V, and thus demonstrating the successful application of the novel bottom-up approach into the fabrication of a-Si:H TFTs.