• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.965-968
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• 2007

The effect of the modification of the front surfaces of flat fluorescent lamps (FFLs) on the light-output distribution has been investigated by using a ray tracing method and several kinds of microlenses. It was found that microlenses have substantial effects on the light-output distribution, which might be used to reduce the number of optical films in the FFL-backlight unit for LCD applications.

• Journal of the Optical Society of Korea
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• v.20 no.6
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• pp.669-677
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• 2016

A miniaturized FTIR spectrometer based on lamellar grating interferometry is being developed for passive remote-sensing. Consisting of a pair of micro-mirror arrays, the lamellar grating can be fabricated using MEMS technology. This paper describes a method to compute the optical field in the interferometer to optimize the design parameters of the lamellar grating FTIR spectrometer. The lower limit of the micro-mirror width in the grating is related to the formation of a Talbot image in the near field and is estimated to be about $100{\mu}m$ for the spectrometer to be used for the wavelength range of $7-14{\mu}m$. In calculating the far field at the detection window, the conventional Fraunhofer equation is inadequate for detection distance of our application, misleading the upper limit of the micro-mirror width to avoid interference from higher order diffractions. Instead, the far field is described by the unperturbed plane-wave combined with the boundary diffraction wave. As a result, the interference from the higher order diffractions turns out to be negligible as the micro-mirror width increases. Therefore, the upper limit of the micro-mirror width does not need to be set. Under this scheme, the interferometer patterns and their FT spectra are successfully generated.

• Journal of the Korean Society of Industry Convergence
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• v.26 no.4_1
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• pp.517-527
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• 2023

Many techniques have been proposed and investigated for microlens array manufacturing in three-dimensional (3D) structures. We present fabricating a microlens array using selective laser etching and a CO₂ laser. The femtosecond laser was employed to produce multiple micro-cracks that comprise the predesigned 3D structure. Subsequently, the wet etching process with a KOH solution was used to produce the primary microlens array structures. To polish the nonoptical surface to the optical surface, we performed reflow postprocessing using a CO₂ laser. We confirmed that the micro lens array can be manufactured in three primary shapes (cone, pyramid and hemisphere). Compared to our previous study, the processing time required for laser processing was reduced from approximately 1 hour to less than 30 seconds using the proposed processing method. Therefore, micro lens arrays can be manufactured using our processing method and can be applied to mass productionon large surface areas.

• Electronics and Telecommunications Trends
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• v.34 no.2
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• pp.10-18
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• 2019

Since the introduction of CRT(Cathode Ray Tube) in the 1950s, display technologies have been developed continuously. Flat panel displays such as PDP(Plasma Display Panel) and LCD(Liquid Crystal Display) were commercialized in the late 1990s, and OLED(Organic Light Emitting Diodes) and Micro-LED(Micro-Light Emitting Diodes) are now being developed and are becoming widespread. In the future, we expect to develop ultra-realistic, flexible, embedded sensor displays. Ultra-realistic display can be applied to AR/VR(Augmented Reality/Virtual Reality) devices and spatial light modulators for holography. The sensor-embedded display can be applied to robots; electronic skin; and security devices, including iris recognition sensors, fingerprint recognition sensors, and tactile sensors. AR/VR technology must be developed to meet technical requirements such as viewing angle, resolution, and refresh rate. Holography requires optical modulation technology that can significantly improve resolution, viewing angle, and modulation method to enable wide-view and high-quality hologram stereoscopic images. For electronic skin, stable mass production technology, large-area arrays, and system integration technologies should be developed.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.1
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• pp.63-68
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• 2015

Micro/nano patterns for optical concentration and diffusion have been studied in the various fields such as displays, optics, and sensors. Conventional micro patterns were continuous and linear shapes due to using linear-type light sources, however, recently non-continuous patterns have been applied as point sources are used for dot-type light sources such as LEDs and OLEDs. In this study, a hybrid machining technology combining an indentation machining method and an AAO process was developed for manufacturing the non-continuous micro patterns having nano patterns. First, mirror-like surfaces ($R_a<20nm$) of pure Aluminum substrates were obtained by optimizing cutting conditions. Then, The letter of 'K' consisting of the arrays of the micro patterns was manufactured by the indentation machining method which has a similar principle to indentation hardness testing. Finally, nano patterns were machined by AAO process on the micro patterns. Conclusively, a specific letter having nano-micro hybrid patterns was manufactured in this study.

• Korean Journal of Optics and Photonics
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• v.24 no.2
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• pp.53-57
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• 2013

A polarization selective blazed grating employing metal-slit arrays was proposed. Nano-scale metal-slits were applied to the micro-scale blazed grating to give the functionality of polarization selection. Case study was carried out for the proposed structure utilizing numerical FDTD (Finite Difference Time Domain method) simulation. Diffraction efficiency of 77.61% and polarization extinction ratio of 8.99 was achieved with arbitrary parameters and diffraction efficiency of 64.22% and polarization extinction ratio of 81.09 was achieved with other parameters to enhance extinction ratio.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.108-115
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• 2018

The increasing demands for three-dimensional (3D) electronic and optoelectronic devices have triggered interest in epitaxial growth of 3D semiconductor materials. However, most of the epitaxially-grown nano- and micro-structures available so far are limited to certain forms of crystal arrays, and the level of control is still very low. In this review, we describe our latest progress in 3D epitaxy of oxide and nitride semiconductor crystals. This paper covers issues ranging from (i) low-temperature solution-phase synthesis of a well-regulated array of ZnO single crystals to (ii) systematic control of the axial and lateral growth rate correlated to the diameter and interspacing of nanocrystals, as well as the concentration of additional ion additives. In addition, the critical aspects in the heteroepitaxial growth of GaN and InGaN multilayers on these ZnO nanocrystal templates are discussed to address its application to a 3D light emitting diode array.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.841-845
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• 2013

We give a textured front on silicon wafer for high-efficiency solar cells by using micro contact printing method which uses PDMS (polydimethylsiloxane) silicon rubber as a stamp and SAM (self assembled monolayer)s as an ink. A random pyramidal texturing have been widely used for a front-surface texturing in low cost manufacturing line although the cell with random pyramids on front surface shows relatively low efficiency than the cell with inverted pyramids patterned by normal optical lithography. In the past two decades, the micro contact printing has been intensively studied in nano technology field for high resolution patterns on silicon wafer. However, this promising printing technique has surprisingly never applied so far to silicon based solar cell industry despite their simplicity of process and attractive aspects in terms of cost competitiveness. We employ a MHA (16-mercaptohexadecanoic acid) as an ink for Au deposited $SiO_2/Si$ substrate. The $SiO_2$ pattern which is same as the pattern printed by SAM ink on Au surface and later acts as a hard resist for anisotropic silicon etching was made by HF solution, and then inverted pyramidal pattern is formed after anisotropic wet etching. We compare three textured surface with different morphology (random texture, random pyramids and inverted pyramids) and then different geometry of inverted pyramid arrays in terms of reflectivity.

• Applied Microscopy
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• v.50
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.