• 한국전기전자재료학회논문지
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• 제20권8호
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• 한국진공학회지
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• 제16권3호
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• pp.181-186
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• 2007

본 연구에서는 플라즈마 디스플레이 패널의 방전 특성과 MgO 보호막 물성에 영향을 미치는 MgO 증착률에 대해 분석을 하였다. 물성 특성으로 결정 방향과 표면 거칠기 결정 구조 및 음극선 발광을 XRD (X-ray Diffraction), AFM (Atomic Force Microscopy), Mono-CL (Mono Cathode Luminescence analysis)등을 이용하여 측정하였고, 방전 특성으로는 방전개시전압과 방전 전류, 휘도를 진공 챔버와 오실로스코프 (TDS 540C), 전류 프로브 (TCP 312A), 휘도 색차계 (CS-100A)를 이용하여 측정하였다. 실험 결과 $5{\AA}/sec$의 증착률이 최적의 증착률임을 확인하였고, 또한 MgO의 증착률에 따라서 MgO 보호막의 물성특성이 변화하고 이에 의해서 전기적 광학적 특징이 영향을 받는 것을 확인하였다. 즉, 증착률 $5{\AA}/sec$을 기준으로 증착률이 증가할수록 (200) 결정 방향 및 음극선 발광의 밀도가 감소되고, 동작 전압은 증가하며 점차 효율이 나빠지는 경향을 보인다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.890-893
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• 2006

Effects of the evaporation rate of MgO films using electron beam were investigated on the MgO properties and the discharge characteristics of the plasma display panel (PDP). The evaporation rate was changed from 3 ${\AA}/sec$ to 15 ${\AA}/sec$ at a substrate temperature of $300\;^{\circ}C$. MgO properties such as crystal orientation, surface roughness, contact angle, and film structure were inspected using XPS, AFM, drop shape analysis and SEM. We also studied the relation between MgO properties and PDP discharging characteristics. The minimum firing voltage and maximum efficacy were obtained at evaporation rate of 5 ${\AA}/sec$. In the MgO film deposited at 5 ${\AA}/sec$, (200) orientation was most intensive and surface roughness was minimum.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.12-17
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• 2007

본 연구에서는 전자빔 증착의 증착률이 MgO 보호막의 특성과 제작된 PDP의 방전 특성에 주는 영향에 대하여 연구, 분석 하였다. MgO 박막을 여러 조건의 증착률로 증착하였고, 이 후 결정 구조, 표면 거칠기, 박막 구조와 같은 특성을 XRD, AFM 등을 사용하여 측정, 평가하였다. 실험 결과와 Paschen law을 통해서 $5\AA/sec$의 증착률에서 이차전자방출이 최대가 되는 것을 확인할 수 있었으며, 동일 조건에서 방전 전압이 가장 작고, 발광 효율은 가장 큰 값을 갖는 것이 확인되었다. 또한 $5\AA/sec$의 (200) 결정 방향과 $F^+$ center 측정값도 가장 높게 측정되었다. XRD와 CL 스펙트럼의 결과를 통하여 이차전자방출계수가 MgO 박막의 분자 결정상의 $F/F^+$ centers구조와 관련 있음을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.569-570
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• 2006

Effects of the evaporation rate of MgO films using electron beam were investigated on the MgO properties and the discharge characteristics of the plasma display panel (PDP). The evaporation rate was changed from $3{\AA}$/sec to $15{\AA}$/sec at a substrate temperature of $300^{\circ}C$. MgO properties such as crystal orientation, surface roughness, contact angle, and film structure were inspected using XPS, AFM, drop shape analysis and SEM. We also studied the relation between MgO properties and PDP discharging characteristics. The minimum firing voltage and maximum efficacy were obtained at evaporation rate of $5{\AA}$/sec. In the MgO film deposited at $5{\AA}$/sec, (200) orientation was most intensive and surface roughness was minimum.

• 한국세라믹학회지
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• 제30권3호
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• pp.175-180
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• 1993

Influence of Nd3+ substitution for Pb2+ on the dielectric properties and the PbO evaporation according to substituting Nd3+ for Pb2+ in Pb(Mg1/3Nb2/3)O3 system ceramics have been investigated. The dielectric constant at the curie temperature and evaporation of PbO were decreased with increase of Nd3+ amounts. The percentage of PbO evaporation was 2.5wt% in the PMN system substituted Nd3+ for Pb2+, while it was 3.7wt% in the PMN system.

• 한국세라믹학회지
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• 제33권1호
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• pp.17-24
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• 1996

Pb(Mg1/3Nb2/3)O3 powder with high purity chemical homogeniety and reactivity was prepared by solvent eva-poration of common solution. The common solution was fabricated using a Pb(NO3)2 Mg(NO)3 and NB solution which was prepared by dissolving NbC in H2O2 acquous solution. In precusor powder prepared by solvent evaporation method the synthetic temperature of Pb(Mg1/3 Nb2/3)O3 phase was lowered. And the formation of homogeneous Pb(Mg1/3Nb2/3)O3 phase was enhanced but the formation of pyrochlore phase was reduced. The dielectric constant of PMN ceramics from the synthesized powder was found to increase with both sintering temperature and excess MgO and subsequent analysis of the microstructures confirmed that this was due to an increase in grain size. The grain size dependence is explained as a consequence of low-permittivity grain boundaries.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.