• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.8
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• pp.716-719
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel (PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure were inspected using XRD (X-ray diffraction), AFM (atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient $({\gamma})$ was obtained at the evaporation rate of $5{\AA}/sec$. The XRD results and cathode-luminescence (CL) spectra show the ${\gamma}$ values are correlated with F/F+ centers of the molecular structure of MgO films. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5{\AA}/sec$. In the MgO film deposited at $5{\AA}/sec$, the (200) orientation and F+ center were most intensive.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.181-186
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• 2007

We have investigated and analyzed the effects of the evaporation rate of MgO films on the MgO properties and the discharge characteristics of a plasma display panel(PDP). The MgO properties such as the crystal orientation, the surface roughness, the film structure, and cathode-luminescence (CL) spectra were inspected using XRD (X-ray diffraction), AFM(atomic force microscopy). And the discharging characteristics of the PDP such as the firing voltage, discharging current, and luminescence were measured using a vacuum chamber with oscilloscope (TDS 540C), current probe (TCP-312A), color meter (CS-100A) and etc. From the experiments results we confirmed the optimum evaporation rate at $5{\AA}/sec$, the MgO properties were shown to be strongly dependent on the evaporation rate, and the MgO properties had an effecton the optical and electrical characteristics. In other words, if the evaporation rates increase than $5{\AA}/sec$, the intensity of (200) orientation and cathode-luminescence (CL) spectra reduce, and the firing vlotage was increased. So the luminuous efficiency grows worse.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.890-893
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• 2006

Effects of the evaporation rate of MgO films using electron beam were investigated on the MgO properties and the discharge characteristics of the plasma display panel (PDP). The evaporation rate was changed from 3 ${\AA}/sec$ to 15 ${\AA}/sec$ at a substrate temperature of $300\;^{\circ}C$. MgO properties such as crystal orientation, surface roughness, contact angle, and film structure were inspected using XPS, AFM, drop shape analysis and SEM. We also studied the relation between MgO properties and PDP discharging characteristics. The minimum firing voltage and maximum efficacy were obtained at evaporation rate of 5 ${\AA}/sec$. In the MgO film deposited at 5 ${\AA}/sec$, (200) orientation was most intensive and surface roughness was minimum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.184-185
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• 2006

Two-step growth to incorporate the Mg atoms in the ZnO nanorods fabricate by thermal evaporation process and also utilized the ZnO film as a template. In the first step of low temperature, Zn seed metals with low melting temperature formed the droplet, and then MgZnO ternary nanorods were grown by injecting oxygen and evaporating Mg atoms in high temperature process of the second step. The vertical growth of the MgZnO nanorods with large-area distribution and uniformity was successfully performed on the ZnO template. We investigated the shape of the vertically grown 1-D MgZnO nanorods and characterized the optical and crystal properties. We confirmed the incorporation of Mg atoms by the EDS and PL spectrum.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.12-17
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• 2007

The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel(PDP) were investigated and analyzed. Mgo films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure, were inspected using XRD(X-ray diffractometry), AFM(atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary, electron emission coefficient $(\gamma)$ was obtained at the evaporation rate of $5\AA/sec$. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of $5\AA/sec$. In the MgO film deposited at $5\AA/sec$, the (200) orientation and $F^+$ center were most intensive. The XRD results and cathode-luminescence(CL) spectra show the $\gamma$ values are correlated with $F/F^+$ centers of the molecular structure of MgO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.5
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• pp.468-473
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• 2008

A MgO layer is used as electrode protective film in the alternating current plasma display panel (AC PDP). The properties of MgO layer are thought to be one of the most important factors that affects the panel reliability through the firing voltage variation. In this study, we investigated the relations between the surface characteristics and e-beam evaporation process parameters such as deposition rate, temperature of substrate and distance between the MgO pellet and substrate. To produce the MgO layer of (200) crystal orientation, we suggest the high temperature of the substrate, the long distance between the pellet and substrate and the high deposition rate.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.569-570
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• 2006

Effects of the evaporation rate of MgO films using electron beam were investigated on the MgO properties and the discharge characteristics of the plasma display panel (PDP). The evaporation rate was changed from $3{\AA}$/sec to $15{\AA}$/sec at a substrate temperature of $300^{\circ}C$. MgO properties such as crystal orientation, surface roughness, contact angle, and film structure were inspected using XPS, AFM, drop shape analysis and SEM. We also studied the relation between MgO properties and PDP discharging characteristics. The minimum firing voltage and maximum efficacy were obtained at evaporation rate of $5{\AA}$/sec. In the MgO film deposited at $5{\AA}$/sec, (200) orientation was most intensive and surface roughness was minimum.

• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.175-180
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• 1993

Influence of Nd3+ substitution for Pb2+ on the dielectric properties and the PbO evaporation according to substituting Nd3+ for Pb2+ in Pb(Mg1/3Nb2/3)O3 system ceramics have been investigated. The dielectric constant at the curie temperature and evaporation of PbO were decreased with increase of Nd3+ amounts. The percentage of PbO evaporation was 2.5wt% in the PMN system substituted Nd3+ for Pb2+, while it was 3.7wt% in the PMN system.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.17-24
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• 1996

Pb(Mg1/3Nb2/3)O3 powder with high purity chemical homogeniety and reactivity was prepared by solvent eva-poration of common solution. The common solution was fabricated using a Pb(NO3)2 Mg(NO)3 and NB solution which was prepared by dissolving NbC in H2O2 acquous solution. In precusor powder prepared by solvent evaporation method the synthetic temperature of Pb(Mg1/3 Nb2/3)O3 phase was lowered. And the formation of homogeneous Pb(Mg1/3Nb2/3)O3 phase was enhanced but the formation of pyrochlore phase was reduced. The dielectric constant of PMN ceramics from the synthesized powder was found to increase with both sintering temperature and excess MgO and subsequent analysis of the microstructures confirmed that this was due to an increase in grain size. The grain size dependence is explained as a consequence of low-permittivity grain boundaries.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.