• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.575-578
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• 2004

The charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor surface was modified in order to improve discharging characteristic of green cell in an ac-plasma display panel (ac-PDP). The Zinc-silicate ($Zn_2SiO_4:Mn^{2+}$) green-emitting phosphor was coated with magnesium oxide(MgO), which is viable to have positive charge on the surface. After fabricating the green cell with MgO-coated $Zn_2SiO_4:Mn^{2+}$, the electrical and optical properties in the cell were examined. It was found that the dynamic voltage margin could be increased while the address time was reduced. It may be ascribed to the change of charging tendency of $Zn_2SiO_4:Mn^{2+}$ phosphor by MgO coating, which makes it possible to stable wall-charge accumulation. When $Zn_2SiO_4:Mn^{2+}$ phosphor was coated with 1.3wt%-MgO, the address time was reduced 1.2 ${\mu}s$ and the address voltage lowered 25 V without any misfiring problem, compared to those of typical $Zn_2SiO_4:Mn^{2+}$ phosphor layer. The luminescence intensity of green cell using MgO-coated phosphor layer was also improved by 10%.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2005.10a
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• pp.158-159
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• 2005

This study showed that the highest temperature point of the Dongrae thermal spring in Pusan was moved to the north direction of the Dongrae fault as times goes by. The Br concentration(1.5mg/L) in Dongrae thermal waters indicated the influence of 2% seawater mixing. If the simple mixing without hydrochemical reaction occurs between seawater and thermal water, the concentration of Mg will be about 20mg/L. But the low concentration(0.1 mg/L) of Mg, contrary to high concentration(10 mg/L) of surrounding groundwater not affected by thermal water, suggested the thermal water, seawater and rock interactions. The calculation of saturation index(SI) by using the geochemical code of EQ3NR showed that the Mg in thermal groundwater, which was introduced by seawater, was removed by the precipitation of Antigorite (SI: log Q/K =71.753, $Mg_{48}Si_{24}O_{85}(OH)_{62}$) and Tremolite (SI: 8.463, $Ca_2Mg_5Si_8O_{22}(OH)_2$), Talc (SI: 6.409, $Mg_3Si_4O_{10}(OH)_2$), Dolomite (SI: 2.014, $CaMg(CO_3)_2$), Chrysotile (SI: 3.698, $Mg_3Si_2O_5(OH)_4$) in the crack of fault zone. The highest temperature point in the study area will move to north direction and stop in the Jangjun area without the input of seawater.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.18-21
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• 1995

In this study, crystallization, water swelling and dielectric properties of Li$_2$O-MgO-MgF$_2$-SiO$_2$System glass ceramics were investigated. Base glass melted at 1450$^{\circ}C$ and crystallized through heat treatment. The optimum heat treatment schedule was 460$^{\circ}C$ for nucleation and 640$^{\circ}C$, 1100$^{\circ}C$ for crystallization. The Principle crystalline phase was lithium fluorhectorite. Lithium fluorhectorite was the crystal phase which it was influenced water swelling. Samples progressed 2 minutes later they have rapid hydration at forced water swelling condition. Also value of dielectric constants have approximately 10 at 100kHz.

• Journal of the Korean Ceramic Society
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• v.17 no.1
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• pp.20-26
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• 1980

The crystallization behaviors of slag-based glass in $CaO-MgO-Al_2O_3-SiO_2(-Na_2O)$ system have been studied. The mother glass containing 16.50 CaO, 7.50MgO, 19.70Al2O3, 50.80SiO3 and 2.09wt% $Na_2O$ was prepared by using Korean domestic raw materials such as granulated slag, serpentine, sea sand and etc. The glass-ceramics composed of major crystalline phase diopside was produced by the heat treatment in a temperature range from 850$^{\circ}$ to 9$25^{\circ}C$ for 0-6hr. The composition and morphology of diopside phase formed in the system were examined by X-ray diffraction analysis and electron microscopy. The kinetic measurements such as J.M. A plot and Arrhenius plot indicated that the process of nucleation of the initially formed diopside phase could be described from the view point of instantaneous nucleation. It was also demonstrated that the linear crystal growth of diopside phase was proceeded by short range diffusion of $Mg^{2+}$ and $Ca^{2+}$ ion. The microstructures of the resulting glass-ceramics were consisted of leafroidal shaped crystalline aggregations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.233-239
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• 1998

SiC thin films were deposited by chemical vapor deposition method using tetramethylsilane (TMS) and hexamethyldisilane (HMDS). The chamber pressure during the deposition was kept at about 1 torr. Precursor was transported to the reaction chamber by $H_2$gas and SiC deposition was carried out at the reaction temperature of $1200^{\circ}C$. Si-wafer masked with tantalum and MgO single crystal covered with platinum and molybdenum were used as substrates. The selectivity of SiC deposition was observed by comparing the microstructure between metal (Ta, Pt, and Mo) surfaces and substrate surfaces (Si and MgO). The deposited films were identified as the $\beta-SiC$ phase by X-ray diffraction pattern. Also, the deposition -behavior of SiC on each surface was investigated by the scanning electron microscope analysis.

• Journal of the Korean Ceramic Society
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• v.34 no.3
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• pp.241-248
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• 1997

RuO2 thin films were deposited on SiO2(1000$\AA$)/Si and MgO(100) single crystal substrates at low tem-peratures by hot-wall metalorganic chemical vapor deposition(MOCVD), and effects of deposition paramet-ers on the properties of the thin films were investigated. RuO2 single phase was obtained at lower de-position temperature of 25$0^{\circ}C$. RuO2 thin films deposited onto SiO2(1000$\AA$)/Si substrates showed a random orientation, and RuO2 films onto MgO(100) single crystals showed the (hk0) orientation. The crystallinity and resistivity of RuO2 thin films increased and decreased with increasing deposition temperature, respec-tively. The resistivity of RuO2 thin films decreased with decreasing the flow rate. The resistivity of the 2600$\AA$-thick RuO2 thin films deposited with O2 flow rate of 50 sccm at 35$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm, and they could be applicable to bottom electrodes of high dielectric materals.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.7-12
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• 1985

A theoretical model describing the behavior of isolated pores during liquid phase sintering was developed and the experimental results obtained by the $80MgO-CaMgSiO_4$ specimens were given. Most of isolated pores once formed in the interior of specimen were not eliminated because the pressure of trapped non-diffusable gas in the pore like $N_2$ increases very rapidly with pore volume contraction. As sint-ering time increase it was observed that the number of pores decreases whereas the average size of pore increases. This phenomenon was interpreted in terms of the MgO growth during sintering which results in the coalescence of isolated pores. The increase of pore size resulting from pore coalescence was attributed to the main cause of the overfiring phenomena ; the higher sintering temperature or a long time sintering leads to a decrease in density.

• Journal of the Korean Ceramic Society
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• v.39 no.12
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• pp.1171-1176
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• 2002

The growth characteristics on the MgO thin films prepared by the e-beam evaporation method have been investigated. We observed the film of preferred orientation and surface morphology with various parameters such as substrate temperature, deposition rate on Si(100) and slide glass respectively. Consequently, it was shown that MgO(111) preferred orientation films can be obtained as the deposition rate was increased on Si(100) substrate. MgO(220) peak was found as the substrate temperature was increased. Whereas, in case of slide glass the orientation is changed from (200) to (111) by substrate temperature. Also we investigated the relationship between the film characteristics and the orientation of MgO thin films.

• Journal of Technologic Dentistry
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• v.21 no.1
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• pp.5-14
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• 1999

Glass ceramics for dental crown prosthesis were prepared by crystallization of CaO-MgO-SiO2-$P_2O_5-TiO_2$ glasses. Their crystallization behaviors have been investigated as a function of heattreatment temperature, holding time and chemical composition in relation to mechinical properties. Crystallization peak temperatures were determined by differential thermal analysis(DTA). Crystalline phases and mircostructures of heat-treated sample were determined by the means of powder X-ray diffraction(XRD) and scanning electron microscopy(SEM). The final crystalline phase assemblages and the microstructures of the samples were found to be dependent on glass compositions, heattreatment temperature, and holding time. 1st crystallization peak temperature(TP), affected strongly by apatite, was found to be increased or decreased. From the experiment, the following results were obtained : 1. The crystallization peak temperature($T_P$) formed by apatite increased until adding up to 9wt% $TiO_2$ to base glass composition, then decreased above that. 2. Apatite($Ca_{10}P_6O_{25}$), whitlockite(${\beta}-3CaO-P_2O_5$), $\beta$-wollastonite($CaSiO_3$), magnesium tianate($MaTiO_3$) and diopside(CaO-MgO-$2SiO_2$) crystal phase were precipitated in MgO-CaO-$SiO_2-TiO_2-P_2O_5$ glass system containing 9wt% and 11wt% of $TiO_2$ 3. Vickers hardness of samples increased with increasing heat-treatment temperature and Vickers hardness of S415T9 samples heat-treated at 1075 was approxi-mately 813Kg $mm^{-2}$ as maximum value. 4. Vickers hardness of samples increased due to precipitation of apatite, whitlockite, $\beta$-wollastonite, magnesium titanate, and diopside crystal phases within glass matrix.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.