• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.242-242
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• 2016

Magnetite, Fe3O4, is a ferrimagnet with a cubic inverse spinel structure and exhibits a metal-insulator, Verwey, transition at about 120 K.[1] It is predicted to possess as half-metallic nature, 100% spin polarization, and high Curie temperature (850 K). Cobalt ferrite is one of the most important members of the ferrite family, which is characterized by its high coercivity, moderate magnetization and very high magnetocrystalline anisotropy. It has been reported that the CoFe2O4/Fe3O4 bilayers represent an unusual exchange-coupled system whose properties are due to the nature of the oxide-oxide super-exchange interactions at the interface [2]. In order to evaluate the effect of interface interactions on magnetic and transport properties of ferrite and cobalt ferrite, the CoFe2O4/Fe3O4 superlattices on MgO (100) substrate have been fabricated by molecular beam epitaxy (MBE) with the wave lengths of 50, and $200{\AA}$, called $25{\AA}/25{\AA}$ and $100{\AA}/100{\AA}$, respectively. Streaky RHEED patterns in sample $25{\AA}/25{\AA}$ indicate a very smooth surface and interface between layers. HR-TEM image show the good crystalline of sample $25{\AA}/25{\AA}$. Interestingly, magnetization curves showed a strong antiferromagnetic order, which was formed at the interfaces.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.181-185
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• 2005

We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor $Zn_{1-x}Cr_xO$ thin films prepared by reactive sputtering. Nondoped $Zn_{0.99}Cr_{0.01}O$ thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.295-299
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• 2014

Electrical conductivities of complex perovskites, layered perovskite and Sr doped layered perovskite oxides were measured and analyzed for cathode materials of Intermediate Temperature-operating Solid Oxide Fuel Cells (IT-SOFCs). The electrical conductivities of $Sm_{1-x}Sr_xCoO_{3-\delta}$ (x = 0.3 and 0.7) exhibit a metal-insulator transition (MIT) behavior as a function of temperature. However, $Sm_{0.5}Sr_{0.5}CoO_{3-\delta}$ (SSC55) shows metallic conductivity characteristics and the maximum electrical conductivity value compared to the values of $Pr_{0.5}Sr_{0.5}CoO_{3-\delta}$ (PSC55) and $Nd_{0.5}Sr_{0.5}CoO_{3-\delta}$ (NSC55). The electrical conductivity of $SmBaCo_2O_{5+\delta}$ (SBCO) exhibits a MIT at about $250^{\circ}C$. The maximum conductivity is 570 S/cm at $200^{\circ}C$ and its value is higher than 170 S/cm over the whole temperature range tested. $SmBa_{0.5}Sr_{0.5}Co_2O_{5+\delta}$ (SBSCO), 0.5 mol% Sr and Ba substituted at the layered perovskite shows a typically metallic conductivity that is very similar to the behavior of the SSC55 cathode, and the maximum and minimum electrical conductivity in the SBSCO are 1280 S/cm at $50^{\circ}C$ and 280 S/cm at $900^{\circ}C$.

• Fire Science and Engineering
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• v.33 no.4
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• pp.70-76
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• 2019

This paper reports development of a low-power standalone heat detector using a Critical-Temperature Switch. The Critical-Temperature Switch, which is a thermally sensitive and passive component whose resistance decreases significantly at 70 ℃ due to a metal-insulator transition, provides reliable temperature measurements. This digital-like behavior of the Critical-Temperature Switch can detect fires without a microcontroller, meaning that it can minimize the power consumption of the standalone heat detector. The experimental results showed that the standalone heat detector using the Critical-Temperature Switch complied with the Notification of the National Emergency Management Agency. Compared to conventional standalone heat detectors, only 70% of the power was consumed monitoring the fires.

• Korean Journal of Optics and Photonics
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• v.31 no.1
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• pp.31-36
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• 2020

We propose a band-switchable terahertz metamaterial based on an etched vanadium dioxide (VO₂) thin film. A line of etched VO₂ thin film was placed in the center gap of the split square-loop shape for the tunability of the metamaterial. The resonance frequency of the metamaterial can be switched from the 1.4 THz band to the 0.7 THz band, according to the insulator-metal phase transition in the VO₂ thin film. The absolute difference in the transmittance of the metamaterial was 78.5% and 65.8% at 0.7 THz and 1.4 THz respectively, according to the band switching. The differential phase shift was around 90°, and the transmittance was stably maintained between 40% and 60% in the middle band of the two switchable resonance-frequency bands.

• Korean Journal of Optics and Photonics
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• v.28 no.2
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• pp.59-67
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• 2017

This paper proposes an asymmetric split-loop resonator with an outer square loop (ASLR-OSL), which can actively control terahertz wave transmission properties while maintaining a high-Q-factor of the asymmetric split-loop resonator (ASLR). An added outer square loop is designed to play the roles of both a metamaterial and a micro-heater, which can control the temperature through a directly applied bias voltage. A vanadium dioxide ($VO_2$) thin film, which exhibits an insulator-metal phase transition with temperature change, is used to control the transmission properties. The proposed ASLR-OSL shows transmission properties similar to those of the ASLR, and they can be successfully controlled by directly applying bias voltage to the outer square loop. Based on these results, an electrically controllable terahertz high-Q metamaterial could be achieved simply by adding a square loop to the outside of a well-known high-Q metamaterial.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.6
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• pp.80-85
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• 2019

Vanadium dioxide is a well-known metal-insulator phase transition material. Lots of researches of vanadium redox flow batteries have been researched as large scale energy storage system. In this study, vanadium oxide($VO_x$) thin films were applied to cathode for lithium ion battery. The $VO_x$ thin films were deposited on Si substrate($SiO_2$ layer of 300 nm thickness was formed on Si wafer via thermal oxidation process), quartz substrate by RF magnetron sputter system for 60 minutes at $500^{\circ}C$ with different RF powers. The surface morphology of as-deposited $VO_x$ thin films was characterized by field-emission scanning electron microscopy. The crystallographic property was confirmed by Raman spectroscopy. The optical properties were characterized by UV-visible spectrophotometer. The coin cell lithium-ion battery of CR2032 was fabricated with cathode material of $VO_x$ thin films on Cu foil. Electrochemical property of the coin cell was investigated by electrochemical analyzer. As the results, as increased of RF power, grain size of as-deposited $VO_x$ thin films was increased. As-deposited thin films exhibit $VO_2$ phase with RF power of 200 W above. The transmittance of as-deposited $VO_x$ films exhibits different values for different crystalline phase. The cyclic performance of $VO_x$ films exhibits higher values for large surface area and mixed crystalline phase.