• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.119-119
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• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Tribology and Lubricants
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• v.39 no.5
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• pp.197-202
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• 2023

Recently, research on experimental and analytical techniques utilizing microfluidic devices has been pursued. For example, lab-on-a-chip devices that integrate micro-devices onto a single chip for processing small sample quantities have gained significant attention. However, during sample preparation, unnecessary gases can be introduced into the internal channels, thus, impeding device flow and compromising specific function efficiency, including that of analysis and separation. Several methods have been proposed to mitigate this issue, however, many involve cumbersome procedures or suffer from complexities owing to intricate structures. Recently, some approaches have been introduced that utilize hydrophobic device structures to remove gases within channels. In such cases, the permeability of gases passing through the structure becomes a crucial performance factor. In this study, a method involving the deposition and sintering of diluted Ag-ink onto a silicon wafer surface is presented. This is followed by unstructured nano-pattern creation using a Metal Assisted Chemical Etching (MACE) process, which yields a nanostructured surface with unstructured pillar shapes. Subsequently, gas permeability in the spaces formed by these surface structures is investigated. This is achieved by experiments conducted to incorporate a pressure chamber and measure gas permeability. Trends are subsequently analyzed by comparing the results with existing theories. Finally, it can be confirmed that the significance of this study primarily lies in its capability to effectively evaluate gas permeability through unstructured pillar-like nanostructures, thus, providing quantitative values for the appropriate driving pressure and expected gas removal time in practical device operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.417-420
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• 2007

Micro parts are usually used of producing by micro-electro-mechanical systems(MEMS). In this paper, we present some fundamental results concerning on the MEMS, extrusion condition on the micro forming characteristics and new micro forward extrusion machine has been developed. In the first step, we manufactured micro dies in two kinds of sections. One is a circle section, another is a cross section. The process for fabricating micro dies combines a deep UV-lithography, anisotropic etching techniques and metal electroplating with bulk silicon based on Ni with a thickness of $50{\mu}m$. The outer diameter of Ni-micro dies is 3mm and the diameter of extrusion section is $270{\mu}m$ for a cross section, $500{\mu}m$ for a circle section. The low linear density polyethylene(LLEPD) in the shape of a pellet has been used of micro extrusion. The billet was placed in a container manufactured by electric discharge machining and extruded through the micro die by a piezoelectric actuator. The micro extrusion has succeeded in a forming such micro parts as micro bars, micro cross shafts.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1839-1842
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• 1999

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2H_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from Previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2H_2$ gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.65-65
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• 2009

High temperature silicon carbide Schottky diode was fabricated with Au deposited on poly 3C-SiC thin film grown on p-type Si(100) using atmospheric pressure chemical vapor deposition. The charge transport mechanism of the diode was studied in the temperature range of 300 K to 550 K. The forward and reverse bias currents of the diode increase strongly with temperature and diode shows a non-ideal behavior due to the series resistance and the interface states associated with 3C-SiC. The charge transport mechanism is a temperature activated process, in which, the electrons passes over of the low barriers and in turn, diode has a large ideality factor. The charge transport mechanism of the diode was analyzed by a Gaussian distribution of the Schottky barrier heights due to the Schottky barrier inhomogeneities at the metal-semiconductor interface and the mean barrier height and zero-bias standard deviation values for the diode was found to be 1.82 eV and $s_0$=0.233 V, respectively. The interface state density of the diode was determined using conductance-frequency and it was of order of $9.18{\times}10^{10}eV^{-1}cm^{-2}$.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.549-552
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• 2004

The thesis describes the design of 12bit digital-to-analog converter (DAC) which shows the conversion rate of 500MHz and the power supply of 3.3V with 0.35${\mu}m$ CMOS 1-poly 4-metal process for advanced wireless transceiver of high speed and high resolution. The proposed DAC employes segmented structure which consists of 6bit MSB, 3bit mSB, 3bit LSB for area efficiency Also, using a optimized aspect ratio of process and new triple diagonal symmetric centroid sequence for high yield and high linearity. The proposed 12bit current mode DAC was employs new deglitch circuit for the decrement of the glitch energy. Simulation results show the conversion rate of 500MHz, and the power dissipation of 85mW at single 3.3V supply voltage. Both DNL and INL are found to be smaller than ${\pm}0.65LSB/{\pm}0.8LSB$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.125.2-125.2
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• 2016

Semiconductor nanowires are essential building blocks for various nanotechnologies including energy conversion, optoelectronics, and thermoelectric devices. Bottom-up synthetic approach utilizing metal catalyst and vapor phase precursor molecules (i.e., vapor - liquid - solid (VLS) method) is widely employed to grow semiconductor nanowires. Al has received attention as growth catalyst since it is free from contamination issue of Si nanowire leading to the deterioration of electrical properties. Al-catalyzed Si nanowire growth, however, unlike Au-Si system, has relatively narrow window for stable growth, showing highly tapered sidewall structure at high temperature condition. Although surface chemistry is generally known for its role on the crystal growth, it is still unclear how surface adsorbates such as hydrogen atoms and the nanowire sidewall morphology interrelate in VLS growth. Here, we use real-time in situ infrared spectroscopy to confirm the presence of surface hydrogen atoms chemisorbed on Si nanowire sidewalls grown from Al catalyst and demonstrate they are necessary to prevent unwanted tapering of nanowire. We analyze the surface coverage of hydrogen atoms quantitatively via comparison of Si-H vibration modes measured during growth with those obtained from postgrowth measurement. Our findings suggest that the surface adsorbed hydrogen plays a critical role in preventing nanowire sidewall tapering and provide new insights for the role of surface chemistry in VLS growth.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.315-315
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• 2016

The hydrogenated amorphous silicon (a-Si:H) thin film solar cells using n/Al or n/Ag/Al back reflector have low short circuit current (Jsc) due to high absorption coefficients of Al or work function difference between n-layer and the metal. In this article, we utilized aluminum doped zinc oxide (AZO) to raise the internal reflectance for the improvement of short current density (Jsc) in a-Si:H thin film solar cells. It was found that there was a slight increase in the reflectance in the long wavelength range at the process temperature of 125oC due to improved crystalline quality of the AZO back reflector. The optical band gap (Eg) and work function were affected by the temperature and so did the internal reflectance. The increased internal reflectance within the solar cell resulted in Jsc of 14.94 mA/cm2 and the efficiency of 8.84%. Jsc for the cell without back reflector was 12.29 mA/cm2.