Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Growth of highly purified carbon nanotubes by thermal chemical vapor deposition

열화학기상증착법에 의한 고순도 탄소나노튜브의 성장

  • Lee, Tae-Jae (School of Electrical Engineering, Kunsan National University) ;
  • Lee, Cheol-Jin (School of Electrical Engineering, Kunsan National University) ;
  • Kim, Dae-Won (School of Electrical Engineering, Kunsan National University) ;
  • Park, Jung-Hoon (School of Electrical Engineering, Kunsan National University) ;
  • Son, Kwon-Hee (School of Electrical Engineering, Kunsan National University) ;
  • Lyu, Seung-Chul (School of Electrical Engineering, Kunsan National University) ;
  • Song, Hong-Ki (School of Electrical Engineering, Kunsan National University) ;
  • Kim, Seong-Jeen (Dept. of Electronic Engineering, Kyungnam University)
  • 이태재 (군산대학교 전기전자제어공학부) ;
  • 이철진 (군산대학교 전기전자제어공학부) ;
  • 김대운 (군산대학교 전기전자제어공학부) ;
  • 박정훈 (군산대학교 전기전자제어공학부) ;
  • 손권희 (군산대학교 전기전자제어공학부) ;
  • 류승철 (군산대학교 전기전자제어공학부) ;
  • 송홍기 (군산대학교 전기전자제어공학부) ;
  • 김성진 (경남대학교 전자공학과)
  • Published : 1999.07.19
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Abstract

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2H_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from Previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or $NH_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2H_2$ gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.

Keywords