• Journal of Korea Foundry Society
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• 제24권4호
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• pp.217-224
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• 2004

The effect of casting variable on the fluidity of high silicon, especially hypereutectic, heat-resistant ductile cast iron melt was investigated. When pouring temperature and silicon content were constant, that was increased with carbon content. When the pouring temperature and carbon content were constant, that also increased with the silicon content. Even though these results were thought to be caused by the high heat of fusion evolved during the crystallization of proeutectic graphite nodules, further research seemed to be needed. The fluidity for taller sprue was higher than that for smaller one.

• Journal of Sensor Science and Technology
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• 제15권6호
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• pp.457-461
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• 2006

To use the porous silicon as gas sensors, we made the MOPS structure from the porous silicon with Al evaporation and investigated the sensing characteristic of ethanol. When the MOPS structure is in contact with ethanol gas, the maximum peak of PL changes and it return to original intensity without contact. The MOPS structure had response time 0.78s and recovery time 4.13s when it is in contact with ethanol, which satisfied the required sensor standards. Further complimentary researches, however, are required to investigate the contact mechanism between MOPS structure and ethanol and to solve the surface contamination problem.

• Journal of Korea Foundry Society
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• 제26권4호
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• pp.174-179
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• 2006

This study aims to investigate the microstructures and mechanical properties of DCI manufactured by sand and metal mold casting. To prohibit the formation of the chill, carbon, silicon and rare earth($0{\sim}0.2\;wt%$) were controlled and temperature of metal mold was constantly kept at $160^{\circ}C$. The sizes, counts and nodularity ratios of nodules were analyzed by image analysis device. Wear test using pin-on-disc wear tester was carried out under the conditions of load 47.2N, velocity 0.4 m/s and distance 2000 m. Tensile test using Instron type testing machine was performed with velocity of 0.1 mm/min according to the KS B 0802. The formation of the chill was not observed when percentage of the carbon and silicon were 3.8 and 2.5. Mechanical properties of GCD manufactured by metal mold were better than sand casting.

• Bulletin of the Korean Chemical Society
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• 제15권6호
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• pp.460-465
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• 1994

New silicon-monosubstituted (${\eta}^4$-2,3,4,5-tetraphenyl-l-silacyclopentadiene)transi tion metal complexes are described. (7-Alkyl-7-silanorbornadienyl)MLn(Alkyl=Methyl: MLn=CpRu$(CO)_2$: Alkyl=Methyl: MLn=CpNi(CO): Alkyl=Ethyl: MLn=CpNi(CO)) complexes were prepared from the corresponding silole-transition metal complexes with dimethylacetylenedicarboxylate. Cycloaddition products were obtained with 2,3-dimethyl-1,3-butadiene, 2,3-butanedione, and 1,4-benzoquinone through the ruthenium-substituted silylene. We have determined the crystal structure of (1-methyl-2,3,4,5-tetraphenyl-l-silacyclopentadien yl)cyclopentadienyldicarbonylruthenium by using graphite monochromated Mo-Ka radiation. The compound was crystallized in the monoclinic space group $P2_{1/c}$ with a = 9.838(l), b = 15.972(3), c = 18.327(3) ${\AA}$, and ${\beta}= 94.28(l)^{circ}$. The ruthenium moiety CpRu$(CO)_2$ on silicon is in an axial position.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제16권2호
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• pp.76-81
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• 2006

The leaching behavior of heavy metal ions with pH and colloid/interface property was analyzed by ICP and SEM. The heavy metals in EAF dust are 'amphoteric metal' and the heavy metal ions leached a little at pH 10. And the leaching concentrations of heavy metals at pH 12 were higher than the that at pH 8. The leaching concentrations of heavy metal ion were decreased with adding the clay to the EAF dust. Especially, the leaching concentrations of heavy metal ion were effectively decreased at pH 12. The observation of colloid/interface properties shows that the soluble silicon hydroxide from clay at pH 12 was precipitated at the surface of the heavy metal and clay particles. This silicon hydroxide precipitates were named the PSHP. The leaching concentrations of heavy metal ion were effectively decreased by the formation of PSHP when adding the clay to the EAF dust and controlling the pH of the slurry at 12.

• Journal of the Korean Ceramic Society
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• 제20권4호
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• pp.305-314
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• 1983

In order to enhance the rate of th nitridation and to give the high density of reaction-bonded silicon nitride MgO powder as nitriding aid were added to silicon powders and the mixture was pressed isostatically into compacts which were nitrided in the furnace of 1, 35$0^{\circ}C$ where 95% $N_2$-5% $H_2$ gases were flowing. As the other nitriding aid $Mg(NO_3)_2 6H_2O$ was selected, A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$. Magnesium oxide-coated silicon powders were formed into compacts prior to the nitridation on the same condition as the former. Magnesium nitrate (MgO, produced from the decomposition of magnesium nitrate) was more effective for the formation of the $\beta$-phase in the initial stage of the nitridation probably due to the easy formation of $MgO-SiO_2$-metal oxide eutectic melt. It has been confirmed that forsterite was formed as a result of the reaction between MgO and $SiO_2$ film of silicon surface. It was considered that MgO produced from magnesium nitrate may be finer more reactive and more uniformly distributed on the surface of silicon particles than original MgO. The higher the forming pressure was the more the $\beta$-phase was formed.

• Journal of Microbiology and Biotechnology
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• 제30권1호
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• pp.118-126
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• 2020

Silicon and phosphorus are elements that are beneficial for plant growth. Despite the abundant availability of silicate and phosphate in the Earth's crust, crop nutritional requirements for silicon and phosphorus are normally met through the application of fertilizer. However, fertilizers are one of the major causes of heavy metal pollution. In our study, we aimed to assess silicate and phosphate solubilization by the bacteria Enterobacter ludwigii GAK2, in the presence and absence of phosphate [Ca₃(PO₄)₂] or silicate (Mg₂O₈Si₃), to counteract cadmium stress in rice (Oryza sativa L). Our results showed that the GAK2-treated rice plants, grown in soil amended with phosphate [Ca₃(PO₄)₂] or silicate (Mg₂O₈Si₃), had significantly reduced cadmium content, and enhanced plant growth promoting characteristics including fresh shoot and root weight, plant height, and chlorophyll content. These plants showed significant downregulation of the cadmium transporter gene, OsHMA2, and upregulation of the silicon carrier gene, OsLsi1. Moreover, jasmonic acid levels were significantly reduced in the GAK2-inoculated plants, and this was further supported by the downregulation of the jasmonic acid related gene, OsJAZ1. These results indicate that Enterobacter ludwigii GAK2 can be used as a silicon and phosphorus bio-fertilizer, which solubilizes insoluble silicate and phosphate, and mitigates heavy metal toxicity in crops.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제28권11호
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• pp.683-689
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• 2015

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.