• Title/Summary/Keyword: Metal sensor

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Design of a Smart Gas Sensor System for Room Air-Cleaner of Automobile (Thick-Film Metal Oxide Semiconductor Gas Sensor)

  • Kim, Jung-Yoon;Shin, Tae-Zi;Yang, Myung-Kook
    • Journal of Electrical Engineering and Technology
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    • v.2 no.3
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    • pp.408-412
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    • 2007
  • It is almost impossible to secure the reproductibility and stability of a commercial Thick-Film Metal Oxide Semiconductor Gas Sensor since it is very difficult to keep the consistency of the manufacturing environment. Thus it is widely known that the general Semiconductor-Oxide Gas Sensors are not appropriate for precise measurement systems. In this paper, the output characteristic analyzer of the various Thick-Film Metal Oxide Semiconductor Gas Sensors that are used to recognize the air quality within an automobile are proposed and examined. The analyzed output characters in a normal air chamber are grouped by sensor ranks and used to fill out the characteristic table of the Thick-Film Metal Oxide Semiconductor Gas Sensors. The characteristic table is used to determine the rank of the sensor that is equipped in the current air cleaner system of an automobile. The proposed air control system can also adapt the on-demand operation that recognizes the history of the passenger's manual-control.

Sensitivity Improvement of Fiber Bragg Grating Temperature Sensor (광섬유격자 온도센서의 민감도 개선)

  • Kang, Han-Chul;Song, Min-Ho
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.26 no.3
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    • pp.40-45
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    • 2012
  • We substantially increased the temperature sensitivity of a fiber Bragg grating temperature sensor by gluing it onto a piece of bi-metal strip. The temperature-induced Bragg wavelength shift is increased upto 5 times more than that of the intrinsic FBG sensor by the strain effect from the deflected bi-metal. We showed the feasibility of the proposed sensor by comparing the temperature measuring experiments with those of the intrinsic FBG sensors. Also we measured temperature varying the length of the bi-metal pieces and analyzed the result effect of it.

Development of Compensation-Type Fire Detector Using Metal-Insulator-Transition Critical-Temperature Sensor (금속-절연체 전이 임계온도센서를 이용한 보상식 화재 감지기 개발)

  • Jung, Sun-Kyu;Kim, Hyun-Tak
    • Fire Science and Engineering
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    • v.28 no.1
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    • pp.26-30
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    • 2014
  • A Compensation-type fire detector (CFD) is operated with two functions of a differential-temperature detector and as a fixed-temperature detector. The differential-temperature detector observes a rate of temperature increase, and the fixed-temperature detector measures a given fixed temperature. The differential-temperature detector does not observe the outbreak of fire in slowly increasing temperature conditions, whereas the fixed-temperature detector is not able to observe the outbreak of fire in conditions under predetermined temperature level. We developed a CFD to compensate for weaknesses of both detectors. To compensate for the disadvantages, a sensor of the sensor metal-insulator-transition critical-temperature sensor was used. Temperature coefficient of resistance is the sensitivity for sensor. At $55^{\circ}C$, temperature coefficient of resistance of metal-insulator-transition critical-temperature sensor was 14.15%. Temperature coefficient of resistance of thermistor was about 0.5%. This CFD was operated as two ways that fixed-temperature detector and differential-temperature detector in one sensor.

A Simple Capacitive Sensor Array Based on a Metal-Insulator-Metal Structure

  • Lee, Hee-Ho;Choi, Jin-Hyeon;Ahn, Jung-Il;Kim, Chang-Soo;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.21 no.2
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    • pp.83-89
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    • 2012
  • A simple array of metal-insulator-metal capacitive elements was proposed for a potential application in humidity sensing platforms. We fabricated meso-scale sensors with different sizes(large-size: $2.7{\times}2.7mm^2$ ; mid-size: $1.5{\times}1.5mm^2$ ; small-size: $0.7{\times}0.7mm^2$) and characterized the performance of each design. Polyimide films were utilized as a humidity-sensitive layer. Capacitance changes of the polyimide layer were measured with respect to water absorption. The device showed sensitivity in the full range of relative humidity (RH) with excellent linearity(correlation coefficient > 0.994). This array structure exhibits unique advantages including easy fabrication process, high batch productivity, and high structural compatibility with various substrate materials. It is anticipated that this device structure will be potentially useful in unique applications including mapping spatial humidity variations over a meso-scale area and implementing flexible humidity sensing element arrays.

Wearable Force Sensor Using 3D-printed Mold and Liquid Metal (삼차원 프린트된 몰드와 액체 금속을 이용한 웨어러블 힘 센서 개발)

  • Kim, Kyuyoung;Choi, Jungrak;Jeong, Yongrok;Kim, Minseong;Kim, Seunghwan;Park, Inkyu
    • Journal of Sensor Science and Technology
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    • v.28 no.3
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    • pp.198-204
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    • 2019
  • In this study, we propose a wearable force sensor using 3D printed mold and liquid metal. Liquid metal, such as Galinstan, is one of the promising functional materials in stretchable electronics known for its intrinsic mechanical and electronic properties. The proposed soft force sensor measures the external force by the resistance change caused by the cross-sectional area change. Fused deposition modeling-based 3D printing is a simple and cost-effective fabrication of resilient elastomers using liquid metal. Using a 3D printed microchannel mold, 3D multichannel Galinstan microchannels were fabricated with a serpentine structure for signal stability because it is important to maintain the sensitivity of the sensor even in various mechanical deformations. We performed various electro-mechanical tests for performance characterization and verified the signal stability while stretching and bending. The proposed sensor exhibited good signal stability under 100% longitudinal strain, and the resistance change ranged within 5% of the initial value. We attached the proposed sensor on the finger joint and evaluated the signal change during various finger movements and the application of external forces.

Effects of reflective index of fiber sensor coil end on current measurement (광CT 센서코일 끝단의 반사율이 전류측정에 미치는 영향)

  • Park, Hyoung-Jun;Kim, Hyun-Jin;Song, Min-Ho
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2008.05a
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    • pp.74-77
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    • 2008
  • We improved an efficiency of fiber-optic current transformer by using a metal-coated sensor coil. To reduce the linear birefringence, we used a length of spun fiber as sensor coil, and then used a flint glass fiber coil for comparison. To make the sensor coil in the reflection type, we used different reflection mirrors at the end of the sensor coil, such as a Faraday rotator mirror, a simple mirror, a metal-coated fiber end and a simple fiber end. From the experimental results, the linear error of current measurements were less than ${\sim}$ 0.2 % regardless of the mirror types. The metal-coated sensor was the most cost-effective considering the fabrication cost and the simple structure.

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A Study on the Detection Behavior of Chlorine Dioxide on Metal Oxide Sensors (금속산화물센서의 이산화염소 가스에 대한 감지거동에 관한 연구)

  • Yu, Joon-Boo;Byun, Hyung-Gi
    • Journal of Sensor Science and Technology
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    • v.29 no.3
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    • pp.211-214
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    • 2020
  • Chlorine dioxide is very effective gas for sterilization or disinfection (in manufacturing), and does not produce harmful by-products after use. However, if its concentration exceeds 10 %, it become explosive and cannot be compressed or stored. Therefore, it is necessary to measure its concentration. In this study, the concentration of chlorine dioxide with a high oxidizing strength was measured using a metal oxide sensor. The sensor was a commercially available TGS series from Figaro. The sensitivity of the sensor was inversely proportional to a low concentration of chlorine dioxide gas below 6 ppm and returned to the initial resistance at about 6 ppm. When the gas concentration reached multiples of 10 ppm, resistance of the sensor increased to several megaohms.

CMOS binary image sensor with high-sensitivity metal-oxide semiconductor field-effect transistor-type photodetector for high-speed imaging

  • Jang, Juneyoung;Heo, Wonbin;Kong, Jaesung;Kim, Young-Mo;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.30 no.5
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    • pp.295-299
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    • 2021
  • In this study, we present a complementary metal-oxide-semiconductor (CMOS) binary image sensor. It can shoot an object rotating at a high-speed by using a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector. The GBT PMOSFET-type photodetector amplifies the photocurrent generated by light. Therefore, it is more sensitive than a standard N+/P-substrate photodetector. A binary operation is installed in a GBT PMOSFET-type photodetector with high-sensitivity characteristics, and the high-speed operation is verified by the output image. The binary operations circuit comprise a comparator and memory of 1- bit. Thus, the binary CMOS image sensor does not require an additional analog-to-digital converter. The binary CMOS image sensor is manufactured using a standard CMOS process, and its high- speed operation is verified experimentally.

Wide Dynamic Range CMOS Image Sensor with Adjustable Sensitivity Using Cascode MOSFET and Inverter

  • Seong, Donghyun;Choi, Byoung-Soo;Kim, Sang-Hwan;Lee, Jimin;Shin, Jang-Kyoo
    • Journal of Sensor Science and Technology
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    • v.27 no.3
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    • pp.160-164
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    • 2018
  • In this paper, a wide dynamic range complementary metal-oxide-semiconductor (CMOS) image sensor with the adjustable sensitivity by using cascode metal-oxide-semiconductor field-effect transistor (MOSFET) and inverter is proposed. The characteristics of the CMOS image sensor were analyzed through experimental results. The proposed active pixel sensor consists of eight transistors operated under various light intensity conditions. The cascode MOSFET is operated as the constant current source. The current generated from the cascode MOSFET varies with the light intensity. The proposed CMOS image sensor has wide dynamic range under the high illumination owing to logarithmic response to the light intensity. In the proposed active pixel sensor, a CMOS inverter is added. The role of the CMOS inverter is to determine either the conventional mode or the wide dynamic range mode. The cascode MOSFET let the current flow the current if the CMOS inverter is turned on. The number of pixels is $140(H){\times}180(V)$ and the CMOS image sensor architecture is composed of a pixel array, multiplexer (MUX), shift registers, and biasing circuits. The sensor was fabricated using $0.35{\mu}m$ 2-poly 4-metal CMOS standard process.

Enhancing Gas Response Characteristics of Mixed Metal Oxide Gas Sensors

  • Balamurugan, Chandran;Song, Sun-Ju;Kim, Ho-Sung
    • Journal of the Korean Ceramic Society
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    • v.55 no.1
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    • pp.1-20
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    • 2018
  • Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.