• Progress in Superconductivity
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• v.7 no.1
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• pp.92-96
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• 2005

YBCO thin films on metal substrates were prepared by the metal-organic deposition using trifluoroacetates (TFA-MOD). To compensate the loss of Ba element from the precursor films due to the reaction with $CeO_2$ cap layer, we have employed Ba-excessive precursor solutions of $YBa_{2+x}Cu_{3}O_{7-{\delta}}$ ($0{\le}x{\le}0.1$). The precursor solutions were dip-coated on the metal substrates with $CeO_2$ cap layer, initially heated up to $400^{\circ}C$, and finally fired at the various high temperatures for 2 h in a reduced oxygen atmosphere. With this approach, YBCO films possessing critical temperature over 85 K could be successfully prepared on the metal substrates. The highest $T_{c,zero}$ value of 86 K was obtained from the Ba-excessive YBCO film of x=0.005 in $YBa_{2+x}Cu_{3}O_{7-{\delta}}$ fired at $750^{\circ}C$ for 2 h. However, unexpected $T_c$ suppression even in Ba-excessive YBCO samples requires further identification.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.422-425
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• 1999

Ultrafine NiO/YSZ (Yttria-Stabilized Zirconic) composite powders were prepared by using a glycine nitrate process (GNP) for anode material of solid oxide fuel cells. The specific surface areas of synthesized NiO/YSZ composite powders were examined with controlling pH of a precursor solution and the content of glycine. The binding of glycine with metal ions occurring in the precursor solution was analyzed by using FTIR. The characteristics of synthesized composite powders were examined with X-ray diffractometer, a BET method with $N_2$ absorption, scanning and transmission electron microscopies. Strongly acid precursor solution increased the specific surface area of the synthesized composite powders. This is suggested to be caused by the increased binding of metal ions and glycine under a strong acid solution of pH=0.5 that lets glycine consist of mainly the amine group of NH$_3$$^{+}$ After sintering and reducing treatment of NiO/YSZ composite powders synthesized by GNP, the Ni/YSZ pellet showed ideal microstructure very fine Ni Particles of 3-5${\mu}{\textrm}{m}$ were distributed uniformly and fine pores around Ni metal particles were formed, thus, leading to an increase of the triple phase boundary among gas, Ni and YSZ.Z.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.99-102
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• 2003

Many researches on synthesis process for BSCCO precursor powders have been developed for high J$_{c}$ BSCCO-2223/Ag tape. Spray pyrolysis method for fabrication of precursor powder has many advantages, such as high purity, fine particle size of BSCCO precursor powder. Fine, spherical powders were prepared by ultrasonic spray pyrolysis from the aqueous solution of metal nitrates. BSCCO precursor powders were synthesized with 0.1 M concentration and heat treatment conditions. Average particle size for spray pyrolysis powders was 1.5 ~ 3 ${\mu}{\textrm}{m}$. BSCCO -2223/Ag tape was prepared by PIT method and followed by various sintering conditions. The critical current density of BSCCO-2223/Ag tape sintered in low oxygen partial pressure was ~ 23 kAcm$^{-2}$.

• 한국초전도학회:학술대회논문집
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• v.11
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• pp.52-52
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• 2001

• Bulletin of the Korean Chemical Society
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• v.33 no.1
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• pp.153-158
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• 2012

The hydrogenation of $AlB_2$-type BaGaGe exhibits a metal to insulator (MI) transition, inducing a puckering distortion of the original hexagonal [GaGe] layers. We investigate the electronic structure changes associated with the hydrogen-induced MI transition, using extended H$\ddot{u}$ckel tight-binding band calculations. The results indicate that hydrogen incorporation in the precursor BaGaGe is characterized by an antibonding interaction of $\pi$ on GaGe with hydrogen 1s and the second-order mixing of the singly occupied antibonding $\pi^*$ orbital into it, through Ga-H bond formation. As a result, the fully occupied bonding $\pi$ band in BaGaGe changes to a weakly dispersive band with Ge pz (lone pair) character in the hydride, which becomes located just below the Fermi level. The Ga-Ge bonds within a layered polyanion are slightly weakened by hydrogen incorporation. A rationale for this is given.

• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.815-820
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• 2011

Three kinds of organometallic compounds (chromium acetylacetonate, magnesium acetate and vanadyl acetylacetonate) were used as transition metal precursor, titanium n-butoxide and multi-walled carbon nanotube as titanium and carbon precursor to prepare metal oxide-CNT/$TiO^2$ composites. The surface properties and morphology of metal oxide-CNT/$TiO^2$ composites were by Brauer-Emett-Teller (BET) surface area measurement, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis. The photocatalytic activity of prepared metal oxide-CNT/$TiO^2$ composites was determined by the degradation effect of methylene blue in an aqueous solution under irradiation of visible light.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.76.2-76.2
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• 2013

Advanced electronic application areas have strongly required new materials due to the continuous shrinking dimensions of their devices. Specially, the development and use of metal precursors for atomic layer deposition has been extensively focused on application to electronic devices. Thus the systematic design and synthesis of metal compounds with relevant chemical and physical properties, such as stability, volatility, and resistance to air and moisture are very important in the vacuum deposition fields. In many case, organic ligands for metal precursors are especially focused in the related research areas because the large scale synthesis of the metal complexes with excellent properties exclusively depends on the potential usefulness of the ligands. It is recommended for metal complexes to be in monomeric forms because mononuclear complexes generally show high vapor pressures comparing with their oligomeric structure such as dimer and trimer. Simple metal alkoxides complexes are involatile except several examples such as Ti(OiPr)4, Si(OEt)4, and Hf(OtBu)4. Thus the coordinated atom of alkoxide ligands should be crowded in its own environment with some substituents by prohibiting the coordinated atoms from bonding to another metal through oxygen-bridging configuration. Alkoxide ligands containing donor-functionalized group such as amino and alkoxy which can induce the increasing of the coordinative saturation of the metal complexes and the decreasing of the intermolecular interaction between or among the metal compounds. In this presentation, we will discuss the development of metal compounds which adopted donor-functionalized alkoxide ligands derived from their alcohols for electronic application. Some recent results on ALD using metal precursors such as tin, nickel, ruthenium, and tungsten developed in our group will be disclosed.

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.155-162
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• 1999

Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.