• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1555-1562
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• 2015

Metal oxide semiconductors have been applied in several areas, such as solar cells, sensor, optical elements and displays, due to the high surface area, unique electrical and optical characteristics. Zinc oxide among the metal oxide has excellent physicochemical properties. Zinc oxide is a n-type semiconductor with a wide direct transition band gap of 3.37 eV at room temperature and large exciton binding energy of 60 meV. Cation-doped zinc oxide studies were conducted to complement the electrical and optical characteristics. In this paper, Al-doped ZnO was synthesized by hydrothermal synthesis using microwaves. ZnO was synthesized by adjusting the precursor ratio and using different dopants. The optimal ZnO synthesis conditions for crystal shape and optical properties were determined. The optical properties of aluminum doped zinc oxide were then examined by SEM, XRD, PL, UV-vis absorbance spectrum, and EDS.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.231-235
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• 2019

We investigated the facile and effective strategy for sensitive and selective $C_2H_5OH$ sensors based on the In-decorated NiO nanoigloos. The In-decorated NiO nanoigloos is fabricated by RF sputtering using 750 nm-diameter polystyrene beads using a soft-template. The morphological evolution based on the Van der Drift model was generated through a heterojunction between In metal and NiO, resulting in a pyramidal rough surface. Upon decorating the In on the NiO surface, high sensitivity and selectivity to $C_2H_5OH$ were observed, and gas sensing mechanism was demonstrated by a high surface-to-volume and double Schottky barrier. We are confident that the method presented in this study will have a significant impact on the fabrication of effective nanostructures and their application for the gas sensors.

• Journal of Powder Materials
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• v.24 no.6
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• pp.483-488
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• 2017

Transition-metal oxide semiconductors have various band gaps. Therefore, many studies have been conducted in various application fields. Among these, methods for the adsorption of organic dyes and utilization of photocatalytic properties have been developed using various metal oxides. In this study, the adsorption and photocatalytic effects of $WO_3$ nanomaterials prepared by hydrothermal synthesis are investigated, with citric acid added in the hydrothermal process as a structure-directing agent. The nanostructures of $WO_3$ are studied using transmission electron microscopy and scanning electron microscopy images. The crystal structure is investigated using X-ray diffraction patterns, and the changes in the dye concentrations adsorbed on $WO_3$ nanorods are measured with a UV-visible absorption spectrophotometer based on Beer-Lambert's law. The methylene blue (MB) dye solution is subjected to acid or base conditions to monitor the change in the maximum adsorption amount in relation to the pH. The maximum adsorption capacity is observed at pH 3. In addition to the dye adsorption, UV irradiation is carried out to investigate the decomposition of the MB dye as a result of photocatalytic effects. Significant photocatalytic properties are observed and compared with the adsorption effects for dye removal.

• Journal of Sensor Science and Technology
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• v.22 no.4
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• pp.286-291
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• 2013

This paper presents to analyze patterns from single and complex malodors using gas sensor array based on metal oxide semiconductors. The aim of research is to identify and discriminate single malodors such as $NH_3$, $CH_3SH$ and $H_2S$ and their mixtures according to concentration levels. Measurement system for analyzing patterns from malodors is constructed by an array of metal oxide semiconductor sensors which are available commercially together with associate electronics. The patterns from sensory system are analyzed by Principal Component Analysis (PCA) which is simple statistical pattern recognition technique. Throughout the experimental trails, we confirmed the experimental procedure for measurement system such as sensors calibration time and gas flow rate, and discriminated malodors using pattern analysis technique.

• Journal of Sensor Science and Technology
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• v.28 no.3
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• pp.139-145
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• 2019

Precautionary detection of chemical warfare agents (CWAs) has been an important global issue mainly owing to their toxicity. To achieve proper detection, many studies have been conducted to develop sensitive gas sensors for CWAs. In particular, metal-oxide semi-conductors (MOS) have been investigated as promising sensing materials owing to their abundance in nature and excellent sensitivity. In this review, we mainly focus on various MOS-based gas sensors that have been fabricated for the detection of two specific CWA simulants, 2-chloroethyl ethyl sulfide (2-CEES) and dimethyl methyl phosphonate (DMMP), which are simulants of sulfur mustard and sarin, respectively. In the case of 2-CEES, we mainly discuss $CdSnO_3-$ and ZnO-based sensors and their reaction mechanisms. In addition, a method to improve the selectivity of ZnO-based sensors is mentioned. Various sensors and their sensing mechanisms have been introduced for the detection of DMMP. As the reaction with DMMP may directly affect the sensing properties of MOS, this paper includes previous studies on its poisoning effect. Finally, promising sensing materials for both gases are proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.169-169
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• 2010

As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.314-319
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• 2014

Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.407-411
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• 2020

In this study, we propose an array-type gas sensor with high selectivity and response using multiple oxide semiconductors. The sensor array was composed of SnO₂ and In₂O₃, and the detection characteristics were improved by using Pt, Au, and Pd catalysts. All samples were deposited directly on the Pt interdigitated electrode (IDE) through the e-beam evaporator glancing angle deposition (GAD) method. They grew in the form of well-aligned nanorods at off-axis angles. The prepared SnO₂ and In₂O₃ nanorod samples were exposed to CH₃COCH₃, C₇H₈, and NO₂ gases in a 300℃ dry condition. Au-decorated SnO₂, Au-decorated In₂O₃, and Pd-decorated In₂O₃ exhibited high selectivity for CH₃COCH₃, C₇H₈, and NO₂, respectively. They demonstrated a high detection limit of the sub ppb level computationally. In addition, measurements from each sensor were executed in the 40% relative humidity condition. Although there was a slight reduction in detection response, high selectivity and distinguishable detection characteristics were confirmed.