• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Journal of IKEEE
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• v.15 no.2
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• pp.143-148
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• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.381-383
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• 2021

Light-activated metal oxide gas sensors have been investigated in recent decades. Light illumination enhances the sensing attributes, including the operational temperature, sensitivity, and selectivity. Unfortunately, high operating temperature is a major problem for gas sensors because of the huge energy consumption. Therefore, the importance of light-activated room-temperature sensing has increased. This paper reviews recent light-activated sensors and their sensing mechanisms with a specific focus on metal oxide gas sensors. Studies use the outstanding ZnO and SnO₂ sensors to research photoactivation when illuminated by various sources such as ultraviolet (UV), halogen lamp, or monochromatic light. Photon induction generates electron-hole pairs that increase the number of adsorption sites of gas molecules and ions improving the sensor's sensing properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.64.1-64.1
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• 2012

Next generation displays such as high performance LCD, AMOLED, flexible display and transparent display require specific TFT back-planes. For high performance TFT back-planes, low temperature poly silicon (LTPS), and metal-oxide semiconductors are studied. Flexible TFT backplanes require low temperature processible organic semiconductors. Not only development of active semiconducting materials but also design and synthesis of semiconductor corresponding gate dielectric materials are important issues in those display back-planes. In this study, we investigate the high heat resistant polymeric gate dielectric materials for organic TFT and inorganic TFT with good insulating properties and processing chemical resistance. We also controlled and optimized surface energy and morphology of gate dielectric layers for direct printing process with solution processible organic and inorganic semiconductors.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.377-384
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• 2019

People currently spend more than 80% of their time indoors; therefore, the management of indoor air quality has become an important issue. The contamination of indoor air can cause sick house syndrome and various environmental diseases such as atopy and nephropathy. Formaldehyde gas, which is the main contaminant of indoor air, is lethal even with microscopic exposure; however, it is commonly used as an adhesive and waterproofing agent for indoor building materials. Therefore, there is a need for a gas sensor capable of detecting trace amounts of formaldehyde gas. In this review, we summarize recent studies on metal oxide-based semiconductor gas sensors for formaldehyde gas detection, methods to improve the gas-sensing properties of metal oxides of various dimensions, and the effects of catalysts for the detection of parts-per-billion level gases. Through this, we discuss the necessary characteristics of the metal oxidebased semiconductors for gas sensors for the development of next-generation sensors.

• Vacuum Magazine
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• v.5 no.2
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• pp.18-22
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• 2018

wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.1-5
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• 2021

Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.48-55
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• 2024

Metal-oxide-based semiconductor gas sensors are widely used because of their advantages, such as high response and simple sensing mechanism. Recently, with the rapid progress in sensor networks, computing power, and microsystem technology, sensor applications are expanding to various fields, such as food quality control, environmental monitoring, healthcare, and artificial olfaction. Therefore, the development of highly selective gas sensors is crucial for practical applications. This article reviews the developments in novel sensor design consisting of sensing films and physical and chemical filters for highly selective gas sensing. Unlike conventional sensors, the sensor structures with filters can separate the sensing and catalytic reactions into independent processes, enabling selective and sensitive gas sensing. The main objectives of this study are directed at introducing the role of various filters in gas-sensing reactions and promising sensor applications. The highly selective gas sensors combined with a functional filter can open new pathways toward the advancement of high-performance gas sensors and electronic noses.

• Journal of Sensor Science and Technology
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• v.31 no.4
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• pp.187-193
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• 2022

The accurate detection of environmental and biomarker gas species has attracted increasing attention due to their broad applications, such as air quality monitoring, disease diagnosis, and explosive chemicals detection. To accurately detect target gas species using chemiresistive gas sensors, using nanocatalysts on semiconducting metal oxides (SMOs) is considered the most promising approach. This review summarizes recent studies on methods for nanocatalysts functionalization on SMOs to achieve the highly selective gas sensors. To this end, we discuss various nanocatalyst decorated metal oxide-based chemiresistive gas sensors and provide an insight to construct highly accurate gas sensors.