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http://dx.doi.org/10.5757/vacmac.5.2.18

Trend and Issues of van der Waals 2D Semiconductor Devices  

Im, Seongil (반데르발스 물질연구센터)
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Vacuum Magazine / v.5, no.2, 2018 , pp. 18-22 More about this Journal
Abstract
wo dimensional (2D) van der Waals (vdW) nanosheet semiconductors have recently attracted much attention from researchers because of their potentials as active device materials toward future nano-electronics and -optoelectronics. This review mainly focuses on the features and applications of state-of-the-art vdW 2D material devices which use transition metal dichalcogenides, graphene, hexagonal boron nitride (h-BN), and black phosphorous: field effect transistors (FETs), complementary metal oxide semiconductor (CMOS) inverters, Schottky diode, and PN diode. In a closing remark, important remaining issues of 2D vdW devices are also introduced as requests for future electronics and photonics applications.
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