• 대한전자공학회논문지
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• 제26권7호
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• pp.83-89
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• 1989

강유전성 $PbTiO_3$ 박막을 rf스터링으로 기판온도 $100{\sim}150^{\circ}C$에서 형성시켰다. 이 박막의 구조는 X선 회절결과 비정질 형태로 파이로클로어 구조를 갖고 있었다. 이 박막을 열에 의해 어닐링한 경우는 $550^{\circ}C$에서, 레이저의 주사로 어닐링한 경우는 레이저 출력이 50watts일때 가장 우수한 결정 구조를 구할 수 있었다. 집합에서의 계면 특성을 구하기 위하여 MFS(metal-ferroelectric-semiconductor)및 MFOS(metal-ferroelectric-oxide-semiconductor) 구조를 형성하여 C-V특성을 조사하였다. 이때 MFS보다 MFOS의 경우가 Si표면에 sputter에 의한 결함이 작음을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제12권6호
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.43-51
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• 2023

본 논문에서는 전기차 전력변환 시스템의 근간이 되는 전력반도체 소자의 발전 방향과 차세대 전력반도체 소자인 wide bandgap (WBG)의 특징에 관해 소개하고자 한다. 현재까지의 주류인 Si insulated gate bipolar transistor (IGBT)의 특징에 관해 소개하고, 제조사 별 Si IGBT 개발 방향에 대해 다루었다. 또한 대표적인 WBG 전력반도체 소자인 SiC metal-oxide-semiconductor field-effect transistor (MOSFET)이 가지는 특징을 고찰하여 종래의 Si IGBT 소자 대비 SiC MOSFET이 가지는 효용 및 필요성에 대해 서술하였다. 또한 현 시점에서의 GaN 전력반도체 소자가 가지는 한계 및 그로 인해 전기자동차용 전력변환모듈 용으로 사용하기에 이슈인 점을 서술하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• 반도체디스플레이기술학회지
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• 제9권1호
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• pp.29-33
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• 2010

Recently, the growth of ZnO thin film on glass substrate has been investigated extensively for transparent thin film transistor. We have studied the phase transition of ZnO thin films from metal to semiconductor by changing RF power in the deposition process by RF magnetron sputtering system. The structural, electric, and optical properties of the ZnO thin films were investigated. The film deposited with 75 watt of RF power showed n-type semiconductor characteristic having suitable resistivity $-3.56\;{\times}\;10^{+1}\;{\Omega}cm$, carrier concentration $-2.8\;{\times}\;10^{17}\;cm^{-3}$, and mobility $-0.613\;cm^2V^{-1}s^{-1}$ while other films by 25, 50, 100 watt of RF power closed to metallic films. From the surface analysis (AFM), the number of crystal grain of ZnO thin film increased as RF power increased. The transmittance of the film was over 88% in the visible region regardless of the change in RF power.

• 반도체디스플레이기술학회지
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• 제9권2호
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• pp.7-10
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• 2010

In this paper, we design a modem SoC (System on Chip) for low power consumption and high speed wireless communications. Among various schemes of high speed communications, an MB-OFDM (Multi Band-Orthogonal Frequency Division Multiplexing) UWB (Ultra-Wide-Band) chip is designed. The MB-OFDM uses wide-band frequency to provide high speed data rate. Additionally, the system imposes no interference to other services. The 90nm CMOS (Complementary Metal-Oxide Semiconductor) technology is used for the SoC design. Especially, power management mode is implemented to reduce the power consumption.

• 대한전자공학회논문지
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• 제22권4호
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• pp.76-83
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• 1985

RMOS(refractory metal oxide semiconductor)의 게이트와 집적회로의 각 소자나 회로를 연결하는 연결선으로 사용되는 Mo2N/Mo 이중층을 Ar과 N2의 혼합가스 분위기에서 저온의 고주파 반응성스펏터링으로 형성하였다. 1000Å-Mo2N/4000Å-Mo이중층의 면저항은 약 1.20∼1.28Ω/구로서 다결정실리콘의 약 1/10정도가 되었다. C-V측정으로부터 Mo2N/Mo이중층과 비저항이 6∼9Ω·㎝이고 결정면이 (100)인 P형 Si과의 일함수차 f%5는 약 -0.30ev 및 산화층에 존재하는 고정전하밀도 Qss/q는 약 2.1x1011/cm를 얻었다. 인버터 한개당의 신호전달 지연시간을 측정하기 위해 다결정실리콘게이트 NMOS 제조공정을 웅용하여 45개의 인버터로 구성된 ring oscillator를 제작하였다. 본 실험에서 얻을 수 있었던 인버터 한개에 대한 신호전달지연시간은 약 0.8nsec였다.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.333-335
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• 1997

This paper was performed to investigate the characteristic of the Pt-MIS(Metal Insulator Semiconductor) capacitor composed of the LPCVD nitride on the oxide for the hydrogen gas detection. Pt was used as catalytic metal for detecting the hydrogen gas and the flat band voltage shift was measured at various hydrogen concentration and catalytic metal thickness. We found the flat band voltage shift was proportional to the hydrogen concentration and catalytic metal thickness was little effect to the response time.