• 한국생산제조학회지
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• 제21권3호
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• pp.408-414
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• 2012

Screen printing is a printing method that uses a woven mesh to support an ink-blocking stencil by transferring ink or other printable materials in order to form an image onto a substrate. Recently, the screen printing method has applied to micro-electronic packaging by using solder paste as a printable material. For the screen printing of solder paste, metal masks containing a number of micro-holes are used as a stencil material. The metal mask undergoes deformation when it is installed in the screen printing machine, which results in the deformation of micro-holes. In the present study, finite element (FE) analysis was performed to predict the amount of deformation of a metal mask. For an efficient calculation of the micro-holes of the metal mask, the sub-domain analysis method was applied to perform FE analyses connecting the global domain (the metal mask) and the local domain (micro-holes). The FE analyses were then performed to evaluate the effects of slot designs on the deformation characteristics, from which more uniform and adjustable deformation of the metal mask can be obtained.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Current Photovoltaic Research
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• 제9권1호
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• pp.6-10
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• 2021

The mesh mask screen, which is generally used for screen printing metallization of silicon solar cell, requires high squeegee pressure and low printing speed. These requirements are acting as a limiting factor in production yield in photovoltaic industries. In order to improve the productivity, a metal mask, which has high durability and high printing speed, has been researched. In this paper, the characteristics of each solar cell, in which electrodes were formed by using a metal mask and a mesh mask, were analyzed through recombination current density. In particular, the metal-induced recombination current density (Jom) representing the recombination of the emitter-metal interface was calculated using the shading method, and the resulting efficiency and open-circuit voltage were analyzed through the diode equation. As a result of analyzing the proportion of the metal-induced recombination current density to the total emitter recombination current density, it was analyzed that the reduction of the metal-induced recombination current density through the metal mask is an important factor in reducing the total recombination current density of the solar cell.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2006년도 춘계학술대회 논문집
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• pp.314-317
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• 2006

Electroformed part is widely used in modem manufacturing industries, especially semi-conductor division. It is basically a specialized form of electroplating. So, it has very similar parameters with electroplating. The object of this study is development of the fine metal mask by electroforming process. In this paper considered two parameters. The first is relationship of UV exposure and soft baking time. The other one is thickness uniformity of electroformed parts by distance of between electrodes. This paper presents the fabrication method of fine metal mask by electroforming process.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.140.2-140
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• 2001

In this paper, we develop the system which inspects the metal mask using area scan camera and belu type xy-table and introduce its inspection algorithm. Thes whole area of the metal mask is divides into several inspection block and the sixe of a inspection block is decided by FOV(Field of View). To compare with the camera image of each block, the reference image is made by gerber file. The ratation angle of the metal mask is calculated through the linear equation that is substituted two end points of horizontal boundary of a specific hole in a camera image for. To calculate the position error caused by belt type xy-table, hough-transform using the distances among the holes in two images os used. The center of the reference image is moved as much as the calculated position error to be coincide with the camera image ...

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 추계학술대회 논문집
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• pp.265-266
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• 2008

• 전자공학회논문지SC
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• 제40권2호
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• pp.1-9
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• 2003

본 논문에서는 ASC(Area Scan Camera)를 이용한 비젼시스템과 belt type xy-table을 사용하여 metal mask의 홀 생성유무 검사시스템을 개발하고, 적용할 수 있는 알고리즘을 소개한다. Metal mask의 전체 영역을 일정한 크기의 검사영역으로 분할한다. 각각의 검사영역의 크기는 ASC의 FOV(Field of View)와 동일하다. 이때 belt type xy-table에서 발생하는 위치오차를 고려하여 일정영역을 중첩하여 분할한다. 검사블록에 대한 카메라이미지는 gerber 파일을 이용하여 생성한 기준이미지와 비교된다. 검사장치에 장착된 metal mask의 회전각도를 계산하기 위하여 존재하는 가장 큰 홀에 대한 카메라이미지를 획득하고, 홀의 수평 에지를 추출한 후 직선의 방정식을 이용한다. Belt type xy-table의 backslash와 같은 기계적 결함에 의해 기준 이미지와 카메라이미지에 존재하는 홀 사이에는 위치오차가 존재한다. 두 이미지를 일치시키기 위해 각 이미지에 존재하는 홀의 무게중심점을 이용한 HT(Hough-Transform)을 사용하여 위치오차정보를 추출하고, 기준이미지의 중심점을 이동시킨다. 각각의 이미지에 존재하는 홀에 대한 무게중심점, 면적, 가로길이, 세로길이 등의 정보를 레이블링을 통하여 구한다. 두 이미지에 존재하는 홀의 무게중심점과 면적을 이용하여 홀의 생성 유무를 판단한다. 그리고 실제로 시스템을 제작하여 위 알고리즘을 적용한다.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.