• Korean Journal of Materials Research
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• v.20 no.10
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• pp.513-517
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• 2010

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.70-77
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• 2003

It is well Down that the growth of carbon nanotubes (CNTs) by chemical vapor deposition (CVD) using a transition metal catalyst is greatly enhanced in a nitrogen environment. We show here that the enhanced growth is closely related to the activated nitrogen and it's incorporation into the CNT wall and cap during growth. This behavior is consistent with theoretical calculations of CNx thin films, showing that nitrogen incorporation to the graphitic basal plane reduces the elastic strain energy for curving the graphitic layer. Enhanced CNT growth by nitrogen incorporation is thus due to a decrease in the activation energies required for nucleation and growth of the tubular graphitic layer.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.96-101
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• 2003

Direct evidence on the incorporation of high concentration of oxygen into undoped AlGaN layers for the AlGaN/GaN heterostuctures is provided by scanning photoemission microscopy using synchrotron radiation. In-situ annealing at $1000^{\circ}C$ resulted in a significant increase in the oxygen concentration at the AlGaN surface due to the predominant formation of Al-O bonds. The oxygen incorporation into the AlGaN layers resulting from the high reactivity of Al to oxygen can enhance the tunneling-assisted transport of electrons at the metal/AlGaN interface, leading to the reduction of the Schottky barrier height and the increase of the sheet carrier concentration near the AlGaN/GaN interface.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.252-258
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• 2013

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

• 한국전기화학회:학술대회논문집
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• 2003.11a
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• pp.153-168
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• 2003

Polymer electrolytes - solid polymeric membranes with dissolved salts - are being intensively studied for use in all-solid-state lithium-metal-polymer consumer electronic device. The low ionic conductivity at room temperature of existing polymer electrolytes, however, has seriously hindered the development of such batteries for many applications. The incorporation of salts molten at room temperature (room temperature ionic liquids or RTILs) into polymer electrolytes may be the necessary solution to overcoming the inherent ionic conductivity limitations of 'dry' polymer electrolytes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.458-466
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• 2012

A Dual metal gate stack cylindrical/ surrounded gate MOSFET (DMGSA CGT/SGT MOSFET) has been proposed and an analytical model has been developed to examine the impact of this structure in suppressing short channel effects and in enhancing the device performance. It is demonstrated that incorporation of gate stack along with dual metal gate architecture results in improvement in short channel immunity. It is also examined that for DMGSA CGT/SGT the minimum surface potential in the channel reduces, resulting increase in electron velocity and thereby improving the carrier transport efficiency. Furthermore, the device has been analyzed at different bias point for both single material gate stack architecture (SMGSA) and dual material gate stack architecture (DMGSA) and found that DMGSA has superior characteristics as compared to SMGSA devices. The analytical results obtained from the proposed model agree well with the simulated results obtained from 3D ATLAS Device simulator.

• Journal of the Korea Furniture Society
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• v.27 no.4
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• pp.392-398
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• 2016

Wood-plastic composites (WPCs) composed of mainly wood flour and thermoplastics have attracted considerable attentions due to advantages of cost effectiveness, high durability, and microbial resistance. However, relatively poor fire resistance of WPCs from low thermal stability of wood and plastics prevents further uses. This study investigated the effect of expandable graphite (EG) and aluminium hydroxide (AH)/magnesium hydroxide (MH) on the properties of WPCs. The combined incorporation of both EG and metal hydroxide (i.e., AH or MH) into formulations leads to higher flexural modulus of filled composites compared to neat PP and WPC. In thermal properties, EG played an important role in improving thermal stability of filled composites by suppressing thermal decompositions of wood and PP. Moreover, EG showed better water absorption features. From this research, it can be said that EG and metal hydroxides have potentials as effective reinforcement, flame retardant, and moisture barrier.

• Journal of the Korean Wood Science and Technology
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• v.50 no.6
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• pp.427-435
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• 2022

For effective applicability of reinforced cork, cork composites reinforced with metal, glass fiber, and carbon fiber were developed, and the effects of the reinforcing materials on the mechanical properties of cork composites were investigated. The bending moduli of elasticity (MOE) of cork composites were in the 32.7-35.9 MPa range, while the bending strength values were in the 1.62-1.73 MPa range. The strength performance decreased in the order cork-metal > cork-carbon fiber > cork-glass fiber. The bending MOEs were improved by 29%-41% compared with simple cork boards, while the bending strengths of reinforced cork were 35%-45% higher. The strength performance significantly improved following the incorporation of thin mesh materials into the middle layer of the studied cork composites. The bending strains of the cork composites were remarkably higher compared with oak wood, making them promising for applications that require bending processing, such as curved jointing. The internal bond strengths of the cork composites were 0.26-0.44 MPa, approximately 0.36-0.60 times lower compared with medium-density fiber boards.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.27-30
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• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.2
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• pp.141-146
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• 2002

The effect of the wide-bandgap Schottky barrier enhancement cap layer on the performance of metal-semiconductor-metal photodetectors (MSMPD's) is presented. Judged by the dc characteristics, no considerable increase in recombination loss of carriers is resulted by the incorporation of the cap layer. However, about 45% of the detection efficiency is lost for the cap-layered MSMPD's even with a graded layer incorporated under pulse operation, and it was found to be due mainly to the capturing and slow release of the photocarriers at the heterointerface. The loss mechanism of the pulse detection efficiency is believed to be responsible for the intersymbol interference and the increased bit-error-rate (BER) observed in MSMPD's when used with a high bit rate pseudo-random-bit-stream (PRBS) data pattern.