• 제목/요약/키워드: Metal film

검색결과 2,176건 처리시간 0.029초

마이크로 프로브 기반 열전 센서 제작 기술 (Fabrication of a Micro-thermoelectric Probe)

  • 장원석;최태열
    • 대한기계학회논문집B
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    • 제35권11호
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    • pp.1133-1137
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    • 2011
  • 마이크로 수준에서의 온도측정을 위하여 유리 피펫 기반의 프로브형 온도센서를 제작하였다. 이를 이용하여 정밀도 ${\pm}$ 0.1 K 를 가지는 온도측정 보정 실험을 수행하였다. 본 연구에서 제작한 방식은 저온의 용융점을 갖는 솔더합금(Sn)을 피펫에 내부에 주입하고 외부에 니켈(Ni) 코팅을 하여 열전대를제작함으로써 저비용의 프로브형 온도센서를 구현하였다. 제작된 센서 팁 끝단의 지름은 5 Am 에서 30 Am 로 피펫을 가열하여 당기는 방식으로 프로브 끝단의 크기를 조절하였다. 제작된 온도센서는 챔버내에서 정밀하게 제어된 온도 조절기를 사용하여 보정하였으며, 이를 통하여 얻어진 열전계수의 범위는 8.46 에서 $8.86{\mu}V$/K 의 값을 얻었다. 이를 이용하면 MEMS 소자, 세포, 티슈 등의 바이오 소재의 온도 및 열특성 측정용 프로브로 활용할 수 있을 것으로 생각된다.

탄소나노 튜브위에 성장된 Pd 및 Pt 나노 입자의 제조 및 특성 (Synthesis and Property of Carbon Nanotube-Supported Pd and Pt Nanoparticles)

  • 김형균;이임렬
    • 한국재료학회지
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    • 제19권4호
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    • pp.192-197
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    • 2009
  • Carbon nanotubes (CNT) were used as a catalyst support where catalytically active Pd and Pt metal particles decorated the outside of the external CNT walls. In this study, Pd and Pt nanoparticles supported on $HNO_3$-treated CNT were prepared by microwave-assisted heating of the polyol process using $PdCl_2$ and $H_2PtCl_6{\codt}6H_2O$ precursors, respectively, and were then characterized by SEM, TEM, and Raman. Raman spectroscopy showed that the acid treated CNT had a higher intensity ratio of $I_D/I_G$ compared to that of non-treated CNT, indicating the formation of defects or functional groups on CNT after chemical oxidation. Microwave irradiation for total two minutes resulted in the formation of Pd and Pt nanoparticles on the acid treated CNT. The sizes of Pd and Pt nanoparticles were found to be less than 10 nm and 3 nm, respectively. Furthermore, the $SnO_2$ films doped with CNT decorated by Pd and Pt nanoparticles were prepared, and then the $NO_2$ gas response of these sensor films was evaluated under $1{\sim}5\;ppm$ $NO_2$ concentration at $200^{\circ}C$. It was found that the sensing property of the $SnO_2$ film sensor on $NO_2$ gas was greatly improved by the addition of CNT-supported Pd and Pt nanoparticles.

전기분사를 이용한 양성담관 협착 치료용 약물방출 스텐트 개발 (Development of Drug Eluting Stent for the Treatment of Benign Biliary Stricture by Electro-spray Method)

  • 신일균;김동곤;김한기;김상호;전동민;서태석;장홍석
    • 폴리머
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    • 제36권2호
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    • pp.163-168
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    • 2012
  • 최근에 내시경 관련기술의 진보에 따라서 시술 편리성, 회복시간 단축, 환자 고통 경감 등의 장점으로 인해 스텐트 삽입술이 빠르게 진보하였다. 본 연구에서 양성담관 협착 치료를 목적으로 파클리탁셀을 이용한 약물방출 스텐트를 전기분사 방법에 의해 제조하였으며, 이 때 사용된 고분자는 polyether-based polyurethane(상표명 : PELLETHANE 2363-80AE$^{(R)}$)과 첨가제로서 Pluronic F127, 약물로서 파클리탁셀을 사용하여 금속스텐트 표면에 코팅하였다. 그 결과로서, 약물이 코팅된 고분자 필름의 물리적 특성은 SEM, FTIR, 접촉각 측정기, XRD에 의해 확인하였으며, 약물방출속도는 약물함량이 높을수록 감소하였음을 알 수 있었다.

Pt/$TiO_2$/$SiO_2$/Si 기판 위에 제조된 $YMnO_3$박막의 강유전 특성에 미치는 ${Y_2}{O_3}$버퍼층의 영향 (Effects of ${Y_2}{O_3}$Buffer Layer on Ferroelectric Properties of $YMnO_3$Thin Films Fabricated on Pt/$TiO_2$/$SiO_2$/Si Substrate)

  • 김제헌;강승구;은희태
    • 한국세라믹학회지
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    • 제37권11호
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    • pp.1097-1104
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    • 2000
  • MOD(Metal-Organic-Decomposition)법에 의해 $Y_2$O$_3$버퍼층에 Pt/TiO$_2$/SiO$_2$/Si 기판 위에 제조한 후, 그 표면 위에 졸-겔 방법으로 YMnO$_3$박막을 형성하였다. 기판의 종류와 수화조건 변화가 YMnO$_3$박막의 결정화 거동에 미치는 영향을 고찰하였으며, 또한 $Y_2$O$_3$버퍼층 유.무에 따른 Mn의 산화상태를 확인하고 이에 따른 유전특성 변화를 연구하였다. $Y_2$O$_3$버퍼층을 삽입하지 않고 직접 기판 위에 형성한 YMnO$_3$박막의 결정상은 기판의 종류 및 Rw 변화에 관계없이 orthorhombic 구조임이 확인되었다. 반면, $Y_2$O$_3$버퍼층 위에 형성된 YMnO$_3$박막의 경우에는 Rw($H_2O$/alkoxide mole ratio)가 0~6 범위 내에서 낮아질술고 hexagonal 결정상 성장에 유리하였으며, 또한 Pt(111)/TiO$_2$/SiO$_2$/Si 기판이 Ptd(200)/TiO$_2$/SiO$_2$/Si에 비하여 결정상 형성에 용이하였다. $Y_2$O$_3$버퍼층은 YMnO$_3$결정상 내에서 $Mn^{4+}$ 이온형성을 억제함으로써 누설전류밀도가 크게 감소되는 효과를 주었으며, 동시에 강유전 특성을 지닌 hexagonal 결정상 형성에 유리하게 작용하였다. 결론적으로, $Y_2$O$_3$는 Pt가 코팅된 Si 기판 위에 YMnO$_3$박막 제조시 그 강유전 특성을 향상시켜주는 우수한 버퍼층 재료임을 확인하였다.

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Effects of Lanthanides-Substitution on the Ferroelectric Properties of Bismuth Titanate Thin Films Prepared by MOCVD Process

  • Kim, Byong-Ho;Kang, Dong-Kyun
    • 한국세라믹학회지
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    • 제43권11호
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    • pp.688-692
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    • 2006
  • Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

터널 산화막 두께에 따른 Al2O3/Y2O3/SiO2 다층막의 메모리 특성 연구 (A Study of the Memory Characteristics of Al2O3/Y2O3/SiO2 Multi-Stacked Films with Different Tunnel Oxide Thicknesses)

  • 정혜영;최유열;김형근;최두진
    • 한국세라믹학회지
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    • 제49권6호
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    • pp.631-636
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    • 2012
  • Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

A Simple Plane-Shaped Micro Stator Using Silicon Substrate Mold and Enamel Coil

  • Choi, Ju Chan;Choi, Young Chan;Jung, Dong Geun;Lee, Jae Yun;Min, Seong Ki;Kong, Seong Ho
    • 센서학회지
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    • 제22권5호
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    • pp.333-337
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    • 2013
  • This study proposes a simply fabricated micro stator for higher output power than previously reported micro stators. The stator has been fabricated by inserting enamel coil in silicon mold formed by micro etching process. The most merits of the proposed micro stator are the simple fabrication process and high output power. Previously reported micro stators have high resistance because the micro coil is fabricated by relatively thin-film-based deposition process such as sputtering and electroplating. In addition, the previously reported micro coil has many electrical contact points for forming the coil structure. These characteristics of the micro stator can lead to low performance in output power. However, the proposed micro stator adopts commercially available enamel coil without any contact point. Therefore, the enamel coil of the proposed micro stator has low junction resistance due to the good electrical quality compared with the deposited or electroplated metal coil. Power generation tests were performed and the fabricated stator can produce 5.4 mW in 4000 RPM, $1{\Omega}$ and 0.3 mm gap. The proposed micro stator can produce larger output power than the previously reported stator spite of low RPM and the larger gap between the permanent magnet and the stator.

Polyimide 기판을 이용한 CVD-Cu 박막 형성기술 (Formation of CVD-Cu Thin Films on Polyimide Substrate)

  • 조남인;임종설;설용태
    • 한국산학기술학회논문지
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    • 제1권1호
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    • pp.37-42
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    • 2000
  • 유기금속 화학기상증착기술에 의해 폴리이미드 기판과 질화티탄 기판 위에 구리박막을 형성하였다. 구리박막을 화학기상증착기술에 의해 형성하면 종래의 물리적증착기술에 비하여 증착속도가 빠르고 층덮힘 성질이 좋아 산업체의 제품생산 응용에서 많은 장점이 있다. 이 장점은 제품의 생산성과 신뢰성에 영향을 미친다. 기판의 온도와 구리전구체 증기압력 조건을 변화시키며 반복실험을 실시하였으며, 시편에 따라서는 전기적 성질 향상을 위하여 후속 열처리를 수행하였다. 형성된 구리박막의 미세구조는 전자현미경으로 관찰하였으며, 전기비저항은 4점 프로브를 이용하여 측정하였다. 질화티탄을 기판으로 사용한 경우 구리박막에서는 섭씨 180도의 기판온도에서 만들어진 시편에서 가장 좋은 전기적 성질이 측정되었다. 한편, 폴리이미드 기판을 사용한 경우, 기상과 액상의 혼합상태 전구체를 이용하여 250 nm/min의 매우 높은 증착속도를 얻을 수 있었다.

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금속 유기 분자 빔 에피택시로 성장시킨 $HfO_2$ 박막의 특성과 공정변수가 박막의 성장 및 특성에 미치는 영향 (Characteristics and Processing Effects Of $HfO_2$ Thin Films grown by Metal-Organic Molecular Beam Epitaxy)

  • 김명석;고영돈;남태형;정민창;명재민;윤일구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.74-77
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    • 2004
  • [ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.

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APPLICATION OF COLD SPRAY COATING TECHNIQUE TO AN UNDERGROUND DISPOSAL COPPER CANISTER AND ITS CORROSION PROPERTIES

  • Lee, Min-Soo;Choi, Heui-Joo;Choi, Jong-Won;Kim, Hyung-Jun
    • Nuclear Engineering and Technology
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    • 제43권6호
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    • pp.557-566
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    • 2011
  • A cold spray coating (CSC) of copper was studied for its application to a high-level radioactive waste (HLW) disposal canister. Several copper coatings of 10 mm thick were fabricated using two kinds of copper powders with different oxygen contents, and SS 304 and nodular cast iron were used as their base metal substrates. The fabricated CSC coppers showed a high tensile strength but were brittle in comparison with conventional non-coating copper, hereinafter defined to as "commercial copper". The corrosion behavior of CSC coppers was evaluated by comparison with commercial coppers, such as extruded and forged coppers. The polarization test results showed that the corrosion potential of the CSC coppers was closely related to its purity; low-purity (i.e., high oxygen content) copper exhibited a lower corrosion potential, and high-purity copper exhibited a relatively high corrosion potential. The corrosion rate converted from the measured corrosion current was not, however, dependent on its purity: CSC copper showed a little higher rate than that of commercial copper. Immersion tests in aqueous HCl solution showed that CSC coppers were more susceptible to corrosion, i.e., they had a higher corrosion rate. However, the difference was not significant between commercial copper and high-purity CSC copper. The decrease of corrosion was observed in a humid air test presumably due to the formation of a protective passive film. In conclusion, the results of this study indicate that CSC application of copper could be a useful option for fabricating a copper HLW disposal canister.